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Diodes Incorporated DMT10H009SK3-13

Part No.:
DMT10H009SK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMT10H009SK3-13.pdf
Description:
MOSFET BVDSS: 61V~100V TO252 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,638

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Product details

Overview

DMT10H009SK3-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 91A continuous drain current at TC = +25°C, with RDS(ON) of 9.1mΩ @ VGS = 10V and low gate charge (Qg = 34nC). It delivers high-efficiency power switching in DC-DC converters and LED backlighting systems.

For engineers reviewing the DMT10H009SK3-13 datasheet, DMT10H009SK3-13 pinout, DMT10H009SK3-13 application, or DMT10H009SK3-13 equivalent, key selection criteria include its 100V VDSS rating, 9.1mΩ on-resistance, 34nC total gate charge, 1.1°C/W junction-to-case thermal resistance, and TO252 package suitability for high-current surface-mount power stages.

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction and switching losses in synchronous buck and half-bridge topologies. Its 100% unclamped inductive switching (UIS) rating of 181mJ ensures robustness under transient overloads in power supply designs.

The device features a fast body diode with tRR = 47ns and QRR = 72nC, enabling efficient operation in hard-switched converters. Gate threshold voltage (2–4V) supports standard 10V gate drive while maintaining noise immunity in noisy industrial environments.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - Supports input rails up to 80V DC-DC converters with margin
RDS(ON) Max9.1mΩ @ VGS = 10V - Enables <1W conduction loss at 30A in PCB-mounted applications
ID Continuous91A @ TC = +25°C - Requires heatsink or copper pour for sustained high-current operation
Qg Total34nC - Reduces gate driver power demand and enables >500kHz switching
RθJC1.1°C/W - Allows direct thermal path to heatsink via exposed drain pad
EAS181mJ - Withstands single-pulse inductive energy without failure in UPS or motor drives
VSD Max1.3V @ IS = 20A - Limits reverse recovery loss during freewheeling in synchronous rectification

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Molded plastic case (UL 94V-0), lead-free, halogen-free, RoHS 3 compliant.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <3.4Ω series resistance for EMI control
Pin 3 (Drain)Power output / high-side connectionExposed metal pad - must be soldered to large copper area for thermal and current handling

Key Features

FeatureDesign Value
100% UIS rated181mJ avalanche energy - eliminates need for external snubbers in inductive load switching
Low Qg34nC - reduces gate driver stress and enables high-frequency PWM without excessive heat
Low RDS(ON)9.1mΩ - cuts I²R losses by >30% vs. comparable 100V MOSFETs in 48V telecom supplies
Thermally optimized packageRθJC = 1.1°C/W - enables 75A derated current at TC = +70°C with minimal heatsinking
Green constructionHalogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets automotive and industrial environmental mandates

Applications

Telecom DC-DC Power SuppliesIndustrial Motor Drive Half-Bridge

Use Scenario: High-density 48V-to-12V intermediate bus converter in 1RU server PSUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck regulator.

Use Value: 9.1mΩ RDS(ON) and 34nC Qg enable >95% efficiency at 20A per phase with minimal thermal rise.

Use Scenario: Low-voltage (24–48V) BLDC motor inverter stage for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving 3-phase gate drivers.

Use Value: 181mJ EAS withstands commutation spikes; TO252 thermal pad simplifies heatsinking on compact PCBs.

LED Backlighting for Medical DisplaysAutomotive Body Control Module (BCM) Power Switching

Use Scenario: Constant-current LED string driver for diagnostic imaging displays requiring flicker-free dimming.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating current through boost-fed LED strings.

Use Value: Fast 47ns tRR and low QRR minimize switching distortion during 1–10kHz dimming cycles.

Use Scenario: Load switch for 12V accessory circuits (e.g., HVAC fans, window lifts) in AEC-Q101-qualified BCMs.

IC Role / Device Role / Timing Role: Protected high-current power FET with integrated body diode for inductive load management.

Use Value: 91A ID rating and 100% UIS ensure reliable operation across temperature (-40°C to +125°C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTP110N10TRDS(ON) = 10.5mΩ @ VGS = 10V; TO220 package; higher RθJA (62°C/W)Requires through-hole mounting and larger heatsink; less suitable for space-constrained SMT designsPrefer when legacy TO220 footprint or higher single-pulse surge tolerance is required
STL110N10F7RDS(ON) = 8.5mΩ @ VGS = 10V; PowerFLAT 5x6 package; RθJC = 1.5°C/WLower thermal performance than TO252; no exposed drain pad for direct heatsinkingChoose only if board layout mandates 5x6mm footprint and thermal budget allows 0.4°C/W penalty

Compared with IXTP110N10T and STL110N10F7, DMT10H009SK3-13 offers superior thermal coupling (1.1°C/W RθJC) and optimal balance of low RDS(ON), low Qg, and industry-standard TO252 manufacturability - making it preferred for high-power density SMT power stages.

Availability

DMT10H009SK3-13 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor drives, and LED backlighting systems requiring stable component supply and long-term production continuity.

Supply support for DMT10H009SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and automotive applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum safe operating junction temperature for DMT10H009SK3-13?

The absolute maximum junction temperature is +150°C, and the device is characterized across -55°C to +150°C. Derating begins at TJ > 125°C per Figure 7; sustained operation above 135°C requires active cooling or current reduction to maintain reliability.

Does DMT10H009SK3-13 meet AEC-Q101 requirements for automotive use?

While DMT10H009SK3-13 is manufactured in IATF 16949-certified facilities and supports automotive-grade change control, it is not formally qualified to AEC-Q101. For certified automotive applications, Diodes recommends contacting their automotive team for PPAP-capable alternatives like the DMT10H009SK3-AQ variant.

Can DMT10H009SK3-13 be used in synchronous rectification topologies?

Yes - its low VSD (1.3V max), fast tRR (47ns), and low QRR (72nC) make it suitable for synchronous rectification in buck and flyback converters. However, body diode conduction should be minimized via precise gate timing to avoid reverse recovery losses.

What is the recommended PCB pad layout for optimal thermal performance?

Per Diodes' suggested layout (DS42154, page 6), use a minimum 4.57mm × 1.06mm copper pad for Pin 3 (Drain), extended to ≥10mm² total area with thermal vias to inner-layer planes. Maintain ≥0.5mm clearance from adjacent traces and avoid solder mask over the drain pad.

DMT10H009SK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
91A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2028 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

DMT10H009SK3-13 FAQ

1.How can I place an order for DMT10H009SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H009SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H009SK3-13 reliable?

The price and inventory of DMT10H009SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009SK3-13 is usually 5 days.

3.What payment methods are accepted for DMT10H009SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H009SK3-13?

DMT10H009SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H009SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H009SK3-13?

For technical support, including DMT10H009SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009SK3-13 requirements.

6.How does Aetrix verify that DMT10H009SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H009SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009SK3-13 meets industry standards.

7.What is the process for return or replacement of DMT10H009SK3-13?

All DMT10H009SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H009SK3-13 part is unused and in its original packaging.

Return procedure for DMT10H009SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT10H009SK3-13 Tags

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