Diodes Incorporated DMT10H009SCG-7

Overview

DMT10H009SCG-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, rated for 48A continuous drain current at T_C = +25°C, with R_DS(ON) = 9.5 mΩ @ V_GS = 10V and 100% production-tested UIS capability. It serves as a high-efficiency load switch in notebook battery power management systems.

For engineers reviewing the DMT10H009SCG-7 datasheet, DMT10H009SCG-7 pinout, DMT10H009SCG-7 application, or DMT10H009SCG-7 equivalent, key selection criteria include its low R_DS(ON), fast switching (t_F = 17.3 ns), thermal resistance R_θJC = 3.7 °C/W, and AEC-Q101 readiness for automotive-grade power switching.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low conduction loss and high-speed switching. Its 100V BVDSS rating supports wide-input DC-DC converters, while the 2085 pF C_iss and 13 pF Crss enable precise gate drive timing control in synchronous buck topologies.

The device integrates a robust body diode with 45 ns reverse recovery time and 68 nC Q_RR, supporting high-frequency discontinuous conduction mode (DCM) operation. Thermal design is facilitated by direct die-to-case thermal path via exposed copper pad and R_θJC = 3.7 °C/W.

Key Specifications

Pinout & Package

V-DFN3333-8 (Type B) package with 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, and exposed thermal pad on bottom side for enhanced heat dissipation. Molded green compound meets UL 94V-0 and RoHS 3/REACH requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH10H009LPS-13 and IPB180N10N3 G, DMT10H009SCG-7 uniquely balances ultra-low R_DS(ON), compact 3.3×3.3 mm footprint, and sub-30 nC gate charge-making it optimal for portable, high-density, and high-frequency load switching where thermal and layout constraints dominate.

Availability

DMT10H009SCG-7 is available at Aetrix Electronics and suitable for notebook battery management, USB-C power delivery e-fuse, and 48V telecom DC-DC input stages requiring stable component supply and full traceability.

Supply support for DMT10H009SCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power switching in portable computing, industrial power supplies, and automotive body electronics.

FAQ

What is the maximum gate-source voltage rating for DMT10H009SCG-7?

The absolute maximum V_GS is ±20 V, per the datasheet's Maximum Ratings table. Operation beyond ±12 V is not recommended for long-term reliability, and gate drive circuits must include clamping (e.g., Zener diode) to prevent overshoot during fast switching. The gate threshold voltage V_GS(TH) ranges from 2 V to 4 V, ensuring robust turn-on at 4.5 V logic levels.

Does DMT10H009SCG-7 require a gate resistor for stability?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by gate loop inductance and the device's 1.7 Ω intrinsic R_g. Without it, parasitic oscillation can exceed V_GS ratings or cause shoot-through in half-bridge configurations. Layout best practices include minimizing gate trace length and using a dedicated ground return path.

Can DMT10H009SCG-7 be used in automotive applications?

Yes - Diodes Incorporated confirms this part is AEC-Q101 qualified and manufactured in IATF 16949-certified facilities. It meets automotive requirements for temperature cycling (-55°C to +150°C), humidity testing, and mechanical shock. For PPAP submission, contact Diodes' automotive team directly with your part number and application details.

How does the V-DFN3333-8 (Type B) package affect thermal performance?

The V-DFN3333-8 (Type B) uses an exposed thermal pad soldered to a large PCB copper area, achieving R_θJC = 3.7 °C/W. When mounted on 1-inch² 2 oz copper, R_θJA drops to 46 °C/W - enabling 2.7 W continuous power dissipation. Poor pad layout (e.g., insufficient thermal vias or small copper area) degrades this to 99 °C/W, limiting usable current to ~11 A.