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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H015LCG-13

Name: DMT10H015LCG-13
Brand: Diodes Incorporated
SKU: DMT10H015LCG-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H015LCG-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT10H015LCG-13.pdf

Description:: MOSFET N-CH 100V 9.4A/34A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT10H015LCG-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in a V-DFN3333-8 (Type B) package, optimized for low R_DS(ON) (15 mΩ @ V_GS = 10 V) and fast switching in high-efficiency load switch and notebook battery power management circuits. It supports 34 A continuous drain current at T_C = +25°C and features 100% production-tested UIS capability.

For engineers reviewing the DMT10H015LCG-13 datasheet, DMT10H015LCG-13 pinout, DMT10H015LCG-13 application, or DMT10H015LCG-13 equivalent, key selection criteria include its 15 mΩ on-resistance at 10 V gate drive, 33.3 nC total gate charge, 1871 pF input capacitance, thermal resistance of 4.5 °C/W junction-to-case, and suitability for compact DC-DC converter and backlighting power stages.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low conduction loss while maintaining robust switching performance. Its 100 V V_DSS, ±20 V V_GSS, and 1.4–3.5 V gate threshold voltage enable reliable operation across industrial temperature ranges (−55°C to +150°C).

The device integrates a low-forward-voltage body diode (V_SD = 0.9–1.3 V @ I_S = 20 A), supports pulsed drain currents up to 54 A, and delivers 85 mJ avalanche energy (L = 3 mH), making it suitable for inductive load switching with inherent ruggedness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage without breakdown
R_DS(ON)	15 mΩ @ V_GS = 10 V - Minimizes conduction loss in high-current load switches
I_D (continuous)	34 A @ T_C = +25°C - Supports high-power battery-side switching in portable systems
Q_g	33.3 nC - Enables efficient gate driving with moderate-speed controllers
C_iss	1871 pF - Defines input impedance and impacts gate drive loop stability
R_θJC	4.5 °C/W - Enables effective heat transfer to PCB copper when mounted per recommended pad layout
E_AS	85 mJ - Confirmed avalanche energy rating ensures reliability under inductive turn-off stress

Pinout & Package

Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm, exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to high-side load or power rail; electrically tied to exposed thermal pad for thermal and electrical conduction
Source (S)	Current return path and reference node	Common connection point for gate drive reference and load return; multiple pins (S1–S4) reduce source inductance
Gate (G)	Control electrode	Single-pin control input; requires stable ≥4.5 V drive for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
100% UIS tested	Guarantees ruggedness against unclamped inductive switching events in real-world load-switch applications
Low R_DS(ON) @ 4.5 V	26 mΩ enables logic-level gate drive compatibility with 5 V microcontrollers and PMICs
Green packaging	Halogen- and antimony-free compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets strict environmental compliance
Thermal resistance	R_θJC = 4.5 °C/W allows >2 W dissipation with minimal junction-to-board temperature rise

Applications

Backlight Power Switch

Notebook Battery Protection

Use Scenario: Controls LED string current in ultrathin notebook displays using PWM dimming.

IC Role / Device Role / Timing Role: High-side load switch managing 12–24 V backlight rails with fast turn-on/turn-off timing.

Use Value: Low 15 mΩ R_DS(ON) minimizes voltage drop and thermal rise during sustained 2–3 A LED current delivery.

Use Scenario: Isolates main battery pack from system bus during overcurrent or short-circuit fault conditions.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch activated by battery management IC during protection events.

Use Value: 85 mJ E_AS and 100% UIS testing ensure safe interruption of 10–20 A fault currents without device failure.

DC-DC Converter High-Side Switch

USB-C Power Delivery Load Switch

Use Scenario: Synchronous rectifier or high-side switch in 12 V → 5 V buck converters for peripheral power rails.

IC Role / Device Role / Timing Role: Main power FET operating at 300–500 kHz with low Q_g/C_iss ratio for efficiency optimization.

Use Value: 33.3 nC Q_g and 1871 pF C_iss support clean switching edges and reduced gate driver power loss.

Use Scenario: Enables/disables 20 V/5 A USB-C PD power path between adapter and host system.

IC Role / Device Role / Timing Role: Controlled hot-swap switch with soft-start and overtemperature shutdown coordination.

Use Value: −55°C to +150°C operating range and 100 V rating accommodate wide-input PD adapters and transient surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT10H015LCTQ-13	Same die, identical R_DS(ON) and Q_g, but in V-DFN3333-8 (Type A) package with different thermal pad geometry	Type A has larger thermal pad exposure; slightly better R_θJA on optimized boards	Select if board layout uses Type A footprint and requires marginally improved thermal performance
DMTH10H015LCTQ-13	Enhanced version with tighter R_DS(ON) distribution (12.1–15 mΩ typ/max vs. 15–19.5 mΩ) and lower Q_gd (4.2 nC)	Better EMI profile and higher efficiency in high-frequency switching; same pinout and footprint	Prefer for new designs targeting <500 kHz DC-DC converters where gate charge optimization is critical

Compared with DMT10H015LCG-13, DMT10H015LCTQ-13 offers identical electrical specs but alternate mechanical mounting, while DMTH10H015LCTQ-13 improves switching efficiency via lower Q_gd and tighter R_DS(ON) tolerance-both remain drop-in compatible in V-DFN3333-8 layouts.

Availability

DMT10H015LCG-13 is available at Aetrix Electronics and suitable for notebook battery protection, USB-C power delivery load switching, and DC-DC converter high-side switching requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.

Supply support for DMT10H015LCG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, space-constrained load switching and DC-DC conversion in portable computing and USB power delivery systems.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMT10H015LCG-13 supports 21 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the V-DFN3333-8 package's 4.5 °C/W junction-to-case resistance and PCB thermal design. Operation above this current requires active cooling or reduced ambient conditions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by the 0.75 Ω intrinsic gate resistance and PCB trace inductance, especially in high-speed switching applications. While not mandatory for basic on/off control, omitting it may cause overshoot, shoot-through in half-bridges, or EMI issues above 100 kHz.

Is the exposed thermal pad electrically connected to any internal node?

Yes-the exposed thermal pad is internally connected to the Drain (D) terminal. It must be soldered to a large copper pour on the PCB for both thermal management and electrical continuity. Floating or grounded pads will compromise both thermal performance and device functionality.

Can this MOSFET be used in synchronous rectification applications?

No-this device is optimized as a high-side load switch or primary-side switch, not a synchronous rectifier. Its body diode forward voltage (0.9–1.3 V) and reverse recovery charge (51.9 nC) are higher than dedicated synchronous rectifiers, resulting in excessive conduction and switching losses in secondary-side rectification roles.

DMT10H015LCG-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1871 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: V-DFN3333-8

DMT10H015LCG-13 FAQ

1.How can I place an order for DMT10H015LCG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H015LCG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H015LCG-13 reliable?

The price and inventory of DMT10H015LCG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H015LCG-13 is usually 5 days.

3.What payment methods are accepted for DMT10H015LCG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H015LCG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H015LCG-13?

DMT10H015LCG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H015LCG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H015LCG-13?

For technical support, including DMT10H015LCG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H015LCG-13 requirements.

6.How does Aetrix verify that DMT10H015LCG-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H015LCG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H015LCG-13 meets industry standards.

7.What is the process for return or replacement of DMT10H015LCG-13?

All DMT10H015LCG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H015LCG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H015LCG-13 part is unused and in its original packaging.

Return procedure for DMT10H015LCG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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