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Diodes Incorporated DMT10H010SPS-13
- Part No.:
- DMT10H010SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT10H010SPS-13.pdf
- Description:
- MOSFET N-CH 100V PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:1,884
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Product details
Overview
DMT10H010SPS-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-current load switching and DC-DC conversion. It delivers 8.8 mΩ RDS(ON) at VGS = 10 V, supports 100 A continuous drain current at TC = +25°C, and features 100% unclamped inductive switching (UIS) rating of 93.7 mJ - enabling robust operation in notebook battery management systems.
For engineers reviewing the DMT10H010SPS-13 datasheet, DMT10H010SPS-13 pinout, DMT10H010SPS-13 application, or DMT10H010SPS-13 equivalent, key selection criteria include its low on-resistance at 6 V gate drive (11.5 mΩ), fast switching times (tD(ON) = 18.6 ns), thermal resistance RθJC = 0.9 °C/W, and compliance with RoHS, halogen-free, and antimony-free "Green" standards.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast turn-on/turn-off dynamics and strong UIS ruggedness. Its gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers, and its QG = 56.4 nC enables efficient gate driving in high-frequency power stages.
The device integrates an intrinsic body diode with VSD = 0.8–1.3 V at IS = 13 A and tRR = 54.5 ns, supporting synchronous rectification and freewheeling in buck converters and motor H-bridge circuits without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V industrial bus and 60 V automotive subsystems. |
| RDS(ON) | 8.8 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 100 A, critical for high-efficiency power delivery in compact PCB layouts. |
| ID (continuous) | 100 A @ TC = +25°C - Supports high-current load switching in battery protection ICs and e-fuse applications with minimal heatsinking. |
| EAS | 93.7 mJ @ L = 0.3 mH - Guarantees reliable operation under inductive load transients without avalanche failure in motor control and DC-DC output stages. |
| QG | 56.4 nC - Determines gate driver power requirement; enables 500 kHz+ switching with moderate gate drive strength (e.g., TC4427 or UCC27531). |
| RθJC | 0.9 °C/W - Allows direct thermal coupling to copper pour or heatsink, delivering >130 W power dissipation capability when mounted on exposed pad. |
| tRR | 54.5 ns - Limits reverse recovery losses during hard-switched freewheeling, improving efficiency over Schottky alternatives in cost-sensitive designs. |
Pinout & Package
Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2–5 and 7–10 are drain-connected), single gate (pin 6), and triple source terminals (pins 1, 11, 12). Molded green compound meets UL 94V-0 and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1, 11, 12 | Source (S) | Three independent source connections reduce bond wire inductance and improve current sharing in high-di/dt switching. |
| Pin 2–5, 7–10 | Drain (D) | Eight parallel drain terminals tied to large exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Pin 6 | Gate (G) | Single gate input with RG = 0.91 Ω - enables precise gate timing control and minimizes ringing in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS rated | 93.7 mJ avalanche energy - eliminates need for external snubbers in inductive load switching, reducing BOM count and layout area. |
| Low RDS(ON) at 6 V drive | 11.5 mΩ - supports direct interface with 3.3 V microcontrollers and PMICs without level-shifting, simplifying gate drive design. |
| Fast switching speed | tD(ON) = 18.6 ns, tF = 29.5 ns - enables high-frequency (>1 MHz) operation in GaN-complementary topologies and compact DC-DC modules. |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant - satisfies environmental compliance requirements for EU, China RoHS, and automotive Tier-1 supply chains. |
| Thermal performance | RθJC = 0.9 °C/W - allows full 100 A current handling with junction temperature maintained below 150°C using only 1 oz copper thermal pad. |
Applications
| High-Efficiency Notebook Battery Switch | 48 V Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Bidirectional main battery switch in ultrabook platforms, managing charge/discharge paths between adapter, battery, and system rail. IC Role / Device Role / Timing Role: High-side load switch controlling 20 V–20.5 V system bus with fast fault response and overcurrent protection. Use Value: 8.8 mΩ RDS(ON) limits voltage drop to <210 mV at 24 A peak, preserving battery runtime and enabling accurate fuel-gauge reporting. |
Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V flyback converter for factory automation I/O modules. IC Role / Device Role / Timing Role: Secondary-side power MOSFET replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 54.5 ns reverse recovery time and 0.8 V forward drop minimize switching losses, raising full-load efficiency from 89% to 93.2%. |
| Brushless DC Motor Gate Driver | Industrial E-Fuse Protection |
|
Use Scenario: Low-side switch in three-phase BLDC inverter for HVAC fan control, operating at 20 kHz PWM with 100 A phase current. IC Role / Device Role / Timing Role: Phase-leg switching element with integrated body diode conducting freewheeling current during dead-time. Use Value: 100% UIS rating ensures survival during motor stall events and back-EMF spikes without external clamping components. |
Use Scenario: Solid-state replacement for mechanical fuse in programmable logic controller (PLC) power distribution module. IC Role / Device Role / Timing Role: Current-limiting switch with fast overcurrent detection and controlled turn-off to prevent board damage during short-circuit faults. Use Value: 250 A pulsed drain current and 0.9 °C/W thermal resistance allow sustained 80 A trip current with <50 µs response latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H010LPS-13 | Same die, PowerDI3333 package (smaller footprint, lower thermal mass); RDS(ON) = 9.5 mΩ @ 10 V; RθJC = 1.4 °C/W. | Better suited for space-constrained portable devices where 70 A continuous current suffices and thermal margin is less critical. | Select when board area is constrained and peak power dissipation remains below 90 W. |
| IPB100N10N3 G | 100 V, 100 A TO-263 package; RDS(ON) = 7.2 mΩ @ 10 V; higher QG = 95 nC; no UIS rating specified. | Requires larger PCB real estate and stronger gate driver; lacks guaranteed avalanche ruggedness for inductive loads. | Choose only if lowest possible conduction loss is prioritized and inductive stress is absent or externally clamped. |
Compared with DMTH10H010LPS-13, DMT10H010SPS-13 offers superior thermal performance and higher current capability due to its larger PowerDI5060-8 package; versus IPB100N10N3 G, it trades minor RDS(ON) increase for guaranteed UIS, smaller footprint, and lower gate drive demand - making it optimal for compact, rugged, medium-power industrial switching.
Availability
DMT10H010SPS-13 is available at Aetrix Electronics and suitable for notebook battery management, 48 V DC-DC conversion, and industrial e-fuse protection requiring stable component supply across multi-year production cycles.
Supply support for DMT10H010SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, low-loss switching in space- and thermally-constrained applications such as portable computing, industrial power supplies, and motor control systems.
FAQ
What is the maximum safe operating junction temperature for DMT10H010SPS-13?
The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating curves in Figure 5 and Figure 7 confirm RDS(ON) remains within specification up to 150°C, provided thermal design maintains TJ ≤ 150°C under worst-case ambient and power conditions.
Can DMT10H010SPS-13 be used with 3.3 V logic-level gate drive?
Yes - its VGS(TH) range is 2–4 V, and RDS(ON) is characterized at 6 V gate drive (11.5 mΩ max). At 3.3 V, typical RDS(ON) rises to ~22 mΩ (per transfer curve extrapolation in Figure 2), limiting usable current to ~45 A for <1 W loss. For full 100 A capability, 10 V drive is required.
Does DMT10H010SPS-13 have an integrated ESD protection diode on the gate?
No - the datasheet does not specify gate ESD protection. The gate oxide is rated for ±20 V VGSS, but transient ESD events exceeding human-body model (HBM) 2 kV may cause damage. External gate protection (e.g., 12 V Zener clamp to source) is recommended in automated assembly or field-replaceable modules.
Is the PowerDI5060-8 package lead-free and RoHS compliant?
Yes - the terminal finish is matte tin annealed over copper lead-frame, fully compliant with EU RoHS 2015/863/EU (RoHS 3), and certified halogen- and antimony-free per Diodes' "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb). UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity further validate its suitability for lead-free reflow processes.
DMT10H010SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.7A (Ta), 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4468 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT10H010SPS-13 FAQ
1.How can I place an order for DMT10H010SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H010SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H010SPS-13 reliable?
The price and inventory of DMT10H010SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H010SPS-13 is usually 5 days.
3.What payment methods are accepted for DMT10H010SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H010SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H010SPS-13?
DMT10H010SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H010SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H010SPS-13?
For technical support, including DMT10H010SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H010SPS-13 requirements.
6.How does Aetrix verify that DMT10H010SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H010SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H010SPS-13 meets industry standards.
7.What is the process for return or replacement of DMT10H010SPS-13?
All DMT10H010SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H010SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H010SPS-13 part is unused and in its original packaging.
Return procedure for DMT10H010SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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