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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H032LSS-13

Name: DMT10H032LSS-13
Brand: Diodes Incorporated
SKU: DMT10H032LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H032LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT10H032LSS-13.pdf

Description:: MOSFET BVDSS: 61V~100V SO-8 T&R

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Product details

Overview

DMT10H032LSS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SO-8 package, rated for 5A continuous drain current at 25°C, with R_DS(on) of 32mΩ @ V_GS = 10V and 49mΩ @ V_GS = 4.5V. It delivers fast switching (t_F = 9.3ns), low input capacitance (C_iss = 683pF), and 100% production-tested UIS robustness-optimized for synchronous rectification in DC-DC converters.

For engineers reviewing the DMT10H032LSS datasheet, DMT10H032LSS pinout, DMT10H032LSS application, or DMT10H032LSS equivalent, key selection criteria include its 100V V_DSS, dual-threshold R_DS(on) performance at 4.5V/10V drive, SO-8 thermal resistance (R_θJA = 60°C/W with 1-inch copper), and body diode recovery metrics (Q_RR = 94.6nC, t_RR = 31.5ns).

Technical Context

This MOSFET employs planar trench-gate technology to balance low conduction loss and high-speed switching. Its gate threshold voltage (1.3–2.5V) enables compatibility with 3.3V and 5V logic-level drivers, while the 1.2Ω gate resistance supports controlled turn-on/turn-off transitions without external gate resistors in many designs.

The device integrates a robust intrinsic body diode with 25A continuous forward current rating and 13A avalanche current capability (L = 0.3mH). Its 25.3mJ single-pulse avalanche energy and 100% UIS testing ensure reliability under inductive load transients common in buck converter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - supports 48V bus systems with 2× safety margin against transient overvoltage
R_DS(on) @ 10V	32mΩ max - limits I²R conduction loss to ≤800mW at 5A DC
R_DS(on) @ 4.5V	49mΩ max - enables direct drive from standard 5V PWM controllers without level-shifting
C_iss	683pF - reduces gate drive power requirement and improves high-frequency efficiency
t_RR / Q_RR	31.5ns / 94.6nC - minimizes reverse recovery loss during hard-switched synchronous rectification
R_θJA (with copper)	60°C/W - allows 1.9W dissipation at ≤70°C ambient using standard PCB copper area
E_AS	25.3mJ - withstands repetitive inductive switching events in non-isolated DC-DC topologies

Pinout & Package

Package: SO-8 surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated molding compound, and moisture sensitivity level 3 (per J-STD-020).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±20V bias; 1.2Ω internal gate resistance damps ringing
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch
3 (D)	Drain	Main power output node; connected to inductor or transformer secondary in buck/flyback
4 (D)	Drain	Parallel drain connection for enhanced current handling and thermal spreading
5 (D)	Drain	Parallel drain connection (shared die source); reduces package inductance in high-dI/dt paths
6 (S)	Source	Secondary source tie for Kelvin sensing or reduced source inductance in critical layouts
7 (S)	Source	Additional source connection supporting low-inductance return path for body diode conduction
8 (D)	Drain	Final drain terminal completing 4× drain / 3× source configuration for SO-8 thermal and EMI optimization

Key Features

Feature	Design Value
100% UIS tested	Guarantees 13A/0.3mH avalanche survivability per unit-eliminates field failure from inductive kickback
Low Q_g (11.9nC @ 10V)	Reduces gate driver power loss and enables >1MHz operation with minimal drive strength
Green, halogen-free construction	Meets RoHS 3 (2015/863/EU) and automotive PPAP-ready material compliance without performance trade-offs
SO-8 thermal design	60°C/W R_θJA with 1″² copper enables 1.9W continuous dissipation-no heatsink required in most 5A applications
Body diode optimized t_RR	31.5ns reverse recovery time ensures minimal cross-conduction loss when paired with GaN or SiC primary switches

Applications

Server VRM Synchronous Rectifier

Industrial 48V DC-DC Converter

Use Scenario: High-current, high-efficiency 12V output stage in server voltage regulator modules operating at 500kHz–1MHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated by controller's complementary PWM signal.

Use Value: 32mΩ R_DS(on) cuts conduction loss by >65% vs. 40V Schottky, enabling >95% peak efficiency at 50A load.

Use Scenario: Secondary-side power switch in isolated 48V-to-12V flyback or forward converter for PLC power supplies.

IC Role / Device Role / Timing Role: Main power switch in active-clamp forward topology; handles 100V reflected transients and 4A average current.

Use Value: 100V V_DSS and 25.3mJ E_AS prevent failure during output short-circuit or startup surge events.

Automotive ADAS Power Supply

Telecom Point-of-Load Regulator

Use Scenario: 5V/3A auxiliary rail in radar ECU requiring AEC-Q101-compliant components and extended temperature operation.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter supplying image sensor and SoC core voltage.

Use Value: -55°C to +150°C operating range and 49mΩ R_DS(on) @ 4.5V support direct 5V microcontroller drive and cold-cranking immunity.

Use Scenario: Compact 48V-to-3.3V PoL module in 5G base station RF card with strict EMI and thermal constraints.

IC Role / Device Role / Timing Role: High-frequency (1MHz+) power switch in integrated buck IC companion FET role.

Use Value: 683pF C_iss and 9.3ns t_F enable clean switching edge control and <10mVpp output ripple at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH10H032LPS-13	Same die in PowerDI™ 5060-8 package; R_θJA = 40°C/W (improved thermal performance)	Better suited for higher ambient (>85°C) or higher power density layouts where SO-8 thermal limit is exceeded	Select when board space permits larger footprint and junction temperature must stay <125°C at >6A continuous
DMN10H032LSS-13	Identical SO-8 pinout and R_DS(on), but lower 100% UIS test spec (IAS = 10A vs. 13A)	Approved for cost-sensitive industrial applications where full 13A avalanche margin is not required	Choose for BOM cost reduction where system-level stress analysis confirms 10A UIS suffices

Compared with DMT10H032LSS, DMTH10H032LPS-13 offers superior thermal resistance for higher-power deployments, while DMN10H032LSS trades minor avalanche robustness for lower unit cost-both retain identical gate drive behavior and SO-8-compatible layout.

Availability

DMT10H032LSS is available at Aetrix Electronics and suitable for server VRM synchronous rectifiers, industrial 48V DC-DC converters, and automotive ADAS power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for DMT10H032LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in computing, industrial, and automotive systems where low R_DS(on), fast switching, and rugged avalanche performance are mandatory.

FAQ

What is the maximum safe operating temperature for DMT10H032LSS?

The device supports junction temperatures from –55°C to +150°C. With R_θJA = 60°C/W on a 1-inch² copper pad, it sustains 1.9W continuous power at 70°C ambient-corresponding to T_J ≈ 184°C. Derating is required above 70°C ambient; maximum usable case temperature is 150°C per absolute maximum ratings.

Can DMT10H032LSS be driven directly by a 3.3V microcontroller GPIO?

No-its gate threshold voltage (1.3–2.5V) allows turn-on, but R_DS(on) rises sharply below 4.5V. At 3.3V V_GS, R_DS(on) exceeds 100mΩ, causing excessive conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3V logic interface.

Does this MOSFET require a gate resistor for stability?

Its internal 1.2Ω gate resistance provides moderate damping, but a 5–10Ω external series resistor is recommended to suppress high-frequency oscillation during fast switching, especially in layouts with long gate traces or high parasitic inductance.

Is DMT10H032LSS qualified for automotive use per AEC-Q101?

While manufactured in IATF 16949-certified facilities and fully RoHS/halogen-free, DMT10H032LSS itself is not AEC-Q101 qualified. For automotive applications, Diodes offers the functionally identical AEC-Q101–qualified variant DMTH10H032LPS-13 in PowerDI™ 5060-8 package.

DMT10H032LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 683 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT10H032LSS-13 FAQ

1.How can I place an order for DMT10H032LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H032LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H032LSS-13 reliable?

The price and inventory of DMT10H032LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H032LSS-13 is usually 5 days.

3.What payment methods are accepted for DMT10H032LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H032LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H032LSS-13?

DMT10H032LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H032LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H032LSS-13?

For technical support, including DMT10H032LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H032LSS-13 requirements.

6.How does Aetrix verify that DMT10H032LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H032LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H032LSS-13 meets industry standards.

7.What is the process for return or replacement of DMT10H032LSS-13?

All DMT10H032LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H032LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H032LSS-13 part is unused and in its original packaging.

Return procedure for DMT10H032LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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