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Diodes Incorporated DMT10H009SCG-13
- Part No.:
- DMT10H009SCG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT10H009SCG-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V V-DFN3333
- Quantity:
- Payment:
- Shipping:
Inventory:4,992
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Product details
Overview
DMT10H009SCG-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, rated for 48A continuous drain current at TC = +25°C, with RDS(ON) = 7.5 mΩ (typ) @ VGS = 10V. It delivers low conduction loss and fast switching for high-efficiency notebook battery power management and load-switch applications.
For engineers reviewing the DMT10H009SCG-13 datasheet, DMT10H009SCG-13 pinout, DMT10H009SCG-13 application, or DMT10H009SCG-13 equivalent, key selection criteria include its 9.5 mΩ max RDS(ON), 2085 pF input capacitance, 30 nC total gate charge, 100V VDSS, and thermal resistance of 3.7 °C/W (junction-to-case).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving robust switching performance. Its 100% production-tested UIS capability ensures reliability under inductive switching stress, and its low Ciss/Crss ratio supports clean turn-on/turn-off waveforms in high-frequency DC-DC converters.
The device features a Kelvin-source–enabled layout within the V-DFN3333-8 (Type B) package, with four drain terminals and dual source pads to minimize parasitic inductance and improve current sharing. Gate threshold voltage is tightly distributed between 2 V and 4 V, enabling stable operation with standard 3.3 V or 5 V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V system rails and buck converter primary-side switches. |
| RDS(ON) max | 9.5 mΩ @ VGS = 10 V - Enables ≤0.5 W conduction loss at 23 A, critical for thermally constrained notebook battery FETs. |
| ID continuous | 48 A @ TC = +25°C - Supports high-current load switching without external heatsinking when mounted on ≥1-inch² copper. |
| Qg | 30 nC - Determines gate drive energy requirement; enables efficient 500 kHz–1 MHz switching with moderate gate driver strength. |
| Ciss | 2085 pF @ VDS = 50 V - Impacts Miller effect and switching speed; low relative to RDS(ON) ratio improves efficiency trade-off. |
| tF | 17.3 ns - Fast fall time reduces switching transition losses, especially beneficial in synchronous rectifier and OR-ing applications. |
| RθJC | 3.7 °C/W - Enables precise junction temperature estimation during transient load conditions using case temperature measurement. |
Pinout & Package
Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm, exposed drain pad, RoHS-compliant NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Primary current return path; dual S pads provide low-inductance connection and thermal spreading to PCB ground plane. |
| 2 (G) | Gate | Control terminal; low 1.7 Ω gate resistance minimizes ringing and simplifies driver design. |
| 3 (D) | Drain | Main power output node; four D terminals connect to large exposed drain pad for optimal thermal and current handling. |
| 4 (S) | Source | Secondary source connection; used with Pin 1 to reduce source inductance in high-di/dt switching. |
| 5 (D) | Drain | Additional drain terminal; shares current with other D pins to lower effective RDS(ON) and thermal resistance. |
| 6 (D) | Drain | Third drain terminal; enhances current distribution across the exposed pad and improves solder joint reliability. |
| 7 (D) | Drain | Fourth drain terminal; completes symmetric drain layout for balanced thermal dissipation and EMI reduction. |
| 8 (G) | Gate | Second gate connection; provides redundancy and lowers gate loop inductance for improved switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche ruggedness up to 27 A / 109.4 mJ without derating, eliminating need for external snubbers in inductive load switching. |
| Low RDS(ON) × Qg figure-of-merit | 285 Ω·nC - Balances conduction and switching losses for high-efficiency operation in portable power systems. |
| V-DFN3333-8 (Type B) package | Enables <0.5 mm profile and >2× thermal performance vs. SO-8, supporting ultra-thin notebook and tablet PCB stack-ups. |
| Halogen- and antimony-free "Green" construction | Meets automotive and industrial environmental mandates (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb), with UL 94V-0 flammability rating. |
| Fast body diode recovery | tRR = 45 ns - Reduces reverse recovery loss in synchronous buck topologies and enables efficient OR-ing in dual-battery systems. |
Applications
| Notebook Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Bidirectional overvoltage/overcurrent protection between two Li-ion battery packs in premium ultrabooks. IC Role / Device Role / Timing Role: Primary high-side load switch controlling main battery discharge path; operates in linear mode during fault limiting and saturated switch mode during normal operation. Use Value: 9.5 mΩ RDS(ON) limits voltage drop to <230 mV at 24 A, preserving system runtime; 100V rating accommodates full battery stack transients. |
Use Scenario: Hot-swap enable/disable of 20 V/5 A USB-C PD power path in docking stations. IC Role / Device Role / Timing Role: Low-loss, fast-turning load switch placed between PD controller and downstream power rail; driven by logic-level enable signal. Use Value: 30 nC Qg allows full turn-on in <1 µs with 30 mA gate driver; low Coss prevents output voltage droop during insertion events. |
| High-Efficiency Notebook DC-DC Converter | Industrial 48 V Input Buck Regulator |
|
Use Scenario: High-side FET in 1.2 V/30 A multiphase CPU core supply operating at 1 MHz. IC Role / Device Role / Timing Role: Synchronous rectifier switch; commutates with complementary low-side FET under PWM control with dead-time management. Use Value: 2085 pF Ciss and 13 pF Crss yield low Miller plateau, enabling sharp edge transitions and reduced shoot-through risk at high frequency. |
Use Scenario: Primary-side switch in isolated 48 V to 12 V industrial buck converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive 100 V drain spikes and 15 A RMS currents; requires avalanche-rated ruggedness. Use Value: 27 A IAS rating and 109.4 mJ EAS ensure reliable operation under line surge and inductive kickback without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H009LPS-13 | Same die, but in PSOF-8 package (leadless SO-8); RθJA = 50 °C/W vs. 46 °C/W for DMT10H009SCG-13; no exposed drain pad. | Less effective thermal performance in high-power density layouts; better suited for legacy SO-8 footprints than space-constrained DFN designs. | Select when board rework compatibility with SO-8 is required and thermal margin exceeds 5°C/W. |
| DMTH10H009LPS-13 | AEC-Q101 qualified version; identical RDS(ON), Qg, and package, but includes automotive-grade screening, PPAP support, and IATF 16949 manufacturing traceability. | Required for automotive infotainment power supplies or ADAS domain controllers where qualification compliance is mandatory. | Select only when AEC-Q101 certification, change control, and PPAP documentation are contractually required. |
Compared with DMT10H009LPS-13, the DMT10H009SCG-13 offers superior thermal resistance and smaller footprint, while DMT10H009SCG-13 and DMTH10H009LPS-13 share electrical specs but differ in qualification scope-making the latter essential only for automotive production programs.
Availability
DMT10H009SCG-13 is available at Aetrix Electronics and suitable for notebook battery management, USB-C PD load switching, and high-frequency DC-DC converter applications requiring stable component supply, consistent parametric performance, and long-term lifecycle continuity.
Supply support for DMT10H009SCG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
DMT10H009SCG-13 belongs to Diodes' DMTx series of low-RDS(ON) TrenchMOS devices, engineered specifically for high-efficiency, space-constrained portable power systems demanding minimal conduction loss and fast switching.
FAQ
What is the maximum safe operating junction temperature for DMT10H009SCG-13?
The absolute maximum junction temperature is +150°C per the datasheet. Operation above this limit risks permanent degradation of the silicon die and bond wires. Thermal design must ensure TJ remains ≤150°C under worst-case ambient, power dissipation, and PCB copper conditions-verified using RθJC = 3.7 °C/W and measured case temperature.
Can DMT10H009SCG-13 be driven directly by a 3.3 V microcontroller GPIO?
No. Its gate threshold voltage range is 2–4 V, and RDS(ON) is specified at VGS = 10 V. At 3.3 V, the device operates in weak inversion with RDS(ON) >100 mΩ, causing excessive heating. A dedicated gate driver or level-shifting circuit is required to deliver ≥10 V to fully enhance the channel.
Does DMT10H009SCG-13 have integrated ESD protection on the gate?
Yes. The device includes on-chip gate oxide protection structures rated to ±100 nA gate leakage at ±20 V, meeting HBM ESD Class 1B (≥2 kV). However, it is not rated for CDM or MM ESD events, so external handling precautions and board-level TVS remain necessary during assembly and field operation.
Is the V-DFN3333-8 (Type B) package compatible with standard reflow profiles for lead-free soldering?
Yes. The package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C for ≤30 seconds. Recommended profile follows IPC/JEDEC J-STD-020D, with ramp-up ≤3°C/s, preheat 150–200°C for 60–120 s, and time above liquidus (217°C) of 60–90 s.
DMT10H009SCG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2085 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3333-8 (Type B)
DMT10H009SCG-13 FAQ
1.How can I place an order for DMT10H009SCG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H009SCG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H009SCG-13 reliable?
The price and inventory of DMT10H009SCG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009SCG-13 is usually 5 days.
3.What payment methods are accepted for DMT10H009SCG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009SCG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H009SCG-13?
DMT10H009SCG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H009SCG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H009SCG-13?
For technical support, including DMT10H009SCG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009SCG-13 requirements.
6.How does Aetrix verify that DMT10H009SCG-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H009SCG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009SCG-13 meets industry standards.
7.What is the process for return or replacement of DMT10H009SCG-13?
All DMT10H009SCG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009SCG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H009SCG-13 part is unused and in its original packaging.
Return procedure for DMT10H009SCG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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