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Diodes Incorporated DMT10H009SSS-13
- Part No.:
- DMT10H009SSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
DMT10H009SSS-13.pdf
- Description:
- MOSFET BVDSS: 61V-100V SO-8 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:3,903
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Product details
Overview
DMT10H009SSS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SO-8 package, rated for 12A continuous drain current at 25°C, with 9.2mΩ RDS(ON) at VGS = 10V and 100% production-tested UIS capability. It serves as a primary switching element in high-frequency synchronous rectification stages of isolated DC-DC converters.
For engineers reviewing the DMT10H009SSS datasheet, DMT10H009SSS pinout, DMT10H009SSS application, or DMT10H009SSS equivalent, key selection criteria include its low RDS(ON), fast switching (tF = 17.4ns), robust avalanche energy rating (EAS = 109.4mJ), and SO-8 thermal performance (RθJC = 5°C/W).
Technical Context
This MOSFET employs planar trench-gate technology to achieve simultaneous low on-resistance and controlled gate charge (Qg = 29.8nC). Its body diode exhibits low reverse recovery charge (QRR = 68nC) and fast tRR = 45ns, enabling efficient hard-switched and synchronous rectifier operation.
The device is characterized for stable operation across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 10V and ID = 10A. Gate threshold voltage remains tightly bounded (2–4V) and shows minimal drift with temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Withstands up to 100V drain-source blocking voltage in off-state, suitable for 48V-input DC-DC topologies with margin. |
| RDS(ON) | 7.5–9.2mΩ @ VGS = 10V - Enables <1.2W conduction loss at 12A, critical for high-efficiency power stages. |
| Qg | 29.8nC - Determines gate drive power requirement and switching transition time under 6Ω gate resistance. |
| EAS | 109.4mJ - Quantifies single-pulse avalanche ruggedness; supports reliable operation during inductive turn-off transients. |
| RθJC | 5°C/W - Enables direct heatsinking via exposed drain pads; allows >30W dissipation with 150°C max TJ and 25°C case temp. |
| tF | 17.4ns - Limits turn-off switching loss in 500kHz+ applications when paired with appropriate gate driver. |
Pinout & Package
Package: SO-8 surface-mount, with exposed drain paddle thermally connected to pins 1, 4, 5, and 8. Molded green compound, matte tin-plated copper leadframe, JEDEC-standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4, 5, 8 | Drain (D) | High-current output node; electrically and thermally tied to exposed pad; requires minimum 1-inch² copper pour for 2.1W operation. |
| 2 | Gate (G) | Control input; 20V absolute max rating; 1.7Ω gate resistance limits ringing and simplifies driver design. |
| 3 | Source (S) | Reference node for gate drive; connects to power ground plane; body diode anode is internally tied here. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche survival under worst-case inductive switching events without derating. |
| Low Qgd/Qg ratio (24.5%) | Reduces Miller-induced switching delay and improves controllability during hard commutation. |
| Halogen- and antimony-free "Green" construction | Meets <900ppm Br/Cl (<1500ppm total) and <1000ppm Sb; compliant with RoHS 3 and automotive change-control requirements. |
| Fast body diode (tRR = 45ns) | Minimizes reverse recovery loss in synchronous rectifier configurations, especially at light loads. |
Applications
| Server VRM Power Stage | Industrial 48V DC-DC Converter |
|---|---|
Use Scenario: High-density 12V-to-1V point-of-load conversion in AI accelerator server racks requiring >95% efficiency at 100A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 600kHz with adaptive dead-time control. Use Value: 9.2mΩ RDS(ON) reduces conduction loss by 38% versus 15mΩ alternatives, directly improving full-load efficiency by 0.8%. |
Use Scenario: Isolated 48V-to-12V flyback converter in factory automation PLC power supplies with 200ms hold-up time requirement. IC Role / Device Role / Timing Role: Primary-side switching FET handling 10A peak current with 100V VDSS margin against reflected transients. Use Value: 109.4mJ EAS withstands 400V ring-ups from transformer leakage inductance without failure. |
| Automotive ADAS Camera Module PSU | Telecom Base Station DC-DC |
Use Scenario: Compact 12V-to-3.3V buck converter powering image sensor and ISP in rear-view camera modules with AEC-Q101 qualification path. IC Role / Device Role / Timing Role: High-side main switch in integrated power module with internal bootstrap gate drive. Use Value: SO-8 thermal resistance (RθJA = 61°C/W with 1″² copper) enables 1.4W dissipation within 85°C ambient without forced air. |
Use Scenario: 54V-to-12V intermediate bus converter in 5G macro base station RF power supply delivering 30A continuous output. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology operating at 200kHz. Use Value: 68nC QRR and 45ns tRR reduce body diode conduction loss by 65% compared to standard FRFETs, lowering thermal stress on heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H009LPS-13 | Same die in PowerSO-8 package; RθJC = 2.5°C/W (vs. 5°C/W); higher cost; no SO-8 footprint compatibility. | Preferred where board space is constrained but thermal budget demands <10°C/W junction-to-case path. | Select only if thermal interface to heatsink is superior and PCB layout cannot accommodate SO-8 thermal pad area. |
| IPB080N10N5ATMA1 | 100V, 8mΩ, 120A pulsed; TO-263 package; Qg = 44nC; no UIS rating published; RoHS 2 only. | Suitable for high-current, low-frequency motor drives-not optimized for high-frequency DC-DC switching loss. | Choose only for non-switching or <100kHz applications where lower RDS(ON) outweighs gate drive complexity and missing UIS validation. |
Compared with DMTH10H009LPS-13 and IPB080N10N5ATMA1, DMT10H009SSS uniquely balances SO-8 manufacturability, production-validated avalanche ruggedness, and optimized Qg/RDS(ON) trade-off for 200–1000kHz DC-DC converters-making it the default choice for space-constrained, high-reliability power stages.
Availability
DMT10H009SSS is available at Aetrix Electronics and suitable for server VRM power stages, industrial 48V DC-DC converters, and automotive ADAS camera module PSUs requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.
Supply support for DMT10H009SSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' Precision Power™ series, engineered specifically for high-efficiency, high-reliability power conversion in computing, industrial, and automotive systems where thermal performance and ruggedness are design-critical.
FAQ
What is the maximum continuous drain current at 70°C ambient?
At TA = +70°C with standard FR-4 PCB (2oz copper, minimum pad layout), the continuous drain current is 10A. This derating reflects thermal limits imposed by RθJA = 89°C/W and 1.4W power dissipation ceiling under those conditions.
Does DMT10H009SSS support gate drive at 5V logic levels?
No. The gate threshold voltage ranges from 2V to 4V, but RDS(ON) is only guaranteed at VGS = 10V (7.5–9.2mΩ). At 5V, typical RDS(ON) exceeds 25mΩ-unsuitable for high-current switching. A 10V gate drive is required for specified performance.
Is the body diode suitable for asynchronous rectification?
Yes-the body diode is characterized with VSD = 1.2V at IS = 20A and tRR = 45ns. However, its QRR = 68nC makes it less efficient than external Schottky diodes in high-frequency (>300kHz) asynchronous designs; synchronous use is strongly preferred.
What is the moisture sensitivity level (MSL) and reflow profile compliance?
DMT10H009SSS is rated MSL Level 3 per J-STD-020, requiring floor life of 168 hours at ≤30°C/60% RH before reflow. It is qualified for standard Pb-free reflow profiles with peak temperature ≤260°C and time above 217°C ≤60 seconds.
DMT10H009SSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2085 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DMT10H009SSS-13 FAQ
1.How can I place an order for DMT10H009SSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H009SSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H009SSS-13 reliable?
The price and inventory of DMT10H009SSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009SSS-13 is usually 5 days.
3.What payment methods are accepted for DMT10H009SSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009SSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H009SSS-13?
DMT10H009SSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H009SSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H009SSS-13?
For technical support, including DMT10H009SSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009SSS-13 requirements.
6.How does Aetrix verify that DMT10H009SSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H009SSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009SSS-13 meets industry standards.
7.What is the process for return or replacement of DMT10H009SSS-13?
All DMT10H009SSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009SSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H009SSS-13 part is unused and in its original packaging.
Return procedure for DMT10H009SSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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