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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H015SK3-13

Name: DMT10H015SK3-13
Brand: Diodes Incorporated
SKU: DMT10H015SK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H015SK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMT10H015SK3-13.pdf

Description:: MOSFET N-CH 100V 54A TO252

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Product details

Overview

DMT10H015SK3-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 54A continuous drain current at V_GS = 10V, with R_DS(ON) = 14 mΩ max and Q_g = 30.1 nC. It delivers low conduction and switching losses for high-efficiency DC-DC converters and LED backlighting systems.

For engineers reviewing the DMT10H015SK3-13 datasheet, DMT10H015SK3-13 pinout, DMT10H015SK3-13 application, or DMT10H015SK3-13 equivalent, key selection criteria include its 100V V_DSS, 14 mΩ R_DS(ON) @ 10V, 30.1 nC total gate charge, 100% production-tested UIS robustness, and TO252 thermal performance with R_θJC = 2°C/W.

Technical Context

This MOSFET employs planar trench-enhanced silicon technology to achieve low R_DS(ON) while maintaining fast switching via minimized Q_gd (6.5 nC) and Cr_ss (26 pF). Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 3.3V/5V logic drivers.

The device integrates a robust body diode with 48A continuous forward current rating and 43 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100V drain-source blocking voltage in off-state, suitable for 48V input bus and 12V output DC-DC stages.
R_DS(ON) max	14 mΩ @ V_GS = 10V - Limits I²R conduction loss to ≤15.7 W at 54A, enabling high-current power stages with minimal heatsinking.
Q_g	30.1 nC - Enables efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., TC4427), reducing dynamic loss in SMPS.
I_D cont	54 A @ T_C = +25°C - Supports high-power density designs when mounted on 1-inch² copper pad per datasheet Note 6.
E_AS	12.5 mJ @ L = 0.1 mH - Confirmed unclamped inductive switching capability ensures reliability in hard-switched flyback and boost converters.
R_θJC	2°C/W - Allows direct thermal path from junction to PCB copper, supporting >90% power dissipation through exposed drain pad.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, lead-free and RoHS 3 compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Low-side return path; connects to ground or low-side node; carries full load current and body diode conduction.
Pin 2 (Gate)	Control electrode	Receives gate drive signal; requires <20V absolute max; 30.1 nC total charge determines driver sizing and rise/fall times.
Pin 3 (Drain)	Drain terminal (exposed pad)	High-side power input; electrically and thermally connected to large copper area; handles 100V blocking and 54A conduction.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche energy handling (12.5 mJ) across all units-no screening failure risk in inductive load transients.
Low Q_gd/Q_gs ratio	6.5 nC / 7.5 nC = 0.87 - Reduces Miller plateau duration, improving immunity to dv/dt-induced false turn-on in high-side configurations.
Thermally optimized TO252 layout	R_θJC = 2°C/W enables >2.9W continuous dissipation with minimal board area-critical for space-constrained industrial power modules.
Green, halogen-free construction	<900 ppm Br/Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 material declarations for automotive and medical OEM compliance.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter in telecom base station power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz with 54A peak current.

Use Value: 14 mΩ R_DS(ON) reduces conduction loss by 32% vs. comparable 20 mΩ devices, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Constant-current LED string driver for automotive center console displays.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating 48V input to drive 12–24V LED strings.

Use Value: 100V V_DSS and 100% UIS rating prevent failure during LED open-circuit transients, eliminating need for external clamping.

Industrial Motor Control

Server VRM High-Side Switch

Use Scenario: Half-bridge gate driver stage in 24V BLDC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at 20 kHz with 45A RMS current.

Use Value: 43 ns t_RR and low Q_rr (65.1 nC) minimize body diode reverse recovery loss, reducing MOSFET temperature rise by 8°C at full load.

Use Scenario: High-side switch in 48V-to-12V intermediate bus converter for AI accelerator racks.

IC Role / Device Role / Timing Role: Primary switching element in interleaved phase-leg with 1 MHz operation and 30A average current.

Use Value: 30.1 nC Q_g allows use of compact dual-MOSFET gate drivers (e.g., UCC27611), cutting driver BOM cost by 22% vs. higher-Q_g alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(ON) = 9.5 mΩ @ 10V, Q_g = 42 nC, TO263 package	Higher gate charge increases switching loss at >300 kHz; larger TO263 footprint limits board density	Select only if lower R_DS(ON) outweighs gate drive complexity and layout area penalty.
IPB180N10N3 G	R_DS(ON) = 10.5 mΩ @ 10V, Q_g = 48 nC, PG-TO263-3 package	Higher Q_g demands stronger gate driver; no production UIS test data published	Prefer only for cost-sensitive applications where avalanche robustness is not required and thermal margin exceeds 25°C.

Compared with STL130N10F7 and IPB180N10N3 G, DMT10H015SK3-13 offers optimal balance of low R_DS(ON), moderate Q_g, verified UIS reliability, and compact TO252 footprint-making it superior for high-frequency, space-constrained, and transient-heavy industrial power designs.

Availability

DMT10H015SK3-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and industrial motor control circuits requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT10H015SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount power conversion systems where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum safe operating temperature for DMT10H015SK3-13?

The junction temperature must not exceed +150°C under any operating condition. At T_C = +70°C, the continuous drain current derates to 43A. Thermal design must ensure R_θJA ≤ 42°C/W using the recommended 1-inch² copper pad, and R_θJC = 2°C/W must be leveraged via direct thermal coupling to the PCB's internal ground plane.

Does DMT10H015SK3-13 require a gate resistor for EMI suppression?

A gate resistor (typically 5–15 Ω) is recommended to dampen ringing caused by parasitic inductance between driver and gate, especially at >300 kHz switching. The device's low R_g (0.69 Ω) and 6.5 nC Q_gd make it susceptible to dv/dt-induced oscillation without proper gate control.

Can DMT10H015SK3-13 be used in linear mode (as a pass transistor)?

No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve (Figure 12) shows only pulsed operation limits; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(ON) and lack of SOA derating data beyond 10 ms pulses.

Is the body diode suitable for synchronous rectification?

Yes-the body diode supports 48A continuous forward current and exhibits 43 ns t_RR with 65.1 nC Q_RR, enabling use in synchronous buck topologies up to 1 MHz. However, external Schottky diodes may still be preferred in ultra-low-voltage (<3V) outputs where V_SD = 1.3V causes excessive forward drop.

DMT10H015SK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2343 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 4.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

DMT10H015SK3-13 FAQ

1.How can I place an order for DMT10H015SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H015SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H015SK3-13 reliable?

The price and inventory of DMT10H015SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H015SK3-13 is usually 5 days.

3.What payment methods are accepted for DMT10H015SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H015SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H015SK3-13?

DMT10H015SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H015SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H015SK3-13?

For technical support, including DMT10H015SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H015SK3-13 requirements.

6.How does Aetrix verify that DMT10H015SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H015SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H015SK3-13 meets industry standards.

7.What is the process for return or replacement of DMT10H015SK3-13?

All DMT10H015SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H015SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H015SK3-13 part is unused and in its original packaging.

Return procedure for DMT10H015SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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