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Diodes Incorporated DMT10H032LFVW-13

Part No.:
DMT10H032LFVW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT10H032LFVW-13.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,017

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Product details

Overview

DMT10H032LFVW-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 32 mΩ RDS(ON) @ VGS = 10 V, 17 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness-designed for high-efficiency DC-DC converters in backlighting and power management systems.

For engineers reviewing the DMT10H032LFVW-13 datasheet, DMT10H032LFVW-13 pinout, DMT10H032LFVW-13 application, or DMT10H032LFVW-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 8.9°C/W RθJC, 13 A ID at TC = +70°C, and 25.3 mJ EAS avalanche energy rating.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining fast switching with 11.9 nC total gate charge (VGS = 10 V) and 31.5 ns reverse recovery time. Its 100V BVDSS and ±20V VGSS support mid-voltage industrial and automotive power rails.

The device features a thermally enhanced PowerDI3333-8 package with exposed drain pad, enabling 2.5 W power dissipation on 2 oz copper PCBs and 49°C/W RθJA under optimized layout-critical for compact, high-density DC-DC converter designs requiring reliable thermal performance.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Supports input rails up to 80 V DC with margin for transients in buck converters.
RDS(ON) 32 mΩ @ VGS = 10 V - Enables <1.7 W conduction loss at 10 A, critical for >90% efficiency targets.
ID (TC = +25°C) 17 A - Sustains peak load currents in 12–48 V industrial power supplies without derating.
EAS 25.3 mJ - Withstands repetitive inductive switching events in synchronous rectifier and motor drive stages.
RθJC 8.9°C/W - Allows direct thermal coupling to heatsink or copper plane for junction temperature control below 125°C.
Qg (VGS = 10 V) 11.9 nC - Matches standard gate drivers (e.g., UCC27531) without excessive Miller plateau duration.
tRR 31.5 ns - Minimizes body diode conduction loss during dead-time in synchronous buck topologies.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for AOI compatibility.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 (Top-side D) Drain Four parallel drain terminals connected to internal die drain metallization and exposed thermal pad-primary heat path and high-current return node.
5 (Top-side G) Gate Single gate input with 1.2 Ω intrinsic gate resistance-compatible with 3.3 V/5 V logic-level drivers without external series resistor.
6, 7, 8 (Top-side S) Source Three-source terminals tied to source metallization-provides low-inductance return path for switching current and gate loop closure.

Key Features

Feature Design Value
100% UIS tested in production Guarantees minimum 13 A avalanche current and 25.3 mJ energy handling per pulse-eliminates need for external snubbers in flyback or boost converters.
Wettable flank leads Enables automated optical inspection of solder fillet integrity on all four side terminals-reduces post-reflow defect escapes in high-volume manufacturing.
PowerDI3333-8 thermal design Delivers 2.5 W power dissipation on FR-4 with 2 oz copper and thermal bias-supports 15–20 A peak loads in space-constrained 12 mm² footprint.
Lead-free & halogen-free Meets RoHS 3 (2015/863/EU) and "Green" definition (<900 ppm Br+Cl, <1000 ppm Sb)-compliant for automotive and medical end equipment.

Applications

LED Backlight Driver Industrial DC-DC Converter

Use Scenario: High-side switch in boost LED driver for LCD panel backlighting, operating at 100 kHz with 12 V input and 40 V output.

IC Role / Device Role / Timing Role: Main power switch controlling inductor current; handles 10 A peak drain current with minimal conduction loss.

Use Value: 32 mΩ RDS(ON) reduces I²R loss by 35% vs. comparable 50 mΩ MOSFETs, improving thermal margin and enabling smaller heatsinks.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V forward converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated at 200 kHz with 13 A RMS current.

Use Value: 31.5 ns tRR and 0.8 V VSD minimize reverse recovery loss and forward drop-increasing efficiency by 1.2% at full load.

Automotive Body Control Module USB-C PD Power Path

Use Scenario: Load switch for 24 V HVAC blower motor control in AEC-Q101–qualified BCMs.

IC Role / Device Role / Timing Role: High-reliability power FET with 100% UIS screening-handles inductive kickback during PWM shutdown.

Use Value: 25.3 mJ EAS withstands ≥10⁵ unclamped inductive cycles-extends field life beyond 15 years in automotive environments.

Use Scenario: Input protection switch in 100 W USB-C PD sink, managing hot-plug surges and overcurrent events.

IC Role / Device Role / Timing Role: Fast-turnoff load switch with 12.5 ns tD(OFF)-enables sub-10 µs fault response for IEC 62368-1 compliance.

Use Value: 1.3–2.5 W power rating supports 5–20 V input range with 100% duty-cycle capability-eliminates need for external thermal monitoring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT10H032LPSQ-13 Same die, PowerDI5060-8 package; RθJA = 40°C/W (vs. 49°C/W); 3.5× larger footprint. Better thermal performance but requires 2.5× more PCB area-suitable only when board space permits. Select for higher ambient temperature operation (>85°C) where thermal headroom outweighs size constraints.
DMTH10H032LPSQ-13 AEC-Q101 qualified; identical RDS(ON) and Qg, but 100% HTRB and temperature cycling tested. Required for automotive safety-critical modules; not necessary for industrial or consumer power supplies. Choose only when AEC-Q101 certification and PPAP documentation are mandatory for the end application.

Compared with DMT10H032LFVW-13, the PowerDI5060 variant trades compactness for thermal headroom, while the AEC-Q101 version adds qualification overhead without electrical benefit-making the original optimal for cost-sensitive, space-constrained industrial DC-DC designs.

Availability

DMT10H032LFVW-13 is available at Aetrix Electronics and suitable for LED backlight drivers, industrial DC-DC converters, and USB-C PD power path management requiring stable component supply, consistent parametric performance, and long-term lifecycle continuity.

Supply support for DMT10H032LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

This MOSFET belongs to Diodes' PowerFET™ portfolio, engineered specifically for high-efficiency, high-density power conversion in industrial, computing, and consumer electronics-emphasizing low RDS(ON), robust avalanche capability, and manufacturable packaging.

FAQ

What is the maximum continuous drain current at TC = +70°C?

The DMT10H032LFVW-13 supports 13 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package under typical PCB mounting conditions with 2 oz copper thermal bias.

Does this MOSFET require a gate resistor for 5 V logic-level driving?

No external gate resistor is required for standard 5 V CMOS drivers due to its 1.2 Ω intrinsic gate resistance and 11.9 nC total gate charge. However, a 5–10 Ω series resistor is recommended to dampen ringing in high-dI/dt layouts with >10 cm gate trace length.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-the device is rated for Moisture Sensitivity Level 1 per J-STD-020 and supports standard lead-free reflow profiles (peak 260°C, 60 sec max). The matte tin finish ensures solderability per MIL-STD-202, Method 208 without pre-baking.

Can this MOSFET replace a TO-252 DPAK in existing designs?

It can replace TO-252 in space-constrained layouts due to its 3.3 × 3.3 mm footprint (vs. 6.5 × 6.1 mm), but thermal design must be revalidated: PowerDI3333-8 has higher RθJA (49°C/W vs. ~60°C/W for DPAK on same board), requiring optimized copper pour under the exposed drain pad.

DMT10H032LFVW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
32mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
683 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
1.3W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMT10H032LFVW-13 FAQ

1.How can I place an order for DMT10H032LFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H032LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H032LFVW-13 reliable?

The price and inventory of DMT10H032LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H032LFVW-13 is usually 5 days.

3.What payment methods are accepted for DMT10H032LFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H032LFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H032LFVW-13?

DMT10H032LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H032LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H032LFVW-13?

For technical support, including DMT10H032LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H032LFVW-13 requirements.

6.How does Aetrix verify that DMT10H032LFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H032LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H032LFVW-13 meets industry standards.

7.What is the process for return or replacement of DMT10H032LFVW-13?

All DMT10H032LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H032LFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H032LFVW-13 part is unused and in its original packaging.

Return procedure for DMT10H032LFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT10H032LFVW-13 Tags

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