Diodes Incorporated DMT10H032LFDF-13

Overview

DMT10H032LFDF-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 32mΩ R_DS(ON) at V_GS = 10V and 6A continuous drain current at T_A = +25°C. It features 100% production-tested UIS robustness, 0.6mm profile, and 4mm² PCB footprint-optimized for space-constrained power switches in battery-operated systems and solid-state relays.

For engineers reviewing the DMT10H032LFDF-13 datasheet, DMT10H032LFDF-13 pinout, DMT10H032LFDF-13 application, or DMT10H032LFDF-13 equivalent, key selection criteria include its low R_DS(ON) at 4.5V (46mΩ), 1.3W power dissipation on FR-4 with minimum pad layout, and validated avalanche energy (E_AS = 25.3mJ) for inductive load switching reliability.

Technical Context

This MOSFET employs trench-gate silicon technology to simultaneously reduce R_DS(ON) and gate charge (Q_g = 11.9nC at V_GS = 10V), enabling high-efficiency synchronous rectification and load switching. Its 9.2°C/W R_θJC and 75.2°C/W R_θJA (with 1-inch copper plate) support thermally demanding layouts.

The device integrates a low-V_SD body diode (0.8–1.0V at I_S = 6A) with t_RR = 31.5ns and Q_RR = 94.6nC, suitable for freewheeling paths in DC-DC converters and motor drivers where reverse recovery behavior impacts efficiency and EMI.

Key Specifications

Pinout & Package

Package: U-DFN2020-6 (Type F), 2.0mm × 2.0mm × 0.6mm, molded plastic with NiPdAu-plated terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMT10H032LFDF-13, the DMT10H032LFG-7 offers identical electrical performance but differs in solderability profile, while DMTH10H032LPSQ-13 adds automotive qualification overhead and marginal gate charge increase-making the original part optimal for industrial and portable power switching where cost and thermal efficiency are prioritized.

Availability

DMT10H032LFDF-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, and DC-DC synchronous rectifiers requiring stable component supply across design-in, prototyping, and volume production phases.

Supply support for DMT10H032LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified facilities compliant with ISO 9001 and IATF 16949.

This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-footprint power switching in portable, industrial, and automotive applications where R_DS(ON), thermal performance, and reliability under transient stress are critical.

FAQ

What is the maximum safe operating junction temperature for DMT10H032LFDF-13?

The absolute maximum junction temperature is +150°C, and the device is characterized across −55°C to +150°C. Thermal design must ensure T_J remains below this limit under worst-case power dissipation (1.3W on FR-4, 1.6W with 1-inch copper). Derating curves in Figure 12 confirm safe operation up to 5A at +70°C ambient with proper PCB copper area.

Does DMT10H032LFDF-13 require a gate resistor for reliable switching?

A gate resistor is recommended to control dV/dt and suppress ringing, especially in high-di/dt applications. With Q_g = 11.9nC and typical gate driver output impedance (~3Ω), a 5–10Ω series resistor optimizes turn-on time (~10ns) while limiting peak gate current to <1A and preventing oscillation on the 0.6mm-profile package's parasitic inductance.

Can DMT10H032LFDF-13 be used in high-frequency PWM applications above 500kHz?

Yes-its 683pF C_iss, 165pF C_oss, and 6.9pF Crss support efficient operation up to 1MHz in hard-switched topologies. However, total switching loss (E_SW) increases above 500kHz due to Q_gd-dominated Miller plateau; thermal validation using Figure 13's transient R_θJA(t) is required for duty cycles <10%.

Is the exposed thermal pad on the U-DFN2020-6 package electrically connected to any internal node?

Yes-the exposed pad is internally connected to the drain (D) terminals (pins 3, 5, and 6). It must be soldered to a PCB copper pour tied to the drain net for both thermal conduction and electrical integrity; floating or grounding the pad will cause catastrophic failure during avalanche events or high-current operation.