Diodes Incorporated DMT10H052LFDF-7

Overview

DMT10H052LFDF from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, delivering 52 mΩ R_DS(ON) at V_GS = 10 V and 4.1 A I_D at 4.5 V drive. It serves as a low-profile power switch in battery-powered systems and solid-state relays, with 100% production-tested UIS robustness and 0.6 mm profile.

For engineers reviewing the DMT10H052LFDF datasheet, DMT10H052LFDF pinout, DMT10H052LFDF application, or DMT10H052LFDF equivalent, key selection factors include its 75 mΩ R_DS(ON) @ 4.5 V for 3.3 V logic-level drive compatibility, 15.6 A avalanche current rating, and JEDEC-qualified reliability for industrial and automotive-adjacent designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 3.1 ns, t_F = 4.4 ns, and Q_gd = 1.6 nC at V_DS = 50 V. Its body diode exhibits V_SD = 0.8–1.0 V at 1 A, with t_RR = 22.6 ns and Q_RR = 43.6 nC under IF = 4 A, di/dt = 300 A/µs conditions.

The device operates across –55°C to +150°C junction temperature range and features integrated gate protection diode. Thermal design is supported by R_θJA = 64 °C/W (with 1-inch² 2 oz Cu pad) and R_θJC = 11 °C/W, enabling compact thermal management in space-constrained PCB layouts.

Key Specifications

Pinout & Package

Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, green molded plastic (UL 94V-0), NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMT10H052LFDF, DMN3020LFG-7 trades voltage headroom for lower R_DS(ON) in low-voltage portable gear, while DMTH10H052LPSQ-13 adds automotive compliance at the cost of footprint and thermal resistance - making the DMT10H052LFDF optimal for space-constrained industrial and consumer designs needing 100 V capability without automotive overhead.

Availability

DMT10H052LFDF is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and microcontroller-driven actuator interfaces requiring stable component supply and long-term manufacturability.

Supply support for DMT10H052LFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, and manufacturing in ISO/TS 16949-certified facilities.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered for high-efficiency, low-footprint power switching in portable, industrial, and infrastructure applications where thermal density and logic-level drive are critical.

FAQ

Is DMT10H052LFDF suitable for 3.3 V microcontroller gate drive?

Yes. The device delivers 4.1 A continuous drain current at V_GS = 4.5 V, with guaranteed V_GS(TH) of 1.5–3.0 V and R_DS(ON) = 75 mΩ max under that condition. This ensures robust turn-on with standard 3.3 V GPIO outputs, even accounting for voltage drops across series resistors or PCB traces.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C. With R_θJA = 64 °C/W on a 1-inch² 2 oz Cu pad, sustained 5 A drain current requires ambient temperatures below +65°C to maintain T_J ≤ 150°C - verified via SOA curve (Figure 12) for DC and pulsed conditions.

Does DMT10H052LFDF include integrated ESD protection?

Yes. The datasheet specifies an integrated gate protection diode and confirms ±10 µA gate leakage at ±20 V, indicating built-in ESD structures. It also meets JESD22-A114 (HBM) and JESD22-C101 (CDM) requirements per Diodes' JEDEC-qualified reliability program, though exact HBM/CDM values are not published in DS41699 Rev. 4–2.

Can this MOSFET replace through-hole TO-252 devices in existing designs?

No direct drop-in replacement: the U-DFN2020-6 (2.0 × 2.0 mm) footprint differs significantly from TO-252's 6.5 × 6.1 mm outline and thermal pad layout. However, its 52 mΩ R_DS(ON) and 100 V rating match many TO-252 MOSFETs (e.g., DMN3020LFG-7 is not voltage-compatible); redesign of PCB pads and thermal relief is required for migration.