Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H010LSSQ-13

Name: DMT10H010LSSQ-13
Brand: Diodes Incorporated
SKU: DMT10H010LSSQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMT10H010LSSQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT10H010LSSQ-13.pdf

Description:: MOSFET BVDSS: 61V~100V SO-8 T&R

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,698

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMT10H010LSSQ-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET qualified to AEC-Q101, with R_DS(ON) = 9.5 mΩ @ V_GS = 10 V, I_D = 12 A (T_A = +25°C), and SO-8 package. It serves as a high-efficiency power switch in automotive DC-DC converters and backlighting circuits.

For engineers reviewing the DMT10H010LSSQ-13 datasheet, DMT10H010LSSQ-13 pinout, DMT10H010LSSQ-13 application, or DMT10H010LSSQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at 4.5 V gate drive, 100% UIS-tested robustness, and SO-8 thermal performance under automotive ambient conditions.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in 12 V–48 V automotive power rails. Its gate threshold voltage (1.4–2.8 V) enables compatibility with standard 3.3 V/5 V logic-level controllers, while its C_iss = 4166 pF and Q_g = 58.4 nC support efficient PWM operation up to several hundred kHz.

The device integrates a robust body diode with V_SD = 0.8–1.3 V (I_S = 13 A) and t_RR = 49.8 ns, enabling synchronous rectification and flyback recovery in buck and boost topologies. Thermal resistance R_θJC = 3.6 °C/W confirms suitability for PCB-mounted heatsinking in space-constrained modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands transient surges up to 100 V in 12 V/24 V automotive systems without breakdown.
R_DS(ON) @ 10 V	9.5 mΩ - Delivers ≤1.5 W conduction loss at 12 A, critical for thermally constrained DC-DC stages.
I_D (T_A = 25°C)	12 A - Supports continuous load current in mid-power automotive subsystems (e.g., LED drivers, ECU power rails).
Q_g	58.4 nC - Enables predictable gate drive power and timing control in 200–500 kHz switching applications.
E_AS	15 mJ - Rated avalanche energy ensures survivability during inductive turn-off events in motor or solenoid drives.
R_θJC	3.6 °C/W - Allows direct thermal coupling to copper pour or heatsink for junction temperature management below 150°C.
t_RR	49.8 ns - Minimizes reverse recovery loss and EMI in hard-switched topologies with freewheeling paths.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, 4.9 mm × 6.0 mm footprint, 1.45 mm height), RoHS-compliant green molding compound, matte tin-plated leads.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 0–20 V gate-source bias; requires <58.4 nC charge for full enhancement.
2 (S)	Source	Reference node for gate drive and current return path; tied to PCB ground plane for thermal and EMI control.
3 (D)	Drain	Main power output terminal; electrically and thermally connected to internal die backside via exposed pad (pins 4–5–6–7–8).
4–5–6–7–8	Drain (common)	Five parallel drain terminals forming a single thermal and electrical connection point to PCB copper area for heat dissipation.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees ruggedness against unclamped inductive spikes without derating, eliminating need for external snubbers in solenoid/motor drive designs.
Low R_DS(ON) @ 4.5 V	14.5 mΩ enables direct drive from 5 V microcontrollers or PMICs without level-shifting, reducing BOM count in compact ECUs.
AEC-Q101 qualified + PPAP capable	Validated for automotive use per stress test requirements (HTOL, TC, HAST), supporting Tier-1 supplier documentation and change control.
Green, halogen-free construction	Meets JESD22-A112 (MSL Level 1), RoHS 3, and automotive OEM environmental mandates without compromising thermal or electrical performance.

Applications

Automotive LED Backlighting

12 V Automotive DC-DC Converter

Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays with PWM dimming.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling LED current path with 200–1000 Hz PWM frequency.

Use Value: 9.5 mΩ R_DS(ON) limits I²R loss to <1.4 W at 12 A, enabling >92% efficiency and eliminating active cooling in sealed enclosures.

Use Scenario: Synchronous rectifier in 12 V input, 3.3 V/5 V output buck converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 500 kHz with gate drive synchronized to high-side controller.

Use Value: 49.8 ns t_RR and 14.2 nC Q_gd minimize shoot-through risk and switching loss, improving light-load efficiency by ≥3% vs. Schottky alternatives.

Automotive Power Management Unit (PMU)

Engine Control Unit (ECU) Load Switch

Use Scenario: Distributed 12 V rail switching across multiple sub-systems (e.g., HVAC, infotainment, telematics) within a central PMU.

IC Role / Device Role / Timing Role: Protected load switch with integrated overcurrent and thermal foldback, controlled via CAN/LIN interface.

Use Value: 15 mJ E_AS withstands inrush and short-circuit transients during hot-plug events, reducing need for external fuses or poly-switches.

Use Scenario: Isolating 12 V sensor supply rails (e.g., oxygen sensors, knock sensors) with fault reporting.

IC Role / Device Role / Timing Role: High-reliability power switch with diagnostic feedback via sense-FET or external resistor network.

Use Value: AEC-Q101 qualification and -55°C to +150°C operating range ensure stable operation across engine bay thermal cycles without parameter drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN10LX	R_DS(ON) = 10.5 mΩ @ 10 V; SO-8; AEC-Q101 qualified; no UIS rating published.	Lacks production UIS testing; lower I_D (10 A) limits peak current handling in pulse-loaded loads.	Prefer DMT10H010LSSQ-13 where inductive load robustness is mandatory (e.g., fuel injector drivers).
IXTP10N10P	TO-220 package; R_DS(ON) = 100 mΩ @ 10 V; non-automotive grade; higher thermal resistance.	Through-hole mounting only; unsuitable for automated SMT assembly or space-constrained automotive modules.	Select DMT10H010LSSQ-13 for surface-mount, high-density, and automotive-compliant designs requiring SO-8 footprint.

Compared with STL10DN10LX and IXTP10N10P, DMT10H010LSSQ-13 uniquely combines AEC-Q101 qualification, 100% UIS validation, SO-8 thermal performance (R_θJC = 3.6 °C/W), and sub-10 mΩ R_DS(ON), making it optimal for safety-critical, high-reliability automotive power switching where layout density and surge immunity are co-constrained.

Availability

DMT10H010LSSQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, and ECU load switching requiring stable component supply across extended temperature and lifecycle demands.

Supply support for DMT10H010LSSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' AEC-Q101-qualified power transistor product line, engineered specifically for automotive power conversion, lighting, and load switching applications demanding robustness, low loss, and long-term supply stability.

FAQ

What is the maximum safe operating junction temperature for DMT10H010LSSQ-13?

The absolute maximum junction temperature is +150°C, validated per AEC-Q101 thermal cycling and HTOL tests. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating is required above +125°C ambient when dissipating >1.2 W, based on R_θJA = 47 °C/W with recommended PCB layout.

Does DMT10H010LSSQ-13 support logic-level gate drive?

Yes - its V_GS(TH) range (1.4–2.8 V) and R_DS(ON) = 14.5 mΩ @ V_GS = 4.5 V enable reliable enhancement with standard 3.3 V or 5 V microcontroller outputs. Full 12 A current capability requires ≥6 V gate drive to achieve ≤12 mΩ conduction resistance.

How is the SO-8 thermal pad configured in DMT10H010LSSQ-13?

Pins 4, 5, 6, 7, and 8 are internally shorted to the drain and form a unified thermal pad. This configuration must be soldered to a minimum 1-inch² copper pour on the PCB's bottom layer to achieve the rated R_θJA = 47 °C/W and sustain 2.7 W continuous power dissipation.

Is DMT10H010LSSQ-13 compliant with PPAP documentation requirements?

Yes - Diodes Incorporated provides full PPAP Level 3 documentation (including PSW, design records, process flow, PFMEA, control plan, and dimensional reports) for DMT10H010LSSQ-13 upon request, supporting Tier-1 automotive supplier compliance and audit readiness.

DMT10H010LSSQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4166 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT10H010LSSQ-13 FAQ

1.How can I place an order for DMT10H010LSSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H010LSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H010LSSQ-13 reliable?

The price and inventory of DMT10H010LSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H010LSSQ-13 is usually 5 days.

3.What payment methods are accepted for DMT10H010LSSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H010LSSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H010LSSQ-13?

DMT10H010LSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H010LSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H010LSSQ-13?

For technical support, including DMT10H010LSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H010LSSQ-13 requirements.

6.How does Aetrix verify that DMT10H010LSSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H010LSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H010LSSQ-13 meets industry standards.

7.What is the process for return or replacement of DMT10H010LSSQ-13?

All DMT10H010LSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H010LSSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H010LSSQ-13 part is unused and in its original packaging.

Return procedure for DMT10H010LSSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…