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Diodes Incorporated DMT10H015LK3-13
- Part No.:
- DMT10H015LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT10H015LK3-13.pdf
- Description:
- MOSFET N-CHANNEL 100V 50A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:10,932
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Product details
Overview
DMT10H015LK3-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 15 mΩ RDS(ON) at VGS = 10 V and 52.7 A continuous drain current at TC = +25°C. It features low gate charge (QG = 33.3 nC), fast switching, and AEC-Q101 qualification for automotive-grade reliability in high-efficiency DC-DC converters.
For engineers reviewing the DMT10H015LK3-13 datasheet, DMT10H015LK3-13 pinout, DMT10H015LK3-13 application, or DMT10H015LK3-13 equivalent, key selection criteria include RDS(ON) vs. VGS curve, UIS ruggedness (7.5 A/85 mJ), thermal resistance (RθJC = 2°C/W), and TO252 layout compatibility with FR-4 PCBs using 2 oz copper.
Technical Context
This MOSFET employs planar silicon technology optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (1.4–3.5 V) enables robust drive compatibility with 3.3 V and 5 V logic, while the 6.9 pF reverse transfer capacitance (CRSS) supports stable operation in hard-switched topologies.
The device integrates a body diode with 1.3 V forward voltage at 20 A and 37.9 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge configurations without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset. |
| RDS(ON) | 15 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 20 A, critical for thermally constrained power stages. |
| ID (continuous) | 52.7 A @ TC = +25°C - Supports high-current output stages when mounted on adequate copper area. |
| QG | 33.3 nC - Determines gate driver power requirement and switching speed in PWM circuits. |
| EAS | 85 mJ - Quantifies single-pulse avalanche energy handling capability under unclamped inductive load conditions. |
| RθJC | 2°C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation. |
| VGS(TH) | 1.4–3.5 V - Ensures reliable turn-on with standard logic-level gate drivers and noise margin against false triggering. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, 3-terminal plastic case with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of N-channel MOSFET | Reference node for gate drive; connects to ground or low-side return path in buck/half-bridge topologies. |
| Pin 2 (Gate) | Control electrode | Receives gate drive signal; requires low-impedance path to minimize ringing and ensure fast tR/tF. |
| Pin 3 (Drain) | Drain terminal (exposed pad) | High-current output node; electrically and thermally connected to large copper pour for heat dissipation and low-inductance routing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 7.5 A/85 mJ avalanche capability per unit-no screening waivers or binning required. |
| Low QG (33.3 nC) | Reduces gate driver power consumption and enables higher PWM frequencies without excessive driver heating. |
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS power supplies per stress test requirements. |
| Green, halogen-free construction | Meets RoHS 3 (2015/863/EU) and JEDEC J-STD-020 Level 1 moisture sensitivity-no baking required pre-reflow. |
Applications
| Automotive DC-DC Converters | Laptop/Notebook VRMs |
|---|---|
Use Scenario: Step-down conversion from 12 V battery rail to 1.0–3.3 V core voltages in engine control units and infotainment systems. IC Role / Device Role / Timing Role: High-side or synchronous rectifier switch in multiphase buck converters operating at 300–1000 kHz. Use Value: 15 mΩ RDS(ON) minimizes I²R losses at 20–40 A loads, improving efficiency by ≥1.2% over comparable 20 mΩ devices. | Use Scenario: Core voltage regulation for Intel/AMD CPUs and GPUs in thin-and-light notebooks with strict thermal envelope limits. IC Role / Device Role / Timing Role: Low-side synchronous FET in 3+1 phase VRM designs, driven by integrated controller with 3.3 V gate output. Use Value: VGS(TH) range (1.4–3.5 V) ensures full enhancement at 3.3 V drive, eliminating need for level-shifting circuitry. |
| Industrial LED Backlight Drivers | Server PSU OR-ing Circuits |
Use Scenario: Constant-current switching in high-brightness LCD backlight inverters for medical displays and industrial HMIs. IC Role / Device Role / Timing Role: PWM-controlled current sink in boost-derived constant-current topology with 100–500 kHz switching. Use Value: 210 A pulsed drain rating (IDM) supports peak currents during startup and fault transients without SOA violation. | Use Scenario: Reverse-polarity protection and hot-swap redundancy in 12 V intermediate bus architectures for rack-mounted servers. IC Role / Device Role / Timing Role: Low-RDS(ON) pass element in ideal diode controller IC-based OR-ing configuration. Use Value: 1.3 V body diode VSD at 20 A enables low-loss freewheeling during transient reverse-voltage events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N10F7 | RDS(ON) = 10.5 mΩ @ 10 V, QG = 42 nC, TO263 package | Higher thermal mass but larger footprint; requires different PCB layout and heatsinking strategy | Select when lower RDS(ON) outweighs board space constraints and TO252 layout reuse is not required. |
| IRF7470PBF | RDS(ON) = 14.5 mΩ @ 10 V, QG = 27 nC, SO-8 package, non-AEC-Q101 | Lower gate charge but limited to 30 A continuous current and lacks automotive qualification | Select for cost-sensitive consumer power supplies where AEC-Q101 compliance is unnecessary and SO-8 footprint is preferred. |
Compared with STL100N10F7 and IRF7470PBF, DMT10H015LK3-13 offers optimal balance of TO252 manufacturability, AEC-Q101 reliability, and 15 mΩ/33.3 nC performance-making it preferred for automotive and industrial DC-DC where footprint, qualification, and thermal design converge.
Availability
DMT10H015LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, notebook VRMs, and industrial LED backlight drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMT10H015LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, computing, and industrial applications where ruggedness, low RDS(ON), and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum safe operating temperature for DMT10H015LK3-13?
The junction temperature must not exceed +150°C under any operating condition. At TC = +70°C, the continuous drain current derates to 42.1 A. Thermal design must account for RθJC = 2°C/W and PCB copper area-minimum recommended layout uses 1-inch square 2 oz copper for 2.9 W dissipation.
Does DMT10H015LK3-13 require gate resistors for EMI control?
Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (CRSS = 6.9 pF) and parasitic inductance. This reduces dv/dt-induced shoot-through risk and meets CISPR-25 Class 5 radiated emissions targets in automotive applications.
Can DMT10H015LK3-13 be used in synchronous rectification without an external Schottky diode?
Yes-the integrated body diode has 1.3 V forward voltage at 20 A and 37.9 ns reverse recovery time, enabling use as a synchronous rectifier in buck converters up to 500 kHz. However, for >1 MHz operation or ultra-low VSD, an external Schottky may still be preferred.
Is the TO252 (DPAK) package lead-free and RoHS-compliant?
Yes-DMT10H015LK3-13 uses matte tin annealed over copper leadframe, fully compliant with EU RoHS Directive 2015/863/EU (RoHS 3). It is also halogen- and antimony-free ("Green" per Diodes' definition: Br+Cl <1500 ppm, Sb <1000 ppm).
DMT10H015LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1871 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMT10H015LK3-13 FAQ
1.How can I place an order for DMT10H015LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H015LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H015LK3-13 reliable?
The price and inventory of DMT10H015LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H015LK3-13 is usually 5 days.
3.What payment methods are accepted for DMT10H015LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H015LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H015LK3-13?
DMT10H015LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H015LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H015LK3-13?
For technical support, including DMT10H015LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H015LK3-13 requirements.
6.How does Aetrix verify that DMT10H015LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H015LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H015LK3-13 meets industry standards.
7.What is the process for return or replacement of DMT10H015LK3-13?
All DMT10H015LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H015LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H015LK3-13 part is unused and in its original packaging.
Return procedure for DMT10H015LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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