Diodes Incorporated DMT10H015LSS-13

Overview

DMT10H015LSS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SO-8 package, rated for 8.3A continuous drain current at V_GS = 10V, with R_DS(ON) = 16mΩ (max), and qualified to AEC-Q101. It serves as a high-efficiency load switch in notebook battery power management systems.

For engineers reviewing the DMT10H015LSS datasheet, DMT10H015LSS pinout, DMT10H015LSS application, or DMT10H015LSS equivalent, key selection criteria include R_DS(ON) at 4.5V/6V/10V gate drive, UIS ruggedness, SO-8 thermal performance (R_θJA = 75°C/W with 1-in² copper), and AEC-Q101 qualification for automotive-adjacent portable power designs.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low conduction loss while maintaining fast switching (t_D(ON) = 6.5ns, t_D(OFF) = 19.7ns) and low gate charge (Q_G = 33.3nC). Its body diode exhibits V_SD = 0.9–1.3V at 20A, supporting synchronous rectification in DC-DC converters.

The device features 100% production-tested unclamped inductive switching (UIS) capability (I_AS = 7.5A, E_AS = 85mJ), enabling robust operation in load-switch and power-path fault conditions without external snubbers.

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal performance; molded green compound (UL 94V-0), matte tin-plated leads, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with DMT10H015LSS, DMT10H015LPS-13 offers superior thermal management for high-power density designs, while SI7157DP-T1-GE3 trades ruggedness and qualification for higher current and lower R_DS(ON), requiring careful evaluation of fault-energy margins.

Availability

DMT10H015LSS is available at Aetrix Electronics and suitable for notebook battery management, DC-DC converter high-side switching, and USB-C power delivery load switching requiring stable component supply and AEC-Q101 reliability assurance.

Supply support for DMT10H015LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power switching in portable computing and industrial power systems where low R_DS(ON), fast switching, and rugged transient handling are critical.

FAQ

What is the maximum safe operating junction temperature for DMT10H015LSS?

The absolute maximum junction temperature is +150°C, and the device is characterized across −55°C to +150°C. Thermal design must ensure T_J remains below this limit under worst-case ambient and power dissipation conditions, using the specified R_θJA = 75°C/W (with 1-in² copper) or R_θJC = 12°C/W for heatsink-coupled layouts.

Does DMT10H015LSS support 5V gate drive in practical applications?

Yes - R_DS(ON) is specified at 18mΩ max (V_GS = 6V) and 25mΩ max (V_GS = 4.5V), confirming full enhancement with standard 5V logic or PMIC outputs. Gate threshold voltage (V_GS(TH)) ranges from 1.4V to 3.0V, ensuring reliable turn-on with 5V drive even considering process variation and temperature drift.

How is the SO-8 package's exposed drain pad connected internally?

All four drain pins (Pins 3, 4, 5, 6) and the exposed bottom thermal pad are electrically and thermally connected to the MOSFET's drain terminal. This multi-pin drain configuration reduces package inductance and spreads heat across the PCB copper area, directly supporting the stated R_θJA = 75°C/W rating with proper board layout.

Is DMT10H015LSS suitable for reverse polarity protection circuits?

No - as an N-channel MOSFET in SO-8, it lacks integrated body diode orientation for reverse-voltage blocking in series-with-load configurations. For reverse polarity protection, a P-channel device or back-to-back N-channel arrangement is required; this part is optimized for forward-load switching where its low R_DS(ON) and UIS rating provide primary value.