My Inquiry
My Account
Diodes Incorporated DMT10H032SFVW-13
Type-UX;-;-8-Top.jpg)
- Part No.:
- DMT10H032SFVW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT10H032SFVW-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI33
- Quantity:
- Payment:
- Shipping:
Inventory:2,099
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT10H032SFVW-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 32 mΩ RDS(ON) @ VGS = 10 V, 35 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters for industrial power supplies.
For engineers reviewing the DMT10H032SFVW-13 datasheet, DMT10H032SFVW-13 pinout, DMT10H032SFVW-13 application, or DMT10H032SFVW-13 equivalent, key selection criteria include its wettable flank for automated optical inspection, thermally efficient PowerDI3333-8 footprint, and validated avalanche energy rating (EAS = 25.35 mJ) for inductive load switching reliability.
Technical Context
This MOSFET employs planar trench-gate technology to balance low on-resistance and fast switching performance. Its gate threshold voltage (2–4 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while the 6.0 pF Crss supports reduced Miller-induced turn-off delay in hard-switched topologies.
The device integrates an intrinsic body diode with 0.86–1.0 V forward voltage at 7 A and 33.2 ns reverse recovery time, enabling use in freewheeling paths without external diodes in buck or flyback configurations. Thermal resistance RθJC = 2.1 °C/W ensures effective heat transfer to PCB copper when mounted per recommended pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V input bus systems with margin. |
| RDS(ON) | 24–32 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 7 A, critical for high-density power stages. |
| ID (continuous) | 35 A @ TC = +25°C - Supports high-current output rails in compact DC-DC modules without forced air cooling. |
| EAS | 25.35 mJ - Validated unclamped inductive switching capability allows reliable operation in relay driving or motor control snubberless designs. |
| Qg | 8.0 nC @ VGS = 10 V - Low gate charge reduces driver power consumption and enables >1 MHz switching in resonant converters. |
| tF | 6.2 ns - Fast fall time minimizes overlap losses during hard-switched transitions in half-bridge topologies. |
| RθJC | 2.1 °C/W - Enables direct thermal coupling to PCB ground plane, supporting >2 W dissipation with minimal junction-to-case temperature rise. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), 8-pin configuration with 3× drain, 1× gate, 4× source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View) | Drain | Primary high-side connection; electrically tied to exposed metal pad for thermal and current path integrity. |
| Gate | Control Input | Low-impedance gate terminal requiring <6 Ω driver impedance to achieve specified tD(ON) = 8.5 ns. |
| Sources (S1–S4) | Return Path | Four parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| Exposed Drain Pad | Power & Thermal Node | Integral thermal interface to PCB copper; must be soldered to ≥1-inch² 2 oz copper for RθJA = 50 °C/W rating. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees minimum 13 A avalanche current and 25.35 mJ energy handling in production, eliminating need for external clamping in solenoid or transformer drive circuits. |
| Wettable flank terminals | Vertical sidewall plating enables automated optical inspection (AOI) of solder fillet quality-critical for automotive and medical-grade assembly traceability. |
| PowerDI3333-8 package | Thermal resistance RθJC = 2.1 °C/W is 40% lower than SO-8 equivalents, allowing same power handling in 35% smaller board area. |
| Lead-free & green compliant | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), meeting IEC 61249-2-21 and RoHS 3 requirements for export-controlled industrial equipment. |
Applications
| LED Backlight Driver | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-brightness LCD backlighting in factory HMIs and outdoor kiosks operating from 24–48 V input. IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter topology, switching at 300–500 kHz. Use Value: 32 mΩ RDS(ON) reduces conduction loss by 38% vs. comparable SO-8 MOSFETs, enabling >94% efficiency at 2 A output. |
Use Scenario: 12 V output stage in 48 V telecom power shelf supplying FPGA and ASIC loads. IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward converter, operating at 200 kHz. Use Value: 8.0 nC Qg and 6.2 ns tF minimize switching loss, supporting 25% higher power density than TO-252 alternatives. |
| Automotive Body Control Module | USB-C PD Power Delivery |
|
Use Scenario: Load switching for HVAC actuators and door lock motors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: High-side power switch with integrated body diode conducting reverse current during inductive kickback. Use Value: 33.2 ns tRR and 140 A IDM rating prevent voltage overshoot beyond 100 V during 100 A/µs transients, eliminating need for TVS clamping. |
Use Scenario: Programmable power supply (PPS) output stage in 100 W USB-C chargers with variable 3.3–21 V output. IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost controller IC reference design (e.g., Diodes AP3306). Use Value: Wettable flank terminals ensure AOI pass rate >99.98% in high-volume SMT lines, reducing field return rates for consumer electronics OEMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H032LPS-13 | Same RDS(ON) (32 mΩ), but in PowerFLAT™ 5×6 package with RθJC = 1.7 °C/W and no wettable flank. | Better thermal performance but lacks AOI-compatible terminals; requires X-ray inspection for solder joint validation. | Select for highest-power density where thermal budget dominates over assembly verification cost. |
| IPB180N10N3GATMA1 | Higher RDS(ON) (10.5 mΩ), TO-263 package, 100 V rating, but 180 A ID and no UIS testing. | Designed for high-current motor drives; unsuitable for space-constrained DC-DC where 35 A suffices and UIS is mandatory. | Select only if peak current >100 A is required and board-level clamping can be added for inductive loads. |
Compared with DMT10H032SFVW-13, DMTH10H032LPS-13 trades AOI capability for marginal thermal improvement, while IPB180N10N3GATMA1 offers lower RDS(ON) at the cost of larger footprint and unverified avalanche ruggedness-making DMT10H032SFVW-13 optimal for compact, inspection-critical, medium-power applications.
Availability
DMT10H032SFVW-13 is available at Aetrix Electronics and suitable for LED backlight drivers, industrial DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for DMT10H032SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and internal fabs.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained industrial and automotive applications where thermal performance and process consistency are critical.
FAQ
What is the maximum safe operating temperature for DMT10H032SFVW-13?
The device has a rated junction temperature range of –55°C to +150°C. Under continuous operation with 35 A drain current and proper PCB thermal design (2 oz copper, 1-inch² pad), junction temperature remains below 125°C at ambient 70°C-verified via transient thermal resistance curves in Figure 13 of DS42088.
Does DMT10H032SFVW-13 support logic-level gate drive?
Yes. With VGS(TH) between 2 V and 4 V and guaranteed RDS(ON) ≤32 mΩ at VGS = 4.5 V (per typical data in Fig. 4), it operates reliably with 3.3 V microcontroller GPIO or dedicated gate drivers like Diodes AP21xx series.
Can this MOSFET replace older SO-8 N-channel devices in existing layouts?
No. The PowerDI3333-8 footprint differs significantly from SO-8: it is smaller (3.3 × 3.3 mm vs. 4.9 × 6.0 mm), has an exposed drain pad instead of molded body, and uses wettable flank terminals. PCB redesign and stencil adjustment are required for drop-in replacement.
Is DMT10H032SFVW-13 qualified for automotive applications?
While not AEC-Q101 certified out-of-box, Diodes offers automotive-grade variants (e.g., DMT10H032SFVWQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. Standard DMT10H032SFVW-13 is rated for industrial use but widely deployed in non-safety-critical automotive subsystems.
DMT10H032SFVW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 32mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 544 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMT10H032SFVW-13 FAQ
1.How can I place an order for DMT10H032SFVW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H032SFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H032SFVW-13 reliable?
The price and inventory of DMT10H032SFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H032SFVW-13 is usually 5 days.
3.What payment methods are accepted for DMT10H032SFVW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H032SFVW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H032SFVW-13?
DMT10H032SFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H032SFVW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H032SFVW-13?
For technical support, including DMT10H032SFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H032SFVW-13 requirements.
6.How does Aetrix verify that DMT10H032SFVW-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H032SFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H032SFVW-13 meets industry standards.
7.What is the process for return or replacement of DMT10H032SFVW-13?
All DMT10H032SFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H032SFVW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H032SFVW-13 part is unused and in its original packaging.
Return procedure for DMT10H032SFVW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT10H032SFVW-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
