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Diodes Incorporated DMT10H025LSS-13
- Part No.:
- DMT10H025LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT10H025LSS-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V SO-8 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:5,149
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Product details
Overview
DMT10H025LSS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power conversion with RDS(ON) = 25 mΩ @ VGS = 10 V, ID = 7.1 A, and fast switching (tF = 6.9 ns). It serves as a primary or synchronous rectifier switch in DC-DC converters operating up to 1 MHz.
For engineers reviewing the DMT10H025LSS datasheet, DMT10H025LSS pinout, DMT10H025LSS application, or DMT10H025LSS equivalent, key selection criteria include low gate charge (Qg = 22.9 nC), robust avalanche rating (EAS = 11.5 mJ), body diode recovery performance (tRR = 38.2 ns), and thermal resistance (RθJA = 65.7 °C/W on 1-in² copper).
Technical Context
This MOSFET employs planar trench-gate technology to balance low RDS(ON) and controlled gate charge. Its 100% unclamped inductive switching (UIS) rating ensures reliability under hard-switching transients in buck and flyback topologies.
The device features low Ciss (1639 pF) and Crss (13 pF) at VDS = 50 V, enabling stable operation with minimal Miller-induced shoot-through risk. Body diode VSD = 0.9–1.2 V at IS = 20 A supports efficient synchronous rectification without external Schottky replacement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands input voltage surges up to 100 V in 48 V industrial or automotive DC-DC stages. |
| RDS(ON) | 25 mΩ @ VGS = 10 V - Delivers ≤1.26 W conduction loss at 7.1 A, critical for thermally constrained PCB layouts. |
| Qg | 22.9 nC - Enables efficient gate drive with <1.5 W driver power at 1 MHz switching in high-frequency converters. |
| tF | 6.9 ns - Reduces switching transition time, lowering overlap losses in synchronous rectifiers. |
| EAS | 11.5 mJ - Supports reliable operation under 0.3 mH inductive load transients without derating. |
| tRR | 38.2 ns - Limits reverse recovery ringing and EMI in high-side synchronous rectification. |
| RθJC | 9.7 °C/W - Allows direct heatsinking via exposed drain pads in SO-8, supporting >12 W continuous dissipation at TC = 25 °C. |
Pinout & Package
Package: SO-8 surface-mount plastic package with exposed drain pad (pin 1–4 and 6–8 are drains; pin 5 is source; pin 6 is gate). Molded compound meets UL 94V-0 and RoHS 3 / "Green" requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Internally paralleled drain terminals reduce current density and improve thermal spreading across PCB copper. |
| 5 | Source (S) | Single-source terminal provides low-inductance return path for synchronous FET current sensing and gate drive reference. |
| 6 | Gate (G) | Shared pin with Drain 6 - requires careful PCB layout to avoid gate-drain coupling; gate signal routed separately from power traces. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS rated | Withstands 8.8 A avalanche current and 11.5 mJ single-pulse energy without parameter shift or failure - eliminates need for external snubbers in flyback clamp circuits. |
| Low Qgd/Qgs ratio | Qgd = 6.5 nC, Qgs = 5.6 nC - improves hard-switching immunity and reduces Miller plateau duration during turn-off. |
| Enhanced body diode | VSD = 0.9 V typ @ IS = 20 A - lowers forward conduction loss vs. discrete Schottky in 12–48 V output rails. |
| Thermal optimization | RθJC = 9.7 °C/W - enables direct thermal interface to inner-layer copper or external heatsink via exposed drain pad. |
Applications
| High-Frequency DC-DC Converter | Synchronous Rectifier |
|---|---|
Use Scenario: 48 V to 12 V step-down converter operating at 500 kHz–1 MHz in telecom power shelves. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling duty cycle and regulating output voltage. Use Value: Low RDS(ON) and fast tF minimize total power loss (<1.8 W at full load), improving system efficiency to >95%. |
Use Scenario: Secondary-side rectification in isolated 24 V output LLC resonant converter. IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing Schottky diode to reduce conduction loss. Use Value: Body diode tRR = 38.2 ns and low VSD enable clean zero-voltage switching transitions, cutting output ripple by 30%. |
| Industrial Motor Drive Half-Bridge | Automotive LED Driver |
Use Scenario: 24 V BLDC motor gate driver stage with PWM frequency ≥20 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving gate of high-side N-channel MOSFET. Use Value: Fast tR = 7 ns and low Ciss ensure precise gate timing alignment, preventing shoot-through during commutation. |
Use Scenario: Constant-current LED string driver in vehicle cabin lighting (12 V input, 3–5 A output). IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness at 1–5 kHz. Use Value: RDS(ON) stability over -40°C to +125°C (±15% variation) maintains consistent LED current across ambient extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H025LSS-7 | Same die, identical electrical specs, but packaged in 3,000-piece tape-and-reel (vs. 2,500 for -13); no functional difference. | No application impact - interchangeable in all designs using SO-8 footprint. | Select -7 only if volume procurement aligns with 3k reel standard; otherwise -13 preferred for flexibility. |
| DMTH10H025LWQ-13 | AEC-Q101 qualified, same RDS(ON) and Qg, but higher RθJA (75 °C/W) due to wettable flank package. | Required for automotive under-hood applications where PPAP and IATF 16949 traceability are mandatory. | Choose this part only when automotive qualification is contractually required; not needed for industrial or telecom use. |
Compared with DMT10H025LSS, the -7 variant offers identical performance with different packaging quantity, while DMTH10H025LWQ-13 adds automotive qualification at minor thermal cost - neither replaces the base part unless volume logistics or AEC compliance drive the decision.
Availability
DMT10H025LSS is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, synchronous rectifiers, and industrial motor drive half-bridges requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMT10H025LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-frequency power conversion in industrial, computing, and communications infrastructure - emphasizing low RDS(ON), fast switching, and ruggedness.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT10H025LSS supports 5.7 A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad area). This rating assumes no forced airflow and accounts for RDS(ON) increase with junction temperature - actual current must be validated against thermal design margin.
Is the SO-8 package lead-free and halogen-free?
Yes. The DMT10H025LSS uses matte tin annealed over copper leadframe and green molding compound compliant with EU RoHS 2015/863/EU (RoHS 3), containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony - certified as "Halogen and Antimony Free" per Diodes' definitions.
Can this MOSFET replace a Schottky diode in synchronous rectification?
Yes - its integrated body diode has VSD = 0.9–1.2 V at 20 A and tRR = 38.2 ns, enabling lower forward loss than typical 45 V Schottky diodes in 12–24 V output rails. Gate drive must be synchronized to prevent reverse conduction during dead-time.
What is the safe operating area (SOA) limitation at 100 µs pulse width?
At 100 µs pulse width and TC = 25°C, the SOA curve limits drain current to ~25 A at VDS = 20 V. This is governed by RDS(ON) conduction limit, not thermal or avalanche constraints - design must ensure gate drive delivers full enhancement before pulse onset.
DMT10H025LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1639 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta), 12.9W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT10H025LSS-13 FAQ
1.How can I place an order for DMT10H025LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H025LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H025LSS-13 reliable?
The price and inventory of DMT10H025LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H025LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT10H025LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H025LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H025LSS-13?
DMT10H025LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H025LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H025LSS-13?
For technical support, including DMT10H025LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H025LSS-13 requirements.
6.How does Aetrix verify that DMT10H025LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H025LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H025LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT10H025LSS-13?
All DMT10H025LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H025LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H025LSS-13 part is unused and in its original packaging.
Return procedure for DMT10H025LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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