Diodes Incorporated DMT10H032LDV-13

Overview

DMT10H032LDV-13 from Diodes Incorporated is a dual 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring R_DS(ON) = 36 mΩ @ V_GS = 10 V, 18 A continuous drain current at T_C = +25°C, and 100% production-tested UIS robustness-used in high-efficiency power management and analog switching circuits.

For engineers reviewing the DMT10H032LDV-13 datasheet, DMT10H032LDV-13 pinout, DMT10H032LDV-13 application, or DMT10H032LDV-13 equivalent, key selection criteria include dual-channel R_DS(ON) matching, 4.5 V logic-level gate drive capability, thermal resistance (R_θJC = 6.6°C/W), and PowerDI3333-8 footprint compatibility with high-density PCB layouts.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single PowerDI3333-8 thermally enhanced package, enabling synchronous rectification and half-bridge configurations without external isolation. Its low C_iss (683 pF) and fast switching (t_r = 4.5 ns, t_f = 9.3 ns) support high-frequency DC-DC conversion up to 1 MHz.

The device operates across –55°C to +150°C junction temperature, with V_GS(TH) tightly distributed (1.3–2.5 V), ensuring stable turn-on under wide supply and temperature variation. Body diode recovery (t_RR = 31.5 ns, Q_RR = 94.6 nC) is optimized for reduced switching loss in buck and OR-ing applications.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin–annealed terminals, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMT10H032LDV-13, the DMT10H032LSD-13 sacrifices thermal performance for board-level compatibility, while the DMN3022LSD-13 trades voltage robustness for ultra-low on-resistance-neither offers equivalent 100 V UIS-rated dual-channel capability in PowerDI3333-8.

Availability

DMT10H032LDV-13 is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, USB-C power delivery switches, and industrial analog multiplexers requiring stable component supply, consistent parametric binning, and long-term manufacturing continuity.

Supply support for DMT10H032LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The PowerDI® MOSFET product line targets high-density power conversion and signal switching applications, emphasizing thermally efficient packaging, production-tested ruggedness, and AEC-Q101 qualification readiness for automotive-grade reliability.

FAQ

What is the maximum continuous drain current per channel at T_C = +70°C?

The DMT10H032LDV-13 supports 15 A continuous drain current per channel at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package and must be validated against actual board layout and airflow conditions using the provided R_θJC = 6.6°C/W and transient thermal impedance curves.

Does this device have integrated ESD protection on gate terminals?

No, the DMT10H032LDV-13 does not include on-chip ESD protection diodes. Its gate oxide is rated for ±20 V V_GS, and external gate resistors (typically 10–100 Ω) and TVS clamps are recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2.

Can both channels be paralleled to increase current capacity?

Paralleling channels is not recommended. Although electrically isolated, the two die share a common thermal path through the exposed drain pad, causing thermal runaway risk under mismatched gate drive or layout asymmetry. For higher current, use a single-channel part with appropriate R_DS(ON) and thermal design.

Is the PowerDI3333-8 package compatible with standard reflow profiles for lead-free soldering?

Yes-the PowerDI3333-8 package is qualified for lead-free reflow per JEDEC J-STD-020, with Moisture Sensitivity Level 1. Recommended peak temperature is 260°C for ≤60 seconds, and the matte tin–annealed terminals meet MIL-STD-202 Method 208 solderability requirements without pre-baking.