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Diodes Incorporated DMT10H032LDV-7
- Part No.:
- DMT10H032LDV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT10H032LDV-7.pdf
- Description:
- MOSFET 2N-CH 100V 18A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:5,514
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Product details
Overview
DMT10H032LDV-7 from Diodes Incorporated is a dual 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 36 mΩ RDS(ON) @ VGS = 10 V, 18 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness - deployed in high-efficiency DC-DC converters and load-switching circuits.
For engineers reviewing the DMT10H032LDV-7 datasheet, DMT10H032LDV-7 pinout, DMT10H032LDV-7 application, or DMT10H032LDV-7 equivalent, key selection criteria include its dual-channel layout, low gate charge (11.9 nC @ VGS = 10 V), fast switching (tF = 9.3 ns), thermal resistance (RθJC = 6.6 °C/W), and AEC-Q101 readiness for automotive power management.
Technical Context
This dual N-channel MOSFET integrates two independent 100 V, 18 A switches sharing a common exposed drain pad for thermal efficiency. Its gate threshold voltage (1.3–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, while low Ciss (683 pF) and Crss (6.9 pF) support high-frequency operation up to 1 MHz.
The device uses trench-gate technology to achieve low RDS(ON) without sacrificing switching speed or avalanche ruggedness. Its 25.3 mJ EAS rating and 13 A IAS ensure reliable unclamped inductive switching in synchronous buck stages and motor gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports input rails up to 48 V nominal with ≥2× safety margin in industrial power supplies. |
| RDS(ON) | 36 mΩ @ VGS = 10 V - Delivers <0.65 W conduction loss at 10 A, enabling compact thermal design. |
| ID (max) | 18 A @ TC = +25°C - Sustains full-load current in high-density 12 V/24 V DC-DC modules. |
| Qg | 11.9 nC @ VGS = 10 V - Reduces gate driver power demand and switching transition time in 500 kHz–1 MHz converters. |
| EAS | 25.3 mJ - Guarantees single-pulse energy handling in 0.3 mH inductive loads without failure. |
| RθJC | 6.6 °C/W - Enables direct heatsinking via exposed drain pad, critical for >2 W dissipation in space-constrained layouts. |
| tF | 9.3 ns - Limits cross-conduction losses in synchronous rectification and half-bridge topologies. |
Pinout & Package
Package: PowerDI®3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad. Molded green compound, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain 1 | High-current output node for Channel 1; electrically tied to exposed drain pad for thermal conduction. |
| S1 | Source 1 | Reference node for Channel 1; isolated from S2 to support independent high-side/low-side configurations. |
| G1 | Gate 1 | Control input for Channel 1; low input capacitance (Ciss = 683 pF) minimizes driver loading. |
| D2 | Drain 2 | Drain node for Channel 2; shares same thermal pad as D1 but electrically isolated. |
| S2 | Source 2 | Reference node for Channel 2; supports dual independent switch or complementary half-bridge use. |
| G2 | Gate 2 | Independent control input for Channel 2; matched timing ensures synchronized switching when driven together. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Every unit validated for 25.3 mJ avalanche energy - eliminates field failures in inductive load switching. |
| Low RDS(ON) / Qg ratio | 36 mΩ / 11.9 nC = 3.02 Ω·nC - balances conduction and switching loss for optimal efficiency at 500 kHz. |
| Thermally optimized package | RθJC = 6.6 °C/W - allows >2.4 W steady-state dissipation with minimal PCB copper area. |
| Automotive-grade reliability | Qualified per AEC-Q101; halogen/antimony-free "Green" construction meets IATF 16949 manufacturing standards. |
| Fast body diode | tRR = 31.5 ns, QRR = 94.6 nC - reduces reverse recovery loss in synchronous rectifier and flyback applications. |
Applications
| DC-DC Converter Primary Switch | Automotive Load Switch |
|---|---|
|
Use Scenario: High-efficiency 12 V to 1.2 V synchronous buck converter in ADAS domain controller. IC Role / Device Role / Timing Role: Dual-channel N-MOSFET used as high-side and low-side switches; operates at 1 MHz with 50% duty cycle. Use Value: 36 mΩ RDS(ON) and 9.3 ns tF reduce total power loss to <1.2 W at 15 A output, enabling fanless thermal design. |
Use Scenario: 24 V battery-powered infotainment system with controlled power sequencing. IC Role / Device Role / Timing Role: Dual MOSFET configured as independent load switches for display backlight and audio amplifier rails. Use Value: Independent gate control (G1/G2) and low leakage (<1 μA IDSS) prevent standby current creep, extending vehicle sleep mode duration. |
| Industrial Motor Gate Driver | Hot-Swap Controller |
|
Use Scenario: 24 V BLDC motor driver in factory automation actuator. IC Role / Device Role / Timing Role: Used in three-phase half-bridge leg (one DMT10H032LDV-7 per leg) with bootstrap gate drive. Use Value: 100% UIS qualification ensures survival during motor stall events; 13 A IAS withstands 0.3 mH inductive kickback without derating. |
Use Scenario: 48 V telecom board hot-swap circuit with inrush current limiting. IC Role / Device Role / Timing Role: Configured as linear regulator-controlled pass element with external current sense and slew-rate control. Use Value: Low VGS(TH) (1.3–2.5 V) enables precise analog gate biasing; 50 mΩ RDS(ON) @ 4.5 V supports accurate current regulation down to 3.3 V logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H032LSDQ-7 | Same die, PowerDI5060-8 package; RθJC = 3.5 °C/W, higher ID = 22 A @ TC = +25°C. | Better thermal performance for >3 W continuous dissipation; larger footprint (5.0 × 6.0 mm vs. 3.3 × 3.3 mm). | Select when board space permits and junction temperature must stay <125°C under 20 A load. |
| DMN3020LSD-13 | 30 V VDSS, 20 mΩ @ 10 V, 13 A; PowerDI5060-8; no UIS testing specified. | Limited to ≤12 V systems; lacks production UIS validation and automotive qualification. | Choose only for cost-sensitive, non-automotive 5–12 V applications where avalanche stress is absent. |
Compared with DMT10H032LDV-7, DMT10H032LSDQ-7 offers superior thermal capability in larger form factor, while DMN3020LSD-13 trades voltage rating and ruggedness for lower on-resistance in low-voltage consumer designs - neither matches the 100 V / UIS / AEC-Q101 combination of the original.
Availability
DMT10H032LDV-7 is available at Aetrix Electronics and suitable for automotive power distribution, industrial DC-DC conversion, and telecom hot-swap circuits requiring stable component supply across multi-year production cycles.
Supply support for DMT10H032LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-reliability power switching in automotive, industrial, and communications infrastructure - emphasizing avalanche ruggedness, thermal efficiency, and AEC-Q101 compliance.
FAQ
What is the maximum continuous drain current for each channel at TC = +70°C?
Each channel supports 15 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package and ensures safe operation within the 150°C maximum junction temperature rating.
Does DMT10H032LDV-7 support logic-level gate drive?
Yes - its gate threshold voltage range (1.3–2.5 V) and guaranteed RDS(ON) of 50 mΩ at VGS = 4.5 V enable reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO outputs, without requiring dedicated level-shifting circuitry.
Is the exposed drain pad electrically connected between D1 and D2?
Yes - both D1 and D2 terminals are internally connected to the same exposed copper drain pad on the underside of the PowerDI3333-8 package. This provides shared thermal path and requires a single large copper pour for heatsinking, but mandates isolation of source terminals (S1/S2) in circuit layout.
What does "100% UIS tested" mean for design reliability?
Every production unit undergoes unclamped inductive switching stress test at 13 A and 25.3 mJ - verifying avalanche capability beyond typical datasheet limits. This eliminates infant mortality in inductive load applications like motor drives and relay coils, reducing need for external snubbers or overdesign.
DMT10H032LDV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 683pF @ 50V
- Power - Max:
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT10H032LDV-7 FAQ
1.How can I place an order for DMT10H032LDV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H032LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H032LDV-7 reliable?
The price and inventory of DMT10H032LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H032LDV-7 is usually 5 days.
3.What payment methods are accepted for DMT10H032LDV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H032LDV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H032LDV-7?
DMT10H032LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H032LDV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H032LDV-7?
For technical support, including DMT10H032LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H032LDV-7 requirements.
6.How does Aetrix verify that DMT10H032LDV-7 is sourced from the original manufacturer or authorized distributors?
All DMT10H032LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H032LDV-7 meets industry standards.
7.What is the process for return or replacement of DMT10H032LDV-7?
All DMT10H032LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H032LDV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H032LDV-7 part is unused and in its original packaging.
Return procedure for DMT10H032LDV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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