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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H032LFVW-7

Name: DMT10H032LFVW-7
Brand: Diodes Incorporated
SKU: DMT10H032LFVW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H032LFVW-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT10H032LFVW-7.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI33

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Product details

Overview

DMT10H032LFVW-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 32 mΩ R_DS(ON) @ V_GS = 10 V, 17 A continuous drain current at T_C = +25°C, and 100% production-tested UIS robustness. It serves as a primary switching element in high-efficiency DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMT10H032LFVW-7 datasheet, DMT10H032LFVW-7 pinout, DMT10H032LFVW-7 application, or DMT10H032LFVW-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, thermally efficient 8.9°C/W R_θJC, and dual R_DS(ON) specs (32 mΩ @ 10 V / 50 mΩ @ 4.5 V) enabling 4.5 V logic-level gate drive compatibility.

Technical Context

This MOSFET employs planar trench-gate technology to balance low conduction loss and fast switching performance. Its 100 V BVDSS rating supports industrial and automotive input rails up to 48 V nominal with margin, while the 25.3 mJ EAS rating ensures reliable operation under inductive load transients.

The device integrates a co-packaged body diode with 0.8–1.0 V forward voltage at 6 A and exhibits Crss = 6.9 pF and Qgd = 3.1 nC - parameters critical for minimizing Miller-induced shoot-through in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V bus systems with ≥2× overvoltage margin for transient suppression.
R_DS(ON)	32 mΩ @ V_GS = 10 V - Enables ≤0.55 W conduction loss at 13 A in high-current power stages.
I_D (continuous)	17 A @ T_C = +25°C - Sustains full-load current in compact thermal layouts with minimal heatsinking.
Q_g	11.9 nC @ V_GS = 10 V - Optimized for <1 MHz PWM switching with standard gate drivers (e.g., TC442x).
R_θJC	8.9°C/W - Allows direct thermal coupling to PCB copper pour or heatsink for junction temperature control.
E_AS	25.3 mJ - Guarantees single-pulse avalanche survivability in unclamped inductive switching events.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Top-side)	Drain (D)	Four parallel drain connections tied to internal die drain metallization and exposed bottom pad - primary heat path and high-current return.
5	Gate (G)	Single gate terminal with 1.2 Ω intrinsic gate resistance - limits dV/dt-induced ringing and simplifies driver layout.
6, 7, 8 (Top-side)	Source (S)	Three-source terminals reduce source inductance and improve current sharing in high-di/dt applications.

Key Features

Feature	Design Value
100% UIS tested	Ensures end-product reliability in DC-DC converter output stage without external snubbers.
Wettable flank leads	Enables AOI verification of solder joint integrity on bottom-side terminations - critical for automotive AEC-Q200 compliance.
PowerDI3333-8 package	Delivers 2.5 W power dissipation on 2 oz copper PCB - 92% higher than SO-8 at same footprint.
Lead-free & halogen-free	Meets RoHS 3 (2015/863/EU) and JEDEC J-STD-020 Level 1 moisture sensitivity - zero bake requirement for SMT assembly.

Applications

LED Backlighting

Industrial DC-DC Converters

Use Scenario: High-side switch in boost-based LCD backlight driver for 12–24 V input systems.

IC Role / Device Role / Timing Role: Primary power switch controlling current through series-connected white LEDs.

Use Value: 32 mΩ R_DS(ON) minimizes power loss at 1–2 A LED current, extending battery life in portable displays.

Use Scenario: Synchronous rectifier in 48 V-to-12 V isolated DC-DC module for factory automation controllers.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward or LLC resonant converter secondary side.

Use Value: 50 mΩ @ 4.5 V enables direct drive from microcontroller GPIOs, eliminating level-shifter components.

Automotive Body Control Modules

USB-C PD Power Delivery

Use Scenario: Load switch for 12 V accessory circuits (e.g., HVAC actuators, mirror heaters) in BCMs.

IC Role / Device Role / Timing Role: High-reliability power distribution switch with integrated avalanche ruggedness.

Use Value: 25.3 mJ EAS rating withstands load dump transients per ISO 7637-2 Pulse 5a without failure.

Use Scenario: Input protection switch in 20 V/5 A USB-C PD sink designs with overvoltage and reverse polarity protection.

IC Role / Device Role / Timing Role: Reverse-blocking, hot-swap capable power path controller.

Use Value: 100 V rating accommodates 20 V PD bus plus ±10 V surge margin; wettable flanks ensure IPC-A-610 Class 3 solder joint acceptance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH10H032LPSQ-13	AEC-Q101 qualified, identical R_DS(ON) and package, but rated for TJ = −40°C to +175°C.	Required for under-hood automotive applications with extended temperature range.	Select when AEC-Q101 qualification and 175°C max junction temperature are mandatory.
SiR870DP-T1-GE3	100 V, 3.2 mΩ @ 10 V, PowerPAK® 1212-8 package, 4× lower R_DS(ON) but 3× larger footprint and no wettable flanks.	Better efficiency in space-tolerant server PSUs; unsuitable for AOI-dependent automotive lines.	Choose only if ultra-low conduction loss outweighs AOI requirements and board area constraints.

Compared with DMT10H032LFVW-7, DMTH10H032LPSQ-13 adds automotive qualification without trade-offs in electrical specs, while SiR870DP-T1-GE3 sacrifices manufacturability and form factor for lower R_DS(ON) - making DMT10H032LFVW-7 optimal for cost-sensitive, AOI-driven industrial and consumer power designs.

Availability

DMT10H032LFVW-7 is available at Aetrix Electronics and suitable for LED backlighting, industrial DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for DMT10H032LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained industrial and automotive applications - emphasizing ruggedness, thermal performance, and process consistency.

FAQ

What is the maximum safe operating temperature for DMT10H032LFVW-7?

The device has a specified operating junction temperature range of −55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and thermal design must ensure this limit is not exceeded under worst-case ambient and power dissipation conditions - verified using R_θJC = 8.9°C/W and PCB copper thermal mass per the recommended pad layout.

Does DMT10H032LFVW-7 support 4.5 V logic-level gate drive?

Yes - it delivers 50 mΩ R_DS(ON) at V_GS = 4.5 V and ID = 5 A, confirmed in the Electrical Characteristics table. This enables direct interface with 5 V or 3.3 V microcontrollers and gate drivers without level-shifting circuitry.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes - it meets JEDEC J-STD-020 Level 1 moisture sensitivity and is rated for peak reflow temperatures up to 260°C. The matte tin annealed finish ensures solderability per MIL-STD-202, Method 208, and the wettable flanks support post-reflow AOI inspection.

How does the 100% UIS testing benefit system design?

Every unit undergoes unclamped inductive switching stress during production, verifying minimum 25.3 mJ avalanche energy capability. This eliminates need for external snubbers or derating in DC-DC converter output stages, reducing BOM count and improving power density.

DMT10H032LFVW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 683 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT10H032LFVW-7 FAQ

1.How can I place an order for DMT10H032LFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H032LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H032LFVW-7 reliable?

The price and inventory of DMT10H032LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H032LFVW-7 is usually 5 days.

3.What payment methods are accepted for DMT10H032LFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H032LFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H032LFVW-7?

DMT10H032LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H032LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H032LFVW-7?

For technical support, including DMT10H032LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H032LFVW-7 requirements.

6.How does Aetrix verify that DMT10H032LFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMT10H032LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H032LFVW-7 meets industry standards.

7.What is the process for return or replacement of DMT10H032LFVW-7?

All DMT10H032LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H032LFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H032LFVW-7 part is unused and in its original packaging.

Return procedure for DMT10H032LFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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