Diodes Incorporated DMT10H072LDV-13

Overview

DMT10H072LDV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 100V V_DSS, 66mΩ R_DS(ON) @ 10V V_GS, and 12A continuous drain current at T_C = +25°C. It integrates two matched silicon die for synchronous rectification and half-bridge switching in compact DC-DC converters.

For engineers reviewing the DMT10H072LDV datasheet, DMT10H072LDV pinout, DMT10H072LDV application, or DMT10H072LDV equivalent, key selection criteria include its dual-channel layout, low gate charge (4.5nC @ 10V), fast switching (t_F = 4.3ns), and thermal resistance of 6.7°C/W junction-to-case - critical for high-density power stage design.

Technical Context

This MOSFET employs planar trench-gate technology to achieve simultaneous low R_DS(ON) and minimized output capacitance (C_oss = 89.3pF). Its dual-die configuration shares a common source connection per channel (S1/G1/D1 and S2/G2/D2), enabling independent gate control for bidirectional switching or phase-split operation.

The device supports logic-level drive with V_GS(TH) between 1–3V and delivers stable on-resistance across -55°C to +150°C (normalized R_DS(ON) variation <20% at 150°C). Its 1.8mJ avalanche energy rating (L = 0.1mH) supports robustness in inductive load switching.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced dual-channel package with exposed drain pads for both channels. Molded green compound, UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMT6009LSD-13 and DMN3029LFD-13, DMT10H072LDV uniquely balances 100V rating, dual-channel integration, and 66mΩ on-resistance in a 3.3×3.3mm footprint - making it the only option for space-constrained 48V synchronous rectifiers requiring ≥10A per channel.

Availability

DMT10H072LDV-13 is available at Aetrix Electronics and suitable for USB PD 3.1 adapters, industrial 48V DC-DC converters, and automotive body control modules requiring stable component supply and long-lifecycle assurance.

Supply support for DMT10H072LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This device belongs to Diodes' PowerMOS™ dual-channel portfolio, engineered specifically for high-efficiency, high-density DC-DC conversion where board space, thermal performance, and voltage headroom are critical constraints.

FAQ

What is the maximum continuous drain current for each channel at T_C = +70°C?

Each channel supports 10A continuous drain current at T_C = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package under realistic PCB copper area conditions (1-inch² 2oz copper plate per datasheet Note 6).

Can DMT10H072LDV-13 be used in an automotive-grade design?

Yes - while the base part is not AEC-Q101 qualified, Diodes offers automotive-grade variants (e.g., DMT10H072LDVQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. Standard DMT10H072LDV-13 is commonly used in non-safety-critical body electronics with customer-specific qualification.

How does the dual-channel layout affect PCB layout and thermal management?

The dual-channel structure shares no internal connections between channels except through the PCB. Each drain (D1/D2) and source (S1/S2) must be routed independently, but both exposed drain pads are soldered to a common thermal pad. This allows shared heatsinking while maintaining electrical isolation - critical for half-bridge and bidirectional topologies.

What is the significance of the "7DV" marking code on the device top?

"7DV" is the product type identifier per Diodes' marking convention, confirming this is the DMT10H072LDV variant. It is followed by YYWW date code (e.g., "2324" = week 24, 2023). This marking enables traceability to wafer lot, assembly batch, and test data per Diodes' quality system.