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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H015LPS-13

Name: DMT10H015LPS-13
Brand: Diodes Incorporated
SKU: DMT10H015LPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H015LPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT10H015LPS-13.pdf

Description:: MOSFET N-CH 100V 7.3A PWRDI5060

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Product details

Overview

DMT10H015LPS-13 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in PowerDI5060-8 package, delivering 16 mΩ R_DS(ON) at V_GS = 10 V and 44 A continuous drain current at T_C = +25°C. It serves as a high-efficiency load switch in notebook battery management systems, with fast switching (t_F = 8.1 ns), low gate charge (Q_G = 33.3 nC), and thermally optimized construction for thin-profile applications.

For engineers reviewing the DMT10H015LPS-13 datasheet, DMT10H015LPS-13 pinout, DMT10H015LPS-13 application in DC-DC converters or motor control, or DMT10H015LPS-13 equivalent for high-current load switching, this page provides verified electrical parameters, thermal performance data, package layout guidance, and real-world design context aligned with JEDEC reliability standards.

Technical Context

This MOSFET employs planar trench-gate technology to balance low on-resistance and fast switching dynamics. Its R_DS(ON) remains stable across −55°C to +150°C junction temperature, with normalized variation ≤1.4× at T_J = 150°C (V_GS = 10 V, I_D = 20 A). Gate threshold voltage (V_GS(TH)) is tightly distributed between 1.4 V and 3.0 V, enabling robust drive compatibility with 3.3 V and 5 V logic controllers.

The device integrates a low-forward-voltage body diode (V_SD = 0.9–1.3 V at I_S = 20 A) with t_RR = 37.9 ns and Q_RR = 51.9 nC, supporting synchronous rectification and bidirectional current handling in buck converters. Its C_iss = 1871 pF and Cr_ss = 6.9 pF support efficient gate-drive design with minimal Miller-induced oscillation risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports input rails up to 80 V DC with 20% margin for transient spikes in industrial and notebook power systems
R_DS(ON)	16 mΩ @ V_GS = 10 V, I_D = 20 A - enables ≤0.64 W conduction loss at 40 A, critical for thermal budget in compact PCB layouts
I_D (continuous)	44 A @ T_C = +25°C - sustains high pulsed loads in battery protection circuits without derating when mounted on 2 oz copper thermal pad
Q_G	33.3 nC - allows full turn-on with <1 µs delay using standard 1-A gate drivers, minimizing switching transition losses
R_θJC	2.7 °C/W - enables direct heatsink attachment via exposed drain pad, achieving <50°C junction rise at 30 W dissipation
t_F	8.1 ns - reduces switching tail time in 500 kHz–1 MHz DC-DC stages, lowering EMI generation and improving efficiency
V_GS(TH)	1.4–3.0 V - ensures reliable turn-on with 3.3 V microcontroller GPIOs while avoiding false triggering from noise below 1.4 V

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-terminal leadless package with exposed drain paddle (pins 2–7 = Drain, pins 1 & 8 = Source, pin 4 = Gate), 1.0 mm max profile, RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1, 8	Source	Low-impedance return path; dual-source configuration reduces source inductance for high di/dt stability
2–7	Drain	Electrically and thermally connected to exposed copper paddle; primary heat transfer path to PCB ground plane
4	Gate	Central gate terminal minimizes loop inductance; compatible with standard SMT pick-and-place and reflow profiles

Key Features

Feature	Design Value
Thermally efficient package	PowerDI5060-8's 2.7 °C/W R_θJC enables >40 W power handling without external heatsink on 2 oz FR-4
Low R_DS(ON) at 4.5 V drive	25 mΩ @ V_GS = 4.5 V, I_D = 5 A - supports direct interface with low-voltage microcontrollers in portable systems
Fast switching with low Q_GD	5.1 nC gate-drain charge limits Miller plateau duration, reducing cross-conduction risk in half-bridge topologies
Thin 1.1 mm profile	Enables integration into space-constrained notebook battery packs and ultra-thin industrial control modules
Halogen- and antimony-free	Meets IPC-1752A "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU Directive 2015/863/EU

Applications

High-Efficiency Notebook Battery Switch

Industrial DC-DC Load Switch

Use Scenario: Bidirectional power path control between main battery and backup cell in ultrabook platforms with dynamic power sharing.

IC Role / Device Role / Timing Role: Primary N-channel load switch managing 20–40 A discharge paths with reverse-current blocking during hot-swap events.

Use Value: 16 mΩ R_DS(ON) limits voltage drop to <0.64 V at 40 A, preserving system runtime; body diode t_RR = 37.9 ns prevents shoot-through during polarity reversal.

Use Scenario: Remote ON/OFF control of 24 V/36 V auxiliary rails in programmable logic controller (PLC) backplanes.

IC Role / Device Role / Timing Role: High-side load switch driven by isolated 5 V GPIO, handling inrush currents up to 150 A (10 µs pulse).

Use Value: 150 A pulsed drain rating and 85 mJ avalanche energy (E_AS) tolerate capacitor charging surges without clamping circuitry.

Brushless DC Motor Gate Driver

USB-C Power Delivery Load Switch

Use Scenario: Low-side switching in 3-phase BLDC inverter stages for HVAC blowers and industrial fans operating at 20–50 kHz PWM.

IC Role / Device Role / Timing Role: Fast-turning low-side switch synchronized with high-side gate drivers, requiring minimal dead-time insertion.

Use Value: 8.1 ns fall time and 19.7 ns turn-off delay enable precise timing control at 50 kHz, reducing torque ripple and acoustic noise.

Use Scenario: Input protection switch in USB-C PD 3.0 sink designs supporting 20 V/5 A (100 W) power negotiation.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected load switch placed between CC logic and VBUS path.

Use Value: 100 V V_DSS withstands 20 V nominal + 40 V surge per USB-C spec; 1.5 A continuous body diode current supports VBUS-to-CC fault current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT10H015LPS-7	Same die, identical R_DS(ON), Q_G, and thermal specs; differs only in packaging (7-inch tape reel vs. 13-inch)	No functional difference; selected solely for production line feeder compatibility or volume order optimization	Choose -7 for automated SMT lines with 7″ tape feeders; no electrical or thermal trade-offs.
DMTH10H015LPS-13	Automotive-grade variant (AEC-Q101 qualified); same R_DS(ON), but tighter V_GS(TH) distribution (1.5–2.5 V) and extended temperature validation (−40°C to +175°C)	Required for automotive infotainment power rails or ADAS camera modules where PPAP documentation and IATF 16949 traceability are mandatory	Select DMTH10H015LPS-13 only when automotive qualification, change control, or extended temperature operation is contractually required.

Compared with DMT10H015LPS-13, the -7 variant offers identical performance in a different reel size for manufacturing flexibility, while DMTH10H015LPS-13 adds AEC-Q101 compliance and tighter parametric screening-neither is a drop-in replacement for the other without verifying qualification and supply-chain requirements.

Availability

DMT10H015LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, industrial DC-DC load switching, and BLDC motor control applications requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant sourcing.

Supply support for DMT10H015LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

This MOSFET belongs to Diodes' PowerDI® portfolio-designed specifically for thermally demanding, space-constrained applications where low R_DS(ON), fast switching, and thin-profile packaging are essential for system-level efficiency and miniaturization.

FAQ

What is the maximum safe operating temperature for DMT10H015LPS-13?

The device is rated for junction temperatures from −55°C to +150°C. Under continuous operation at T_C = +25°C, its 44 A current rating assumes adequate PCB copper area (2 oz, 1-inch square thermal pad). Derating begins above T_C = +70°C, reaching 28 A at T_C = +100°C per datasheet Figure 5 and Table "Maximum Ratings."

Can DMT10H015LPS-13 be used in synchronous rectification topologies?

Yes-the integrated body diode has V_SD = 0.9–1.3 V at I_S = 20 A and t_RR = 37.9 ns, making it suitable for synchronous rectification in buck converters up to 1 MHz. Its low Q_RR (51.9 nC) and fast recovery reduce reverse-recovery losses compared to discrete Schottky alternatives.

Does DMT10H015LPS-13 require a gate resistor for stability?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by L_GS/C_iss resonance and limit peak gate current during fast transitions. The device's R_G = 0.75 Ω (typical) and low Cr_ss (6.9 pF) make it responsive to moderate gate resistance without compromising switching speed.

How does the PowerDI5060-8 package improve thermal performance over SO-8?

PowerDI5060-8 delivers R_θJC = 2.7 °C/W versus ~6–8 °C/W for standard SO-8, due to its exposed drain paddle directly soldered to PCB copper. This reduces junction-to-board thermal resistance by >50%, enabling higher continuous current (44 A vs. ~15–20 A) without heatsinks in identical board layouts.

DMT10H015LPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1871 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta), 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMT10H015LPS-13 FAQ

1.How can I place an order for DMT10H015LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H015LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H015LPS-13 reliable?

The price and inventory of DMT10H015LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H015LPS-13 is usually 5 days.

3.What payment methods are accepted for DMT10H015LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H015LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H015LPS-13?

DMT10H015LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H015LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H015LPS-13?

For technical support, including DMT10H015LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H015LPS-13 requirements.

6.How does Aetrix verify that DMT10H015LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H015LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H015LPS-13 meets industry standards.

7.What is the process for return or replacement of DMT10H015LPS-13?

All DMT10H015LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H015LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H015LPS-13 part is unused and in its original packaging.

Return procedure for DMT10H015LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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