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Diodes Incorporated DMT10H015SPS-13
- Part No.:
- DMT10H015SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT10H015SPS-13.pdf
- Description:
- MOSFET N-CH 100V PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:5,972
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Product details
Overview
DMT10H015SPS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency load switching and battery power management. It delivers RDS(ON) = 14.5 mΩ @ VGS = 10 V, 53 A continuous drain current at TC = +25°C, and features 100% production-tested UIS robustness - ideal for notebook DC-DC converters and motor control stages.
For engineers reviewing the DMT10H015SPS datasheet, DMT10H015SPS pinout, DMT10H015SPS application, or DMT10H015SPS equivalent, key selection criteria include its low RDS(ON) at 6 V gate drive (19.5 mΩ), fast switching (tF = 9.6 ns), thermal resistance RθJC = 1.6°C/W, and JEDEC-qualified reliability for industrial power systems.
Technical Context
This MOSFET employs trench-gate silicon technology to simultaneously minimize conduction loss and maintain fast switching performance. Its internal structure integrates an optimized body diode with tRR = 43.1 ns and QRR = 65.1 nC, supporting synchronous rectification in buck converters.
The device operates across –55°C to +150°C junction temperature range and is rated for ±20 V gate-source voltage. Its SOA curve supports single-pulse operation up to 120 A (10 µs), with avalanche energy EAS = 85 mJ (L = 3 mH), enabling rugged operation in inductive load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage without breakdown, suitable for 48 V system rails and 12 V/24 V automotive-derived supplies. |
| RDS(ON) | 14.5 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 20 A, critical for thermally constrained notebook battery switches. |
| ID (continuous) | 53 A @ TC = +25°C - Supports high-current load switching when mounted on copper-backed PCBs with exposed drain pad thermal path. |
| Qg | 30.1 nC - Low total gate charge reduces driver power demand and enables efficient operation with standard gate drivers (e.g., TC4427). |
| tF | 9.6 ns - Fast fall time minimizes switching transition losses in high-frequency DC-DC converters (>500 kHz). |
| EAS | 85 mJ @ L = 3 mH - Confirmed unclamped inductive switching capability ensures reliability in motor drive flyback energy handling. |
| RθJC | 1.6°C/W - Enables direct thermal coupling to heatsink or PCB copper, delivering >75 W power dissipation capability at TC = +25°C. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad (8-terminal configuration), UL 94V-0 molded compound, and matte tin–annealed copper leadframe for solderability per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S (Source) | Power return node for channel current | Three parallel source terminals (Pins 1, 3, 5) reduce source inductance and improve current sharing in high-di/dt applications. |
| D (Drain) | Main current-carrying terminal (bulk connection) | Five drain terminals (Pins 2, 4, 6, 7, 8) plus large exposed bottom pad provide low-inductance, low-resistance path to PCB ground plane. |
| G (Gate) | Control input for channel modulation | Single gate terminal (Pin 1) located adjacent to source for minimized gate loop inductance during high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness without derating - eliminates need for external snubbers in motor control H-bridge freewheeling paths. |
| Thermally efficient PowerDI5060-8 | RθJC = 1.6°C/W enables >75 W power handling with minimal heatsinking - reduces board area vs. TO-252 or SO-8 alternatives. |
| Low RDS(ON) at 6 V drive | 19.5 mΩ @ VGS = 6 V allows use with 5 V logic-level controllers (e.g., microcontroller GPIO), eliminating level-shifter requirement. |
| Low Qgd/Qg ratio | 6.5 nC / 30.1 nC = 0.22 - Reduces Miller plateau duration, improving immunity to dv/dt-induced false turn-on in high-side configurations. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 material declarations for RoHS 3 and automotive supply chain traceability. |
Applications
| Portable Battery Load Switch | 48 V DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-side power switch controlling main battery rail to CPU/GPU subsystem in ultrabook platforms. IC Role / Device Role / Timing Role: N-channel MOSFET used as active load switch with integrated gate driver and reverse-current blocking. Use Value: 14.5 mΩ RDS(ON) limits voltage drop to <300 mV at 20 A, preserving battery runtime; 100% UIS rating prevents failure during hot-plug events. |
Use Scenario: Primary-side high-frequency switching element in isolated 48 V-to-12 V buck converter for server power distribution. IC Role / Device Role / Timing Role: Main power switch operating at 600 kHz with synchronous rectification, requiring low Qg and fast tF. Use Value: 30.1 nC Qg and 9.6 ns tF enable <1.2% switching loss at 600 kHz, while RθJC = 1.6°C/W sustains 75 W dissipation without forced air. |
| Industrial Motor Control Half-Bridge | Automotive Body Control Module (BCM) Load Driver |
|
Use Scenario: Low-side switch in brushed DC motor driver for HVAC blower or seat actuator in industrial equipment. IC Role / Device Role / Timing Role: N-channel MOSFET configured in half-bridge topology with external high-side switch, managing PWM-driven inductive loads. Use Value: 85 mJ EAS withstands repeated inductive kickback from 24 V motors; 53 A ID supports peak currents up to 120 A (pulsed). |
Use Scenario: High-current load driver for headlight dimming or window lift control in non-safety-critical BCM functions. IC Role / Device Role / Timing Role: Robust power switch interfacing with CAN-based microcontroller, requiring AEC-Q200-aligned reliability. Use Value: JEDEC-qualified high-reliability construction and –55°C to +150°C operation meet extended temperature requirements of under-hood modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H015LPS-13 | Same die, PowerDI3333 package (RθJC = 2.5°C/W, ID = 42 A @ TC = +25°C) | Lower power density; suited for space-constrained but lower thermal budget designs | Select when board layout restricts exposed pad area but thermal load ≤50 W. |
| DMTH10H015LPS-13 | Automotive-grade (AEC-Q101 qualified), identical RDS(ON), same PowerDI5060-8 package | Required for PPAP-compliant automotive programs; includes extended reliability testing and IATF 16949 traceability | Choose for Tier 1 automotive BOMs where change control and qualification documentation are mandatory. |
Compared with DMT10H015SPS, DMT10H015LPS-13 trades thermal performance for smaller footprint, while DMTH10H015LPS-13 adds automotive qualification overhead without electrical or mechanical change - enabling drop-in compliance upgrades in existing designs.
Availability
DMT10H015SPS is available at Aetrix Electronics and suitable for notebook battery management, industrial motor drives, and 48 V DC-DC converter designs requiring stable component supply, JEDEC-qualified reliability, and thermal-efficient surface-mount packaging.
Supply support for DMT10H015SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current switching in portable and industrial power systems where low RDS(ON), fast switching, and rugged avalanche performance are critical.
FAQ
What is the maximum safe operating temperature for DMT10H015SPS?
The device supports junction temperatures from –55°C to +150°C. For continuous operation, thermal design must ensure TJ ≤ +150°C using RθJC = 1.6°C/W and measured case temperature. At TC = +70°C, continuous current derates to 43 A per datasheet maximum ratings table.
Does DMT10H015SPS require a gate resistor for stability?
A gate resistor (typically 5–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's low Rg = 0.69 Ω and Ciss = 2343 pF make it sensitive to PCB layout parasitics - proper gate routing and localized decoupling are essential.
Can DMT10H015SPS be used in synchronous rectification topologies?
Yes - its body diode exhibits tRR = 43.1 ns and QRR = 65.1 nC at IF = 10 A, enabling effective synchronous rectification in buck converters up to 1 MHz. However, external FET control timing must account for reverse recovery delay to avoid shoot-through.
Is the PowerDI5060-8 package compatible with standard reflow profiles?
Yes - the package is qualified for lead-free reflow per J-STD-020, with moisture sensitivity level 1. Recommended peak temperature is 260°C for ≤60 seconds, and preheat ramp rate ≤3°C/s. The matte tin finish ensures reliable solder joint formation on OSP- or ENIG-finished PCBs.
DMT10H015SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1871 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta), 46W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT10H015SPS-13 FAQ
1.How can I place an order for DMT10H015SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H015SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H015SPS-13 reliable?
The price and inventory of DMT10H015SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H015SPS-13 is usually 5 days.
3.What payment methods are accepted for DMT10H015SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H015SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H015SPS-13?
DMT10H015SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H015SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H015SPS-13?
For technical support, including DMT10H015SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H015SPS-13 requirements.
6.How does Aetrix verify that DMT10H015SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H015SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H015SPS-13 meets industry standards.
7.What is the process for return or replacement of DMT10H015SPS-13?
All DMT10H015SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H015SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H015SPS-13 part is unused and in its original packaging.
Return procedure for DMT10H015SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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