Diodes Incorporated DMT10H015LCG-7

Overview

DMT10H015LCG-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, delivering 15 mΩ R_DS(ON) at V_GS = 10 V and 34 A continuous drain current at T_C = +25°C. It serves as a high-efficiency load switch or battery protection device in notebook power management systems, with low gate charge (33.3 nC) and fast switching (t_F = 8.1 ns).

For engineers reviewing the DMT10H015LCG-7 datasheet, DMT10H015LCG-7 pinout, DMT10H015LCG-7 application, or DMT10H015LCG-7 equivalent, key selection criteria include R_DS(ON) @ 4.5 V (26 mΩ), thermal resistance R_θJC = 4.5°C/W, UIS-rated ruggedness, and V-DFN3333-8 footprint compatibility for space-constrained DC-DC and backlighting designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while preserving fast turn-on/turn-off dynamics. Its 100% production-tested UIS capability (7.5 A, 85 mJ) ensures robustness against inductive transients in load-switch and battery-isolation circuits.

The device features low input capacitance (C_iss = 1871 pF) and minimal reverse transfer capacitance (C_rss = 6.9 pF), enabling stable gate drive with reduced Miller effect-critical for synchronous buck converters operating above 500 kHz.

Key Specifications

Pinout & Package

Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm, exposed drain pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMT10H015LCG-7, DMTH10H015LQ-7 trades thermal performance for ruggedness in larger packages, while SIS890DN-T1-GE3 reduces gate drive loss at the cost of higher conduction loss-making each optimal for distinct trade-offs in size, frequency, and current density.

Availability

DMT10H015LCG-7 is available at Aetrix Electronics and suitable for notebook battery management, LED backlight load switching, and DC-DC converter high-side switching requiring stable component supply and RoHS-compliant green packaging.

Supply support for DMT10H015LCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This part belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, space-constrained power management in portable computing and display systems-emphasizing low R_DS(ON), fast switching, and rugged transient handling.

FAQ

What is the maximum safe operating junction temperature for DMT10H015LCG-7?

The absolute maximum junction temperature is +150°C, and the device is characterized across –55°C to +150°C. Derating begins at T_J > 125°C per Figure 6, where R_DS(ON) increases ~1.8× from 25°C value. Thermal design must ensure T_J remains ≤140°C under worst-case ambient and power dissipation to maintain long-term reliability.

Can DMT10H015LCG-7 be used in a high-side configuration with 12 V gate drive?

Yes-its ±20 V gate-source rating supports 12 V drive, and V_GS(TH) (1.4–3.5 V) ensures full enhancement. However, high-side use requires a gate driver capable of level-shifting and supplying ≥33.3 nC per cycle. The low C_iss (1871 pF) reduces required drive current versus comparable 100 V MOSFETs.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed pad (pins 1–4 and 6–8 plus bottom thermal pad) is internally connected to the drain. It must be soldered to a dedicated PCB drain net and cannot serve as a floating thermal slug. Electrical isolation is only between gate and source/drain; no internal isolation exists between drain pad and drain leads.

Does DMT10H015LCG-7 support bidirectional current flow in USB-C applications?

It conducts unidirectionally from drain to source when V_GS > V_GS(TH), but its intrinsic body diode allows reverse current (source to drain) when V_SD > 0.9 V. For true bidirectional blocking, external control or complementary MOSFET pairing is required-this device alone does not provide active reverse-current protection.