My Inquiry
My Account
Diodes Incorporated DMT10H052LFDF-13
- Part No.:
- DMT10H052LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT10H052LFDF-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V U-DFN2020
- Quantity:
- Payment:
- Shipping:
Inventory:5,120
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT10H052LFDF from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 52 mΩ RDS(ON) at VGS = 10 V and 4.1 A ID at VGS = 4.5 V, with 100% production-tested UIS robustness. It serves as a low-profile power switch in battery-operated systems, solid-state relays, and load drivers for lamps, solenoids, and displays.
For engineers reviewing the DMT10H052LFDF datasheet, DMT10H052LFDF pinout, DMT10H052LFDF application, or DMT10H052LFDF equivalent, key selection criteria include its 0.6 mm profile, 4 mm² PCB footprint, 15.6 A avalanche current rating, 12.2 mJ EAS, and JEDEC-qualified high-reliability performance for space-constrained DC-DC and load-switching designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching behavior: tD(ON) = 3.1 ns, tF = 4.4 ns, and Qgd = 1.6 nC at VDS = 50 V. Its gate threshold voltage (1.5–3.0 V) enables reliable turn-on with 4.5 V logic-level drive.
The integrated body diode exhibits VSD = 0.8–1.0 V at IS = 1 A and tRR = 22.6 ns, supporting moderate-frequency freewheeling in synchronous or pseudo-synchronous buck converters and relay-driving circuits where reverse recovery stress must be managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports input rails up to 80 V DC with margin for transients in industrial and automotive auxiliary power supplies. |
| RDS(ON) | 52 mΩ @ VGS = 10 V - Limits conduction loss to ≤2.1 W at 4 A continuous drain current in compact thermal layouts. |
| ID (max) | 5 A @ TA = 25°C - Sustains 4.1 A at 4.5 V gate drive, enabling direct interface with 3.3 V/5 V microcontroller GPIOs without level-shifting. |
| EAS | 12.2 mJ - Withstands single-pulse inductive energy up to 12.2 mJ during relay/solenoid turn-off, reducing snubber design burden. |
| RθJA | 151 °C/W (min pad) - Requires ≥1 inch² 2 oz copper pour for safe 0.8 W continuous dissipation at ambient 25°C. |
| Ciss | 258 pF - Enables <5 MHz switching with standard gate drivers; Crss = 5.5 pF minimizes Miller-induced shoot-through risk. |
| Qg | 5.4 nC @ VGS = 10 V - Allows full turn-on with ≤100 mA peak gate current using low-cost SOT-23 drivers like DIODES AP21xx series. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top-left corner marker) | Drain | Main high-side current path; thermally connected to exposed die paddle - must be soldered to PCB ground or power plane for thermal and electrical integrity. |
| Pin 2 | Source | Return path for load current; tied to system ground or low-side reference; forms body diode anode with Drain. |
| Pin 3 | Gate | Control terminal; requires 1.5–3.0 V threshold activation; sensitive to ESD - layout must minimize trace inductance and avoid floating routing. |
| Pin 4 | Drain | Second drain connection; electrically and thermally parallel to Pin 1 - improves current sharing and thermal spreading. |
| Pin 5 | Source | Second source connection; parallel to Pin 2 - reduces source inductance and improves switching stability under high di/dt. |
| Pin 6 | Gate | Second gate connection; parallel to Pin 3 - lowers effective gate resistance (Rg = 6.3 Ω) and accelerates turn-on/turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin portable electronics (e.g., wearables, IoT sensors) where Z-height is constrained to <1.0 mm. |
| 4 mm² PCB footprint | Reduces board area by >60% vs. SO-8 or PowerPAK 1212-8, easing layout in multi-MOSFET power stages with tight spacing requirements. |
| 100% UIS tested | Every unit passes unclamped inductive switching at IAS = 15.6 A and L = 0.1 mH - eliminates field failures in relay/solenoid driver applications. |
| JEDEC-qualified reliability | Meets AEC-Q101 stress test conditions for HTRB, HAST, and temperature cycling - suitable for industrial control and automotive body electronics. |
| Halogen- and antimony-free | Contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - satisfies IPC-1752A Class 3 environmental compliance for green manufacturing programs. |
Applications
| Battery-Powered Load Switching | Solid-State Relay Replacement |
|---|---|
Use Scenario: Controlling 12 V/24 V DC loads (e.g., LED arrays, fans, actuators) in handheld medical devices and portable test equipment. IC Role / Device Role / Timing Role: Low-side load switch with logic-level gate drive compatibility and minimal quiescent current (<1 µA IDSS). Use Value: 52 mΩ RDS(ON) limits voltage drop to <210 mV at 4 A, extending battery life and avoiding thermal derating in sealed enclosures. |
Use Scenario: Replacing electromechanical relays in HVAC zone controllers and PLC I/O modules requiring silent, bounce-free switching. IC Role / Device Role / Timing Role: High-voltage, high-current solid-state switch with 100 V VDSS and 15.6 A IAS avalanche capability. Use Value: Eliminates contact wear and EMI from arcing; 22.6 ns tRR ensures clean commutation in zero-crossing AC switching circuits. |
| Low-Voltage Motor Driver Stage | Power Management in Space-Constrained Modules |
Use Scenario: Driving small brushed DC motors (e.g., in smart locks, robotic joints) powered from 5–12 V Li-ion batteries. IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast tF = 4.4 ns and low Qgd = 1.6 nC to minimize dead-time losses. Use Value: 4.1 A ID at 4.5 V gate drive supports peak motor currents up to 3.5 A without external level shifters or gate drivers. |
Use Scenario: Input protection and sequencing in compact USB-C PD adapters, PoE injectors, and edge AI sensor nodes. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch with 0.6 mm height and 2.0 × 2.0 mm outline. Use Value: 4 mm² footprint allows dual-device placement on 6 mm × 6 mm PCB areas; 151 °C/W RθJA enables thermal management via internal copper layers only. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H052LSDQ-7 | Same die, SOT-23-3 package; RθJA = 220 °C/W; max ID = 3.2 A @ 25°C. | Lower power density; suited for prototyping or low-current signal switching where board space is less critical. | Select when manual soldering or legacy footprint compatibility is required; not recommended for >2 A continuous loads. |
| DMTH10H052LWQ-13 | Same RDS(ON) spec but in WDFN-3×3-8 package; RθJA = 75 °C/W; ID = 6.5 A @ 25°C. | Higher thermal capacity and current rating; includes additional source/gate pins for improved layout symmetry. | Choose for higher-power (>4 A) or thermally demanding applications where 3×3 mm area is acceptable and lower RθJA is needed. |
Compared with DMT10H052LFDF, the SOT-23 variant trades thermal performance for assembly simplicity, while the WDFN-3×3 offers 2.5× better thermal resistance and 30% higher current - making the U-DFN2020-6 optimal for ultra-compact, medium-power switching where height and area are primary constraints.
Availability
DMT10H052LFDF is available at Aetrix Electronics and suitable for battery-powered load switching, solid-state relay replacement, and low-voltage motor driver applications requiring stable component supply and long-term manufacturability.
Supply support for DMT10H052LFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for compact, high-reliability DC-DC conversion and load-switching applications where low gate drive voltage and minimal board area are essential.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT10H052LFDF supports 4 A continuous drain current at TA = +70°C when mounted on an FR-4 board with 2 oz copper and minimum recommended pad layout. This rating assumes no forced airflow and relies on the device's 151 °C/W RθJA to maintain junction temperature below 150°C.
Does this MOSFET require a gate resistor for typical 3.3 V MCU drive?
A gate resistor is recommended: 10–22 Ω limits peak gate current to <100 mA during turn-on, preventing ringing and overshoot caused by the 6.3 Ω intrinsic gate resistance and PCB trace inductance. No external level shifter is needed due to its 1.5–3.0 V VGS(TH) range.
Is the body diode suitable for freewheeling in a buck converter?
Yes - the body diode has VSD = 0.8–1.0 V at 1 A and tRR = 22.6 ns, making it usable for discontinuous-conduction-mode (DCM) buck operation up to ~500 kHz. For higher frequencies or synchronous rectification, pairing with an external Schottky is advised to reduce losses.
How does the U-DFN2020-6 (Type F) package affect thermal design?
The U-DFN2020-6 exposes the drain paddle directly to the PCB, requiring soldering to a thermal pad connected to ≥1 inch² of 2 oz copper for rated 0.8 W dissipation. Without this, RθJA degrades to >200 °C/W, limiting safe operating current to <2 A at 25°C ambient.
DMT10H052LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 52mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 258 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT10H052LFDF-13 FAQ
1.How can I place an order for DMT10H052LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H052LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H052LFDF-13 reliable?
The price and inventory of DMT10H052LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H052LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT10H052LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H052LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H052LFDF-13?
DMT10H052LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H052LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H052LFDF-13?
For technical support, including DMT10H052LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H052LFDF-13 requirements.
6.How does Aetrix verify that DMT10H052LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H052LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H052LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT10H052LFDF-13?
All DMT10H052LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H052LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H052LFDF-13 part is unused and in its original packaging.
Return procedure for DMT10H052LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT10H052LFDF-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
