Diodes Incorporated DMT10H015LFG-13

Overview

DMT10H015LFG from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, optimized for high-efficiency DC-DC converters and synchronous rectification. It delivers R_DS(ON) = 13.5 mΩ @ V_GS = 10V, 42A continuous drain current at T_C = +25°C, and features 100% UIS-rated avalanche ruggedness for robust power-stage operation in industrial and consumer power supplies.

For engineers reviewing the DMT10H015LFG datasheet, DMT10H015LFG pinout, DMT10H015LFG application, or DMT10H015LFG equivalent, this device is selected for low conduction loss, fast switching (Q_gd × R_DS(ON) FOM), thermally efficient layout in space-constrained designs, and compatibility with 4.5V–10V gate drive systems in buck converters and LED backlight drivers.

Technical Context

This MOSFET employs advanced trench-gate silicon technology to achieve low R_DS(ON) while maintaining controlled gate charge (Q_g = 33.3 nC) and low Crss (6.9 pF), enabling high-frequency operation up to 1 MHz in hard-switched topologies. Its 3.5°C/W R_θJC and exposed drain pad support direct thermal coupling to PCB copper.

The device operates across –55°C to +150°C junction temperature range, with V_GS(TH) tightly specified (1.4–3.5 V) and stable over temperature (±0.2 V variation from –55°C to +150°C). Body diode recovery (t_RR = 37.9 ns, Q_RR = 51.9 nC) supports efficient synchronous rectification without external Schottky replacement.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 4–8 tied internally to drain), footprint occupying only 33% board area of standard SO-8, UL 94V-0 molded green compound, matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT10H015LFG, DMTH10H015LPS-13 trades compactness for thermal headroom, while IPB100N10N3G sacrifices switching efficiency for raw current capacity-making the DMT10H015LFG optimal for space- and frequency-constrained power conversion where R_DS(ON), Q_gd, and t_RR jointly define system efficiency.

Availability

DMT10H015LFG is available at Aetrix Electronics and suitable for server point-of-load converters, LCD backlight inverters, and industrial PLC power supplies requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant green packaging.

Supply support for DMT10H015LFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and internal fabs.

This MOSFET belongs to Diodes' PowerDI® high-efficiency power-switching product line, engineered specifically for high-frequency DC-DC conversion, synchronous rectification, and compact power-management functions in consumer, industrial, and computing applications.

FAQ

Is DMT10H015LFG suitable for 5V gate drive applications?

Yes. The device specifies R_DS(ON) = 23.5 mΩ at V_GS = 4.5V and ID = 20A, with guaranteed V_GS(TH) down to 1.4V. This ensures reliable enhancement-mode turn-on using standard 5V logic or microcontroller outputs without level-shifting circuitry.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 26A per datasheet Note 6. The SOA curve (Figure 12) shows DC operation is limited by R_DS(ON) heating, permitting 26A only below V_DS ≈ 3.5V; above that, pulse-width and duty cycle must be constrained per the 10ms–100ms curves to avoid thermal runaway.

Does DMT10H015LFG have a fully characterized body diode for synchronous rectification?

Yes. The body diode forward voltage is specified as V_SD = 0.9–1.3V at I_S = 20A and V_GS = 0V, with reverse recovery time t_RR = 37.9 ns and Q_RR = 51.9 nC measured at di/dt = 100 A/µs. These parameters are production-tested and guaranteed across temperature.

Can DMT10H015LFG replace SO-8 MOSFETs in existing layouts without redesign?

No. Although both are 8-pin packages, PowerDI3333-8 has a unique 3.3 mm × 3.3 mm footprint with 0.65 mm pitch and integrated drain pad, differing significantly from SO-8's 5.0 mm × 6.2 mm outline and 1.27 mm pitch. Pad layout, stencil design, and thermal relief must be requalified per Diodes' suggested footprint (Document DS38222, Page 7).