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Diodes Incorporated DMT10H010LPS-13

Part No.:
DMT10H010LPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMT10H010LPS-13.pdf
Description:
MOSFET N-CH 100V 9.4A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,454

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Product details

Overview

DMT10H010LPS-13 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in PowerDI5060-8 package, delivering 8.3mΩ RDS(ON) at VGS = 10V, 98A continuous drain current at TC = +25°C, and fast switching with 58.4nC total gate charge - optimized for notebook battery power management and high-efficiency load switching.

For engineers reviewing the DMT10H010LPS-13 datasheet, DMT10H010LPS-13 pinout, DMT10H010LPS-13 application, or DMT10H010LPS-13 equivalent, key selection criteria include low on-resistance under 4.5V gate drive, thermal resistance of 0.9°C/W (junction-to-case), SOA compliance up to 100µs pulses, and RoHS-compliant green packaging suitable for thin-profile portable electronics.

Technical Context

This MOSFET employs planar trench-gate silicon technology to balance conduction loss and switching speed, supporting high-frequency DC-DC conversion with Ciss = 4166pF and tF = 22ns. Its body diode exhibits QRR = 85.1nC and tRR = 49.8ns, enabling efficient synchronous rectification in buck converters.

The device operates across –55°C to +150°C junction temperature range and is rated for 150mJ avalanche energy (EAS) with IAS = 10A, ensuring robustness against inductive switching transients in motor control and power management circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - supports input rails up to 80V DC-DC stages with 20% margin
RDS(ON)8.3mΩ @ VGS = 10V - enables <1W conduction loss at 98A, critical for high-current load switches
ID (continuous)98A @ TC = +25°C - requires exposed drain pad soldering to PCB copper for thermal dissipation
Qg58.4nC - determines gate driver strength requirement for <100ns switching transitions
RθJC0.9°C/W - allows >130W power handling with minimal junction-to-case temperature rise
tRR49.8ns - limits reverse recovery losses in synchronous buck topologies operating above 300kHz
EAS150mJ - sustains single-pulse inductive energy without failure in motor drive H-bridge freewheeling

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced surface-mount package with exposed drain pad (8-terminal configuration), 1.0mm max height, UL 94V-0 molded compound, and matte tin–annealed copper leadframe.

Pin/TerminalCircuit RoleDesign Meaning
S (Source)Power return path for channel currentInternally connected to 4 pins (S1–S4) for low-inductance source routing and thermal spreading
D (Drain)Main current-carrying terminal (high-side or low-side)Exposed metal pad (pins D1–D4) serves as primary thermal interface and high-current path
G (Gate)Control electrode for channel modulationSingle-pin input with 2Ω gate resistance; requires <12V drive for full enhancement

Key Features

FeatureDesign Value
Low RDS(ON) at 4.5V12mΩ - enables operation from 5V logic-level gate drivers without level-shifting
Thermal efficiencyRθJC = 0.9°C/W - reduces heatsink dependency in space-constrained notebook battery packs
Fast switchingtF = 22ns - minimizes overlap loss in high-frequency (>500kHz) synchronous converters
Green packagingHalogen- and antimony-free, RoHS 3 compliant - meets IPC-1752A material declaration requirements
SOA robustness100µs pulse rating at 100V/98A - supports surge-tolerant load switch sequencing in USB-C PD applications

Applications

Battery Protection CircuitNotebook Load Switch

Use Scenario: Bidirectional overvoltage/overcurrent protection in dual-cell Li-ion battery packs with integrated fuel gauge.

IC Role / Device Role / Timing Role: Low-side main switch controlling battery discharge path; activated during fault detection by protection IC.

Use Value: 8.3mΩ RDS(ON) limits voltage drop to <800mV at 95A, preserving battery runtime and thermal headroom.

Use Scenario: System power rail enable/disable for CPU/GPU VRMs during sleep/wake transitions.

IC Role / Device Role / Timing Role: High-current load switch placed between battery and system power domain; controlled by PMIC GPIO.

Use Value: 58.4nC Qg enables clean 100µs turn-on/off timing with standard 1A gate drivers, preventing brownout during state changes.

DC-DC Synchronous RectifierBrushless DC Motor Driver

Use Scenario: Secondary-side synchronous rectification in 48V-to-12V isolated buck converter for laptop docking stations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary output.

Use Value: 49.8ns tRR and 85.1nC QRR reduce switching loss by >35% vs. 40V Schottky in 300kHz operation.

Use Scenario: Half-bridge low-side switch in 24V BLDC fan controller for thermal management subsystems.

IC Role / Device Role / Timing Role: PWM-controlled power stage switch; commutated at 20kHz with dead-time control.

Use Value: 150mJ EAS withstands inductive kickback during rapid PWM edge transitions without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMTH10H010LPS-13Same die, PowerDI5060-8/SWP (Type UX) variant with modified leadframe geometryIdentical electrical specs; optimized for automated optical inspection (AOI) due to enhanced marking contrastSelect for high-volume SMT lines requiring improved post-reflow verification
IPB100N10N3 G100V, 100A, 7.5mΩ RDS(ON), TO-263 package, higher Qg (95nC)Larger footprint and higher thermal mass; suited for industrial DC-DC where board space is less constrainedChoose when higher peak current margin and legacy TO-263 compatibility outweigh thin-profile needs

Compared with DMTH10H010LPS-13, the SWP variant offers identical performance with AOI-friendly marking; versus IPB100N10N3G, DMT10H010LPS-13 trades 1.2mΩ higher RDS(ON) for 40% lower profile and 39% lower Qg, favoring portable power efficiency and layout density.

Availability

DMT10H010LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, DC-DC converter secondary-side switching, and BLDC motor control requiring stable component supply, JEDEC-qualified reliability, and RoHS 3 compliance.

Supply support for DMT10H010LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in portable computing and battery-powered systems where thermal and space constraints dominate design decisions.

FAQ

What is the maximum safe operating temperature for DMT10H010LPS-13?

The device supports junction temperatures from –55°C to +150°C. For reliable long-term operation, maintain TJ ≤ 135°C under steady-state conditions using the 0.9°C/W RθJC value and verified PCB copper area per Diodes' suggested pad layout. Derating is required above 100°C ambient.

Does DMT10H010LPS-13 require a gate resistor for stability?

Yes - a 6Ω gate resistor is specified in the datasheet for switching characterization (tD(ON), tR). For production designs, use 2–10Ω depending on driver capability and EMI requirements; values below 2Ω risk ringing and overshoot due to 2Ω intrinsic gate resistance and 4166pF Ciss.

Can DMT10H010LPS-13 be used in automotive applications?

No - this part is not AEC-Q101 qualified. Diodes offers automotive-grade equivalents (e.g., DMT10H010LPSQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. Use only the Q-suffix version for automotive powertrain or body electronics.

How does the PowerDI5060-8 package improve thermal performance over SO-8?

PowerDI5060-8 uses an exposed drain pad soldered directly to PCB copper, achieving RθJC = 0.9°C/W - 5× better than SO-8's typical 4.5°C/W. This allows 98A continuous current without external heatsinks, whereas SO-8 variants of similar RDS(ON) are limited to ~35A at TC = +25°C.

DMT10H010LPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
71 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta), 139W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMT10H010LPS-13 FAQ

1.How can I place an order for DMT10H010LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H010LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H010LPS-13 reliable?

The price and inventory of DMT10H010LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H010LPS-13 is usually 5 days.

3.What payment methods are accepted for DMT10H010LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H010LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H010LPS-13?

DMT10H010LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H010LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H010LPS-13?

For technical support, including DMT10H010LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H010LPS-13 requirements.

6.How does Aetrix verify that DMT10H010LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H010LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H010LPS-13 meets industry standards.

7.What is the process for return or replacement of DMT10H010LPS-13?

All DMT10H010LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H010LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H010LPS-13 part is unused and in its original packaging.

Return procedure for DMT10H010LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT10H010LPS-13 Tags

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