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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H009LSSQ-13

Name: DMT10H009LSSQ-13
Brand: Diodes Incorporated
SKU: DMT10H009LSSQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H009LSSQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT10H009LSSQ-13.pdf

Description:: MOSFET BVDSS: 61V~100V SO-8 T&R

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Product details

Overview

DMT10H009LSSQ-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SO-8 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 13A continuous drain current at 25°C, 9mΩ R_DS(ON) @ V_GS = 10V, and supports high-frequency switching in DC-DC converters and synchronous rectifiers.

For engineers reviewing the DMT10H009LSSQ-13 datasheet, DMT10H009LSSQ-13 pinout, DMT10H009LSSQ-13 application, or DMT10H009LSSQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 100% UIS-tested robustness, low 4.5V R_DS(ON) of 13.8mΩ, thermal resistance of 50°C/W (with copper plate), and SO-8 footprint compatibility with automotive-grade layout requirements.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low conduction loss and fast switching in hard-switched and synchronous rectification topologies. Its gate threshold voltage (1.3–2.5V) enables reliable turn-on with standard 3.3V/5V logic drivers, while low C_iss (2309pF) and Q_g (40.2nC @ 10V) support efficient high-frequency operation up to 1MHz.

The device integrates a robust body diode with t_RR = 44.3ns and Q_RR = 65.5nC, enabling stable reverse recovery in buck and LLC resonant converters. Its 66mJ E_AS rating and 21A I_AS ensure survivability under unclamped inductive switching stress common in automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Supports 48V automotive bus systems with ≥2× safety margin against transients.
R_DS(ON)	9mΩ @ V_GS = 10V - Enables <1.3W conduction loss at 13A, critical for thermally constrained modules.
I_D (max)	13A @ T_A = 25°C - Sustains peak load currents in 12V/24V/48V DC-DC output stages without derating.
C_iss	2309pF @ V_DS = 50V - Reduces gate drive power and improves switching efficiency above 300kHz.
E_AS	66mJ - Guarantees single-pulse avalanche ruggedness in motor driver freewheeling and boost converter inductors.
T_J range	−55°C to +150°C - Meets extended temperature requirements for under-hood automotive electronics.
Q_g	40.2nC @ V_GS = 10V - Enables fast turn-on with ≤1Ω gate resistor, minimizing switching transition losses.

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin, lead-free matte tin finish, JEDEC MS-012AC compliant; moisture sensitivity level 1).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20V V_GS; requires <2Ω series resistance to damp ringing during 10ns-scale transitions.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground plane in half-bridge layouts.
3 (D)	Drain	Main power path; connected to high-side switch node or inductor output; shares thermal pad with pins 4–8.
4 (D)	Drain	Parallel drain connection; reduces package inductance and current density in high-current paths (>10A).
5 (D)	Drain	Third drain terminal; enhances thermal dissipation via internal copper clip to exposed pad.
6 (D)	Drain	Fourth drain terminal; lowers R_DS(ON) by distributing current across four parallel bond wires.
7 (S)	Source	Secondary source connection; improves Kelvin sensing accuracy and reduces common-source inductance.
8 (S)	Source	Third source terminal; provides redundant return path for body diode conduction and gate drive return.

Key Features

Feature	Design Value
100% UIS tested in production	Every unit validated for 66mJ avalanche energy-eliminates field failure risk in inductive load switching.
AEC-Q101 qualified & PPAP capable	Validated per automotive stress test standards (HTOL, TC, HAST); full documentation available for Tier-1 audits.
Low R_DS(ON) @ 4.5V	13.8mΩ enables direct drive from 5V microcontrollers or PWM controllers without level-shifting circuitry.
Green, halogen-free package	UL 94V-0 molding compound with <900ppm Br/Cl and <1000ppm Sb-complies with automotive OEM environmental mandates.
Thermal resistance R_θJC	4°C/W - Enables >30W power handling when mounted on 1-inch² copper pad, reducing heatsink dependency.

Applications

Automotive DC-DC Converters

Synchronous Rectification

Use Scenario: 48V-to-12V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer; operates at 250–500kHz with precise dead-time control.

Use Value: 9mΩ R_DS(ON) cuts conduction loss by 35% vs. legacy 15mΩ MOSFETs, improving system efficiency from 92% to 94.5% at 10A load.

Use Scenario: Secondary-side rectifier in isolated 1kW server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal with 50ns propagation delay.

Use Value: Body diode t_RR = 44.3ns and Q_RR = 65.5nC minimize voltage overshoot and cross-conduction loss during zero-voltage switching transitions.

On-Board Charger (OBC) PFC Stage

Electric Power Steering (EPS) Motor Driver

Use Scenario: Boost switch in 6.6kW OBC interleaved PFC front-end operating at 100kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 20A peak current; gate driven by dedicated high-speed driver IC.

Use Value: C_iss = 2309pF and Q_g = 40.2nC allow clean 10ns rise/fall times with 1Ω gate resistor, reducing EMI filter size by 25%.

Use Scenario: Half-bridge low-side switch in 3-phase EPS inverter driving 400W brushless motor.

IC Role / Device Role / Timing Role: Low-side switching element conducting 15A RMS; synchronized with high-side to prevent shoot-through.

Use Value: −55°C to +150°C operating range ensures reliability during engine-off hot soak and cold cranking at −40°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN10LX	R_DS(ON) = 11.5mΩ @ 10V; lower Q_g (32nC); no AEC-Q101 certification on standard grade.	Requires requalification for automotive use; suitable for industrial DC-DC where PPAP not mandated.	Select if gate drive power budget is tighter and automotive qualification is not required.
IXTP10N100D2	TO-220 package; higher R_DS(ON) (120mΩ); 100V rating; not AEC-Q101 qualified.	Limited to non-automotive, lower-frequency (<100kHz) applications due to larger package inductance.	Choose only for prototyping or cost-sensitive non-automotive designs needing through-hole mounting.

Compared with STL10DN10LX and IXTP10N100D2, DMT10H009LSSQ-13 uniquely combines AEC-Q101 qualification, SO-8 surface-mount compatibility, sub-10mΩ R_DS(ON), and production-tested avalanche ruggedness-making it the only drop-in solution for production automotive power stages requiring zero requalification.

Availability

DMT10H009LSSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, synchronous rectifiers, and on-board chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing aligned with IATF 16949 processes.

Supply support for DMT10H009LSSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability 12V/48V vehicle subsystems including ADAS power supplies, EPS inverters, and battery management interfaces.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMT10H009LSSQ-13 supports 10A continuous drain current at T_A = +70°C with standard PCB layout (2oz copper, minimum pad). This derating reflects thermal limits imposed by R_θJA = 68°C/W; using a 1-inch² copper plate increases the rating to 38A at same temperature.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is characterized with t_RR = 44.3ns and Q_RR = 65.5nC at I_F = 20A and di/dt = 100A/μs. These values enable clean commutation in 300–500kHz synchronous rectifiers without external snubbers or negative gate drive.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 1–3Ω is recommended to damp high-frequency oscillation caused by L_GS/C_iss resonance. The device's low R_g (1.9Ω) and fast t_r/t_f (10.6ns/14.9ns) make it susceptible to ringing without proper gate network design.

How does the 100% UIS test impact field reliability?

Each unit undergoes production-level unclamped inductive switching at I_AS = 21A and E_AS = 66mJ. This screen eliminates latent defects that cause early-life failure under real-world inductive load transients-reducing infant mortality in automotive power stages by >99.5%.

DMT10H009LSSQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2309 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT10H009LSSQ-13 FAQ

1.How can I place an order for DMT10H009LSSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H009LSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H009LSSQ-13 reliable?

The price and inventory of DMT10H009LSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009LSSQ-13 is usually 5 days.

3.What payment methods are accepted for DMT10H009LSSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009LSSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H009LSSQ-13?

DMT10H009LSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H009LSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H009LSSQ-13?

For technical support, including DMT10H009LSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009LSSQ-13 requirements.

6.How does Aetrix verify that DMT10H009LSSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H009LSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009LSSQ-13 meets industry standards.

7.What is the process for return or replacement of DMT10H009LSSQ-13?

All DMT10H009LSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009LSSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H009LSSQ-13 part is unused and in its original packaging.

Return procedure for DMT10H009LSSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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