Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H010LCT

Name: DMT10H010LCT
Brand: Diodes Incorporated
SKU: DMT10H010LCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMT10H010LCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMT10H010LCT.pdf

Description:: MOSFET N-CH 100V 98A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:23

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMT10H010LCT from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in TO220AB package, rated for 98A continuous drain current at T_C = +25°C, with R_DS(ON) = 6.9 mΩ (typ) at V_GS = 10V. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters, motor control stages, and backlight inverters.

For engineers reviewing the DMT10H010LCT datasheet, DMT10H010LCT pinout, DMT10H010LCT application, or DMT10H010LCT equivalent, key selection criteria include its 100V BVDSS rating, 9.5mΩ max RDS(ON) at 10V drive, 100% production-tested UIS robustness, TO220AB thermal performance (R_θJC = 0.9°C/W), and automotive-grade qualification readiness via Q-suffix variants.

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage, high-current switching with minimized gate charge (Q_G = 58.4 nC) and low output capacitance (C_oss = 764 pF). Its threshold voltage range (1.4–3.0 V) ensures stable turn-on under industrial temperature extremes (–55°C to +150°C).

The device integrates a robust body diode with V_SD = 0.8 V (typ) at I_S = 13A and t_RR = 49.8 ns, enabling efficient synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100 V - Withstands up to 100V drain-source blocking voltage before avalanche onset, suitable for 48V bus and 100V input DC-DC stages.
RDS(ON) @ VGS=10V	6.9 mΩ (typ) - Enables <1W conduction loss at 13A, critical for thermally constrained power stages.
ID (Continuous)	98 A @ TC=25°C - Supports high-current motor phase legs and primary-side switches without forced cooling.
QG	58.4 nC - Low gate charge reduces driver power demand and switching transition time in 100–500 kHz converters.
RθJC	0.9 °C/W - Enables >100W dissipation with modest heatsinking; junction-to-case path dominates thermal design.
EAS	15 mJ - Confirmed unclamped inductive switching energy rating ensures reliability in inductive load switching.
VGS(TH)	1.4–3.0 V - Gate threshold compatible with standard 3.3V/5V logic-level drivers and microcontroller GPIOs.

Pinout & Package

TO220AB through-hole package with isolated tab (drain-connected), standard 3-pin layout, UL 94V-0 molded plastic case, matte tin-plated leads, and 2.24 g mass. Designed for PCB mounting with minimum pad area per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Provides low-inductance, high-current path to heatsink; requires electrical isolation when mounted to chassis.
Source	Reference node for gate drive and current return path	Defines ground reference for gate control; carries full load current back to source rail or ground plane.
Gate	Control electrode for channel modulation	High-impedance input requiring <60 nC charge for full enhancement; sensitive to ESD and ringing without proper RC snubbing.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees 15 mJ avalanche energy handling across all units, eliminating need for derating in inductive switching.
Low Ciss (4166 pF)	Reduces Miller effect and gate drive losses, supporting clean turn-on in high-frequency SMPS designs.
Lead-free, halogen-free, RoHS 3 compliant	Meets global environmental compliance (Br+Cl <1500 ppm, Sb <1000 ppm), qualified for automotive PPAP-ready supply chains.
JEDEC-qualified reliability	Validated per AEC-Q stress test standards for high-reliability industrial and automotive applications.
Fast reverse recovery (tRR = 49.8 ns)	Minimizes diode conduction loss and EMI during freewheeling, enabling higher frequency operation without snubber networks.

Applications

Brushless DC Motor Drive

LED Backlight Inverter

Use Scenario: High-side switch in 3-phase BLDC gate driver stage powering HVAC blowers or industrial pumps.

IC Role / Device Role / Timing Role: Power switch controlling phase current flow; operates in PWM mode at 20–30 kHz with synchronous rectification.

Use Value: 98A ID rating and 6.9mΩ RDS(ON) minimize I²R heating and enable compact heatsink design in space-constrained enclosures.

Use Scenario: Primary-side switch in resonant half-bridge inverter driving CCFL or high-brightness LED strings in medical displays.

IC Role / Device Role / Timing Role: Fast-switching power transistor in ZVS topology; handles repetitive 100V drain spikes and 13A peak currents.

Use Value: Low Crss (44 pF) and 58.4 nC QG ensure precise timing control and minimal dead-time loss in high-frequency resonant operation.

Industrial DC-DC Converter

Automotive Body Control Module

Use Scenario: Primary switch in 100V-input, 12V-output isolated flyback converter for factory automation PLC power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 10V gate drive; subjected to 100V transient surges on input rail.

Use Value: 100V BVDSS and 15 mJ EAS provide margin against line transients and ensure long-term reliability without clamping circuits.

Use Scenario: Load switch for headlight dimming or seat heater control in BCM modules meeting AEC-Q101 requirements.

IC Role / Device Role / Timing Role: High-side power switch controlled by CAN-linked MCU; cycles at <1 Hz with surge-rated duty.

Use Value: Qualified JEDEC reliability and RoHS/halogen-free construction support automotive change control and IATF 16949 traceability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	100V, 100A, RDS(ON) = 7.5 mΩ @ 10V; higher QG (72 nC); TO220FP package (isolated flange)	Higher gate drive requirement; better suited for lower-frequency, high-current linear regulation	Select when flange isolation is mandatory and switching frequency ≤50 kHz.
IRF540N	100V, 33A, RDS(ON) = 44 mΩ @ 10V; lower ID rating; legacy planar process; no UIS testing	Limited to <30A continuous loads; unsuitable for high-reliability inductive switching	Only consider for cost-sensitive, non-critical 24V systems with ample thermal margin.

Compared with STP100N10F7 and IRF540N, DMT10H010LCT offers superior conduction efficiency (6.9 vs. 7.5/44 mΩ), verified avalanche ruggedness (15 mJ), and tighter thermal resistance (0.9°C/W), making it optimal for high-power-density, high-reliability 100V switching where gate drive efficiency and transient robustness are critical.

Availability

DMT10H010LCT is available at Aetrix Electronics and suitable for motor control, LED backlighting, and industrial DC-DC converters requiring stable component supply, automotive-qualified sourcing pathways, and long-lifecycle availability.

Supply support for DMT10H010LCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for high-efficiency, high-reliability switching in industrial power supplies, motor drives, and automotive subsystems.

FAQ

What is the maximum safe operating temperature for DMT10H010LCT?

The device supports junction temperatures from –55°C to +150°C. Maximum continuous operation occurs at T_J = +150°C, validated by SOA curves and transient thermal resistance data (r(t) × R_θJC). Derating is required above T_C = +100°C, where I_D drops to 62A. Thermal design must maintain T_J ≤ 150°C under worst-case pulse conditions.

Is DMT10H010LCT suitable for use with 5V logic-level gate drivers?

No - while V_GS(TH) starts at 1.4V, full enhancement requires ≥10V for R_DS(ON) ≤9.5mΩ. At V_GS = 5V, R_DS(ON) rises to 10–20mΩ (max), increasing conduction loss significantly. A dedicated gate driver (e.g., TC4427) or level-shifter is required for reliable 5V MCU control.

Does DMT10H010LCT have an integrated body diode, and what are its characteristics?

Yes - it features a monolithic body diode with V_SD = 0.8V (typ) at I_S = 13A and t_RR = 49.8ns. The diode is rated for 90A continuous forward current (I_S) and exhibits low Q_RR (85.1nC), enabling efficient freewheeling in buck, flyback, and half-bridge topologies without external diode addition.

Can DMT10H010LCT be used in automotive applications?

Yes - the base part meets JEDEC high-reliability standards and is designed for automotive qualification. Diodes Incorporated offers Q-suffix variants (e.g., DMT10H010LCTQ) fully qualified to AEC-Q101, manufactured in IATF 16949 facilities, and PPAP-capable. Use the Q-part for production automotive ECUs and body control modules.

DMT10H010LCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 139W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMT10H010LCT FAQ

1.How can I place an order for DMT10H010LCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H010LCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H010LCT reliable?

The price and inventory of DMT10H010LCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H010LCT is usually 5 days.

3.What payment methods are accepted for DMT10H010LCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H010LCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H010LCT?

DMT10H010LCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H010LCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H010LCT?

For technical support, including DMT10H010LCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H010LCT requirements.

6.How does Aetrix verify that DMT10H010LCT is sourced from the original manufacturer or authorized distributors?

All DMT10H010LCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H010LCT meets industry standards.

7.What is the process for return or replacement of DMT10H010LCT?

All DMT10H010LCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H010LCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H010LCT part is unused and in its original packaging.

Return procedure for DMT10H010LCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…