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Diodes Incorporated DMT10H025LK3-13
- Part No.:
- DMT10H025LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT10H025LK3-13.pdf
- Description:
- MOSFET N-CH 100V 47.2A TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:2,345
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Product details
Overview
DMT10H025LK3-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 47.2A continuous drain current at VGS = 10V, with RDS(ON) = 22 mΩ max, QG = 21 nC, and qualified to AEC-Q101. It serves as a high-efficiency power switch in DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMT10H025LK3-13 datasheet, DMT10H025LK3-13 pinout, DMT10H025LK3-13 application, or DMT10H025LK3-13 equivalent, key selection criteria include its 100% unclamped inductive switching rating, low gate charge for fast switching, thermal resistance of 1.5°C/W (junction-to-case), and automotive-grade reliability per AEC-Q101.
Technical Context
This MOSFET employs planar trench-gate technology optimized for low RDS(ON) and reduced gate charge. Its 100V BVDSS supports industrial and automotive input rails up to 48V nominal with margin, while the 1.5°C/W RθJC enables high-power operation with minimal heatsinking when mounted on a 1-inch copper pad.
The device features a robust body diode with tRR = 38.7 ns and QRR = 53.7 nC, supporting synchronous rectification and flyback topologies. Its VGS(TH) range (1–3 V) ensures stable turn-on across temperature and process variation, and its 100% UIS testing validates ruggedness under inductive load transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands 100V drain-source blocking voltage, suitable for 48V bus systems with transient margin. |
| RDS(ON) Max | 22 mΩ @ VGS = 10V - Enables <1W conduction loss at 20A, critical for high-efficiency power stages. |
| ID (TC = 25°C) | 47.2 A - Continuous current capability with proper PCB copper area, enabling compact 50W+ converter designs. |
| QG | 21 nC - Low gate charge reduces drive power and switching transition time, improving efficiency above 100 kHz. |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance allows direct heatsink mounting or high-current PCB layout without thermal derating. |
| UIS Rating | 15.8 A / 12.5 mJ - Validated unclamped inductive switching performance ensures reliability in motor drives and solenoid control. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics, including temperature cycling and HTRB. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, 3-terminal plastic package with exposed drain pad for thermal and electrical connection. Dimensions per Diodes Inc. outline drawing: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to low-side return path and controls current flow direction. |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input controlling channel conduction; requires 10V for full enhancement and low RDS(ON). |
| Pin 3 (Drain) | Power output terminal (D) | High-current output node tied to exposed metal pad; electrically and thermally coupled to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Validated to 15.8A/12.5mJ - eliminates need for external snubbers in relay/motor drive circuits. |
| Low RDS(ON) at 4.5V VGS | 43.7 mΩ max - enables logic-level gate drive compatibility with 3.3V/5V microcontrollers in space-constrained designs. |
| Low QG and Crss | 21 nC total gate charge, 20 pF reverse transfer capacitance - minimizes Miller effect and improves hard-switching efficiency. |
| AEC-Q101 Qualified | Passed HTGB, TC, HTRB, UHAST - certified for under-hood automotive applications including body control modules. |
| Green, Halogen-Free Construction | <900 ppm Br/Cl, <1000 ppm Sb - meets automotive OEM environmental compliance requirements (e.g., GMW3172, Ford WSS-M99P9999-A1). |
Applications
| Automotive Body Control Module | Industrial DC-DC Buck Converter |
|---|---|
|
Use Scenario: Driving 12V solenoids and relays in door lock, window lift, and lighting control units. IC Role / Device Role / Timing Role: High-side or low-side power switch handling repetitive 20–40A inductive loads with fast turn-off. Use Value: 100% UIS rating prevents failure during coil energy dissipation; AEC-Q101 qualification ensures field reliability over 15-year vehicle life. |
Use Scenario: Primary switch in 48V-to-12V isolated or non-isolated buck converters for factory automation I/O power supplies. IC Role / Device Role / Timing Role: Main power FET operating at 250 kHz with 20A average output current. Use Value: 22 mΩ RDS(ON) and 21 nC QG reduce conduction + switching losses to <1.2W at full load, enabling natural convection cooling. |
| LCD Backlight LED Driver | Server VRM High-Side Switch |
|
Use Scenario: Constant-current switching stage for 24–48V LED strings in commercial signage and medical displays. IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating LED current via current-sense feedback loop. Use Value: Low QGD (3.8 nC) minimizes shoot-through risk in high-frequency dimming; 1.3 Ω gate resistance simplifies gate driver selection. |
Use Scenario: High-side FET in multiphase 48V-to-0.8V VRMs powering AI accelerators and CPUs in data centers. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating with tight dead-time control and high dv/dt immunity. Use Value: 1.5°C/W RθJC enables direct thermal interface to cold plate; 100V rating accommodates 48V bus transients up to ±20%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N10F7 | RDS(ON) = 10.5 mΩ @ 10V, but TO263 package (larger footprint); QG = 42 nC - higher drive loss. | Higher current density but less suited for space-constrained DPAK layouts; better for >60A thermal designs. | Select if board space allows TO263 and lower RDS(ON) outweighs gate drive complexity. |
| IXTP110N10T | TO220 package, RDS(ON) = 11.5 mΩ @ 10V, no AEC-Q101 qualification; RθJC = 1.0°C/W. | Requires mechanical mounting and heatsink; not approved for automotive use; higher thermal performance only with external heatsink. | Choose for cost-sensitive industrial power supplies where qualification and surface-mount are not required. |
Compared with STL100N10F7 and IXTP110N10T, DMT10H025LK3-13 delivers optimal balance of AEC-Q101 compliance, DPAK mountability, and 22 mΩ/21 nC performance-making it preferred for automotive and compact industrial converters where qualification, size, and mid-range efficiency are jointly critical.
Availability
DMT10H025LK3-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC buck converters, and LCD backlight LED drivers requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for DMT10H025LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-reliability power conversion in automotive, industrial, and computing applications-emphasizing ruggedness, thermal efficiency, and qualification compliance.
FAQ
What is the maximum safe operating junction temperature for DMT10H025LK3-13?
The device is rated for TJ = –55°C to +150°C. Maximum continuous operation occurs at 150°C, validated by AEC-Q101 thermal cycling and high-temperature reverse bias tests. Derating begins above 125°C ambient when using standard FR-4 with 2 oz copper and minimum pad layout.
Can DMT10H025LK3-13 be used in a high-side configuration with bootstrap gate drive?
Yes-it supports high-side switching with bootstrap gate drivers. Its VGS rating of ±20V and threshold voltage range (1–3 V) ensure reliable turn-on at 12V gate drive, and its 100V BVDSS provides margin against bootstrap overshoot in 48V systems.
Is the exposed drain pad electrically connected to the drain terminal?
Yes-the large exposed metal pad on the bottom of the TO252 package is internally connected to the drain (Pin 3). It must be soldered to a PCB copper pour for both thermal dissipation and electrical continuity; no isolation is required or provided.
Does DMT10H025LK3-13 require gate resistors for EMI control in 250 kHz switching applications?
A series gate resistor of 2.2–4.7 Ω is recommended to damp ringing caused by parasitic inductance and Crss interaction. This value balances EMI suppression with acceptable turn-on delay (tD(ON) = 6.3 ns) and does not compromise UIS robustness.
DMT10H025LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 47.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1477 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMT10H025LK3-13 FAQ
1.How can I place an order for DMT10H025LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H025LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H025LK3-13 reliable?
The price and inventory of DMT10H025LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H025LK3-13 is usually 5 days.
3.What payment methods are accepted for DMT10H025LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H025LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H025LK3-13?
DMT10H025LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H025LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H025LK3-13?
For technical support, including DMT10H025LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H025LK3-13 requirements.
6.How does Aetrix verify that DMT10H025LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H025LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H025LK3-13 meets industry standards.
7.What is the process for return or replacement of DMT10H025LK3-13?
All DMT10H025LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H025LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H025LK3-13 part is unused and in its original packaging.
Return procedure for DMT10H025LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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