Diodes Incorporated DMT10H032SFVW-7

Overview

DMT10H032SFVW-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 32 mΩ R_DS(ON) at V_GS = 10 V, 35 A continuous drain current at T_C = +25°C, and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters for industrial power supplies.

For engineers reviewing the DMT10H032SFVW-7 datasheet, DMT10H032SFVW-7 pinout, DMT10H032SFVW-7 application, or DMT10H032SFVW-7 equivalent, key selection criteria include its 2.1°C/W R_θJC, wettable flank terminals for automated optical inspection, and 140 A pulsed drain rating under 1% duty cycle - critical for transient-heavy power stage design.

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss while maintaining fast switching speed: t_D(ON) = 8.5 ns, t_F = 6.2 ns, and Q_g = 8.0 nC at V_GS = 10 V. Its body diode exhibits V_SD = 0.86 V (typ) at I_S = 7 A and t_RR = 33.2 ns, enabling efficient freewheeling in buck and flyback topologies.

The device operates across –55°C to +150°C junction temperature range with normalized R_DS(ON) variation ≤1.8× over that range. Its PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving R_θJA = 50°C/W on 2 oz copper with thermal bias - essential for compact, convection-cooled designs.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100V power MOSFET applications.

Compared with DMT10H032SFVW-7, DMTH10H032LPS-13 trades AOI support and thermal performance for lower unit cost, while IPB100N10N3 G sacrifices ruggedness and drive simplicity for lower on-resistance - making the DMT10H032SFVW-7 optimal for space-constrained, high-reliability industrial and automotive power stages.

Availability

DMT10H032SFVW-7 is available at Aetrix Electronics and suitable for LED backlight drivers, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and traceable green-compliant sourcing.

Supply support for DMT10H032SFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions, with operations certified to IATF 16949 and ISO 9001 standards.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered for high-density power conversion where thermal efficiency, production test rigor, and automated assembly compatibility are mandatory.

FAQ

What is the maximum safe operating temperature for DMT10H032SFVW-7?

The absolute maximum junction temperature is +150°C, with continuous operation limited by thermal design. At T_C = +70°C, the device supports 28 A continuous drain current. Derating curves in Figure 5 show R_DS(ON) increases to 0.042 Ω at +125°C junction, requiring PCB copper area ≥200 mm² for 2.5 W dissipation in still air.

Does DMT10H032SFVW-7 require a gate resistor for stability?

A 1–5 Ω gate resistor is recommended to dampen high-frequency oscillation caused by PCB trace inductance interacting with the device's 1.2 Ω intrinsic gate resistance and 544 pF C_iss. Without it, ringing exceeding ±30 V overshoot may occur at V_GS edges above 200 kHz, risking gate oxide stress.

Can DMT10H032SFVW-7 be used in linear mode (as a pass transistor)?

No - this MOSFET is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (Figure 12) shows R_DS(ON)-limited boundary only up to 10 µs pulses; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(ON) and lack of SOA derating data beyond 1 ms.

How does the wettable flank feature impact reflow profile requirements?

The wettable flank requires standard lead-free reflow (peak 260°C, 60 s above 217°C), but mandates 10–15% higher solder paste volume on side pads to ensure full fillet formation. IPC-A-610 Class 2 acceptance requires ≥75% side-wall wetting height visible under 10× magnification - verified via AOI with side-view illumination.