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Diodes Incorporated DMT10H017LPD-13
- Part No.:
- DMT10H017LPD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT10H017LPD-13.pdf
- Description:
- MOSFET 2N-CH 100V 54.7A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:2,330
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Product details
Overview
DMT10H017LPD from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type E) package, rated for 100V VDSS, 17.4 mΩ RDS(ON) @ 10V VGS, and 54.7A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters.
For engineers reviewing the DMT10H017LPD datasheet, DMT10H017LPD pinout, DMT10H017LPD application, or DMT10H017LPD equivalent, key selection criteria include its dual-channel layout, low gate charge (28.6 nC @ 10V), fast switching (tF = 21.6 ns), and robust avalanche rating (EAS = 150 mJ @ 3 mH).
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single thermally optimized PowerDI5060-8 package with exposed drain pads for low RθJC (1.6 °C/W). Its gate threshold voltage (1–3 V) supports 4.5V logic-level drive, while low Ciss (1986 pF) and Crss (20 pF) enable high-frequency operation in hard-switched topologies.
The device features 100% unclamped inductive switching (UIS) qualification, body diode tRR of 40.6 ns, and QRR of 58.1 nC - critical for minimizing commutation losses in synchronous buck and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage for primary-side switching in 48V-input DC-DC systems |
| RDS(ON) @ 10V | 17.4 mΩ - On-resistance enabling ≤0.95 W conduction loss at 45 A (TC = 25°C) |
| ID (Continuous) | 54.7 A - Sustained current capability with heatsink mounting on FR-4 board (2 oz Cu) |
| Qg @ 10V | 28.6 nC - Gate charge determining driver power requirement and switching speed in 300–500 kHz designs |
| EAS | 150 mJ @ 3 mH - Avalanche energy rating ensuring reliability during transient overcurrent events |
| tRR | 40.6 ns - Body diode reverse-recovery time limiting shoot-through risk in synchronous rectification |
| RθJC | 1.6 °C/W - Junction-to-case thermal resistance supporting high-power density layouts with direct PCB copper thermal path |
Pinout & Package
Package: PowerDI5060-8 (Type E), surface-mount, thermally enhanced with dual exposed drain pads. Molded green compound (UL 94V-0), matte tin annealed terminals, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Source of Channel 1 | Low-side return node for first MOSFET; electrically isolated from S2 but shares common thermal pad |
| Pin 2 (D2) | Drain of Channel 2 | High-current output node tied to exposed drain pad; requires full-copper thermal land per datasheet layout |
| Pin 3 (D1) | Drain of Channel 1 | High-current output node tied to same exposed drain pad as D2; enables parallel drain connection |
| Pin 4 (G2) | Gate of Channel 2 | Control input for second MOSFET; separate from G1 to support independent gate drive timing |
| Pin 5 (D1) | Drain of Channel 1 (repeated) | Redundant drain terminal for mechanical stability and current sharing; connected internally to Pin 3 |
| Pin 6 (D2) | Drain of Channel 2 (repeated) | Redundant drain terminal for mechanical stability and current sharing; connected internally to Pin 2 |
| Pin 7 (G1) | Gate of Channel 1 | Control input for first MOSFET; isolated gate path minimizes crosstalk in high-dV/dt environments |
| Pin 8 (S2) | Source of Channel 2 | Low-side return node for second MOSFET; electrically isolated from S1 but shares common thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS qualified | Guarantees survivability under unclamped inductive load transients without derating |
| Low RDS(ON) @ 4.5V | 30.3 mΩ enables efficient operation with 5V microcontroller or gate driver outputs |
| Fast body diode recovery | tRR = 40.6 ns and QRR = 58.1 nC reduce cross-conduction losses in synchronous rectifiers |
| Thermally optimized package | PowerDI5060-8 delivers 78 W power dissipation at TC = 25°C via dual exposed drain pads |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive environmental standards |
Applications
| Server VRM | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: 48V-to-12V intermediate bus converter in datacenter server power supplies. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing Schottky diodes in secondary-side synchronous buck stage. Use Value: Reduces conduction loss by >40% vs. 40V Schottky, enabling >95% efficiency at 50A load with 100 kHz switching. |
Use Scenario: Isolated 24V-to-5V flyback converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side switching MOSFET pair driving transformer in quasi-resonant topology. Use Value: Low Coss (333 pF) and fast tF (21.6 ns) minimize switching loss at 132 kHz, improving light-load efficiency. |
| Automotive ADAS Camera Power | Telecom PoE++ PSE |
|
Use Scenario: Compact 12V-to-3.3V point-of-load regulator for radar sensor SoCs. IC Role / Device Role / Timing Role: Dual N-channel high-side switch controlling redundant power paths with independent gate control. Use Value: Matched RDS(ON) ensures balanced current sharing between channels, meeting ASIL-B functional safety requirements. |
Use Scenario: 90W Power Sourcing Equipment (PoE++) injector delivering power over Category 6A cable. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward converter handling 4-pair power delivery. Use Value: 100V rating and 150 mJ EAS withstand sustained fault currents during cable short-circuit events per IEEE 802.3bt. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H017LPSQ-13 | AEC-Q101 qualified; identical RDS(ON), VDSS, and package but with automotive-grade process and PPAP support | Required for automotive ADAS or infotainment systems needing IATF 16949 traceability and change control | Select when automotive qualification, extended temperature validation (-40°C to +150°C), or PPAP documentation is mandatory |
| SI7157DN-T1-GE3 | Single-channel 100V MOSFET in PowerPAK SO-8; higher RDS(ON) (22 mΩ), no UIS rating, lower Qg (22 nC) | Suitable for cost-sensitive industrial SMPS where dual-channel integration is unnecessary | Choose only if board space allows two discrete devices and avalanche robustness is not required |
Compared with DMT10H017LPD, DMTH10H017LPSQ-13 adds automotive qualification without sacrificing electrical performance, while SI7157DN-T1-GE3 trades dual-channel integration and UIS ruggedness for lower gate drive demand and unit cost in non-automotive applications.
Availability
DMT10H017LPD is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom PoE++ injectors requiring stable component supply and high thermal reliability.
Supply support for DMT10H017LPD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency power conversion in computing, industrial, and communications infrastructure where low RDS(ON), fast switching, and thermal robustness are critical.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMT10H017LPD?
The device operates from –55°C to +150°C junction temperature. At TJ = 150°C, RDS(ON) increases ~2.2× versus 25°C (per Figure 6), and continuous current must be reduced to ~22 A at TC = 70°C per the SOA curve (Figure 12). Derating follows linear interpolation between published TC ratings.
Can DMT10H017LPD be used in paralleled configurations across multiple packages?
No - the device is designed as a monolithic dual-channel MOSFET within one package; paralleling multiple DMT10H017LPD units is not recommended due to mismatch in dynamic parameters (Qg, trr) and thermal coupling limitations. For higher current, use larger single-die alternatives like DMT10H022LPSQ-13.
Does the PowerDI5060-8 package require solder paste stencil adjustments compared to standard SO-8?
Yes - the PowerDI5060-8 has dual exposed drain pads requiring ≥80% solder coverage on each pad (per Diodes' AN-2001). Standard SO-8 stencils yield insufficient volume; recommended stencil aperture is 0.15 mm thick with 1:1 area ratio and 0.25 mm pitch openings aligned to D1/D2 pad centers.
Is the body diode suitable for reverse polarity protection in 48V systems?
No - the intrinsic body diode is rated for 54.7 A continuous forward current but lacks reverse-biased breakdown protection. For reverse polarity protection, external series MOSFETs with dedicated gate control (e.g., ideal diode controllers) are required; this device's body diode is intended only for freewheeling in switching topologies.
DMT10H017LPD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 54.7A (Tc)
- Rds On (Max) @ Id, Vgs:
- 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1986pF @ 50V
- Power - Max:
- 2.2W (Ta), 78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT10H017LPD-13 FAQ
1.How can I place an order for DMT10H017LPD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H017LPD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H017LPD-13 reliable?
The price and inventory of DMT10H017LPD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H017LPD-13 is usually 5 days.
3.What payment methods are accepted for DMT10H017LPD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H017LPD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H017LPD-13?
DMT10H017LPD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H017LPD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H017LPD-13?
For technical support, including DMT10H017LPD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H017LPD-13 requirements.
6.How does Aetrix verify that DMT10H017LPD-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H017LPD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H017LPD-13 meets industry standards.
7.What is the process for return or replacement of DMT10H017LPD-13?
All DMT10H017LPD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H017LPD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H017LPD-13 part is unused and in its original packaging.
Return procedure for DMT10H017LPD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT10H017LPD-13 Tags
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