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Diodes Incorporated DMT10H072LDV-7
- Part No.:
- DMT10H072LDV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT10H072LDV-7.pdf
- Description:
- MOSFET 2N-CH 100V 12A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,989
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Product details
Overview
DMT10H072LDV-7 from Diodes Incorporated is a dual 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 12A continuous drain current at TC = +25°C, with RDS(ON) = 66 mΩ @ VGS = 10V and 114 mΩ @ VGS = 4.5V. It integrates two independent high-efficiency power switches optimized for synchronous rectification and load switching in DC-DC converters.
For engineers reviewing the DMT10H072LDV-7 datasheet, DMT10H072LDV-7 pinout, DMT10H072LDV-7 application, or DMT10H072LDV-7 equivalent, key selection criteria include its dual-channel layout, low gate charge (Qg = 4.5 nC @ VGS = 10V), fast switching (tF = 4.3 ns), and AEC-Q101 readiness for automotive power management.
Technical Context
This MOSFET employs planar trench-gate technology to simultaneously reduce RDS(ON) and gate-drain charge (Qgd = 1.3 nC), enabling high-frequency operation up to 1 MHz in buck converters. Its dual-die configuration shares a common source connection per channel (S1/G1/D1 and S2/G2/D2), supporting independent control of two power paths without internal coupling.
Thermal performance is defined by RθJC = 6.7°C/W and RθJA = 57°C/W on 1-inch² copper, with junction temperature range from –55°C to +150°C. The device exhibits normalized RDS(ON) drift of ≤1.8× over full temperature range at VGS = 10V, ID = 4.5A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 48V industrial bus and 60V automotive input rails with 20% margin. |
| RDS(ON) @ VGS = 10V | 66 mΩ max - Enables <1.5W conduction loss at 12A in high-current synchronous rectifiers. |
| Qg @ VGS = 10V | 4.5 nC - Reduces gate drive power requirement and enables efficient 500 kHz–1 MHz switching. |
| tF | 4.3 ns - Limits switching transition time to minimize overlap losses in hard-switched topologies. |
| ID (TC = +25°C) | 12 A - Sustains continuous output current in 25W–30W DC-DC stages with forced-air cooling. |
| VGS(TH) | 1–3 V - Ensures reliable turn-on with standard 3.3V/5V logic-level gate drivers. |
| Ciss | 228 pF - Low input capacitance reduces Miller effect and improves gate drive stability. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced 8-pin dual-channel MOSFET package with exposed drain pads for low thermal resistance (RθJC = 6.7°C/W). Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to PCB copper pour for heat sinking. |
| Pin 2 (S1) | Source of Channel 1 | Return path for Channel 1; tied to local ground or switch-node reference; not internally connected to S2. |
| Pin 3 (G1) | Gate of Channel 1 | Control input for Channel 1; requires <4.5 nC total charge for full enhancement; sensitive to ESD (±20V rating). |
| Pin 4 (D2) | Drain of Channel 2 | Independent high-current output node; separate thermal pad from D1; supports dual-phase interleaving. |
| Pin 5 (S2) | Source of Channel 2 | Independent return path; enables floating-source configurations such as high-side driving with bootstrap gate drive. |
| Pin 6 (G2) | Gate of Channel 2 | Independent control terminal; identical threshold and charge characteristics to G1; no internal cross-coupling. |
| Pins 7 & 8 (Exposed Drain Pads) | Thermal & Electrical Drain Connection | Internally bonded to D1 and D2; must be soldered to large copper area for thermal dissipation and low-inductance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel MOSFETs | Enables compact dual-phase or redundant power-path designs without external isolation components. |
| RDS(ON) = 48 mΩ typ @ VGS = 10V | Reduces conduction loss by ≥25% vs. legacy 100V MOSFETs in 12A applications, improving efficiency >94% at 25W. |
| Qgd/Qg ratio = 0.29 | Minimizes Miller plateau duration, enabling stable 1 MHz operation with minimal gate drive overshoot. |
| 100% lead-free, halogen- and antimony-free | Meets RoHS 3 (2015/863/EU) and automotive "Green" standards (<900 ppm Br/Cl, <1000 ppm Sb). |
| AEC-Q101 qualified (PPAP-capable) | Validated for automotive powertrain and body electronics requiring IATF 16949 manufacturing and change control. |
Applications
| Automotive DC-DC Converter | Industrial Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: 12V-to-5V/3.3V step-down converter in ADAS camera modules and infotainment head units. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing external Schottky diodes; each channel handles one phase of interleaved topology. Use Value: Achieves >95% peak efficiency at 5A load with <15 mW gate drive loss due to Qg = 4.5 nC and low RDS(ON). |
Use Scenario: 24V brushed DC motor control in factory automation actuators and HVAC dampers. IC Role / Device Role / Timing Role: High-side and low-side switch in half-bridge configuration; G1 controls low-side, G2 controls high-side with bootstrap gate drive. Use Value: Enables 100 kHz PWM operation with tF = 4.3 ns and VGS(TH) = 1–3 V, reducing dead-time uncertainty and shoot-through risk. |
| USB-C PD Power Delivery | Server VRM Phase Doubler |
|
Use Scenario: Input protection and load switching in 100W USB-C PD sink adapters with dual 5V/20V rails. IC Role / Device Role / Timing Role: Dual independent load switches managing VBUS routing and fault isolation between Type-C CC logic and power path. Use Value: Leverages low IDSS = 1 μA and fast tD(OFF) = 12.3 ns to meet USB PD 3.1 fast role swap timing requirements. |
Use Scenario: Phase-doubler stage in 48V-to-1V server VRMs delivering >300A to CPU/GPU cores. IC Role / Device Role / Timing Role: Second-stage synchronous rectifier doubling effective phase count; D1/S1/G1 and D2/S2/G2 operate in parallel per phase. Use Value: Delivers 12A/channel with RDS(ON) = 66 mΩ @ 10V, reducing per-phase conduction loss by 32% versus single-channel alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel 100V N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H072LSDQ-7 | Same die, PowerDI5060-8 package; RθJA = 42°C/W (vs. 57°C/W); higher PD = 3.2W. | Better thermal performance for >15W continuous operation; larger footprint (5.0 mm × 6.0 mm). | Select when board space allows and junction temperature must stay <125°C at 12A continuous. |
| DMTH10H072LSD-7 | Single-channel variant; identical RDS(ON), Qg, and VDSS; PowerDI3333-8 package. | Requires two devices for dual-channel function; increases BOM count and layout complexity. | Choose only if channel independence is unnecessary and design uses discrete gate drive per switch. |
Compared with DMT10H072LDV-7, the DMT10H072LSDQ-7 offers superior thermal capability in exchange for larger area, while the DMTH10H072LSD-7 sacrifices integration for flexibility in asymmetric channel control-neither matches the original's balance of density, thermal performance, and dual-channel autonomy.
Availability
DMT10H072LDV-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drivers, and USB-C PD power delivery systems requiring stable component supply, AEC-Q101 compliance, and high-reliability packaging.
Supply support for DMT10H072LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ISO/TS 16949-certified facilities.
This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion in automotive, industrial, and computing applications where low RDS(ON), fast switching, and AEC-Q101 qualification are mandatory.
FAQ
What is the maximum pulsed drain current rating for DMT10H072LDV-7?
The device supports IDM = 20 A for 10 μs pulses at 1% duty cycle, validated under conditions that limit junction temperature rise. This rating applies to short-circuit protection and overload scenarios in DC-DC controllers, but sustained operation above 12 A requires thermal derating per the RθJA = 57°C/W curve and PCB copper area.
Can DMT10H072LDV-7 be used in high-side switch configurations?
Yes-each channel (G1/S1/D1 and G2/S2/D2) operates independently with no internal source tie, enabling true high-side switching when paired with bootstrap or isolated gate drivers. The VGS(TH) range of 1–3 V ensures compatibility with 3.3V microcontroller outputs, and the ±20 V VGSS rating supports gate drive referenced to floating source potentials.
Is DMT10H072LDV-7 qualified for automotive applications?
Yes-the device is AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and PPAP-capable. It meets automotive change-control requirements and is specified for operation from –55°C to +150°C junction temperature, making it suitable for engine bay, transmission control, and ADAS power systems.
How does the PowerDI3333-8 package improve thermal performance over SO-8?
The PowerDI3333-8 uses an exposed dual-drain thermal pad that lowers RθJC to 6.7°C/W-nearly 40% better than standard SO-8-and achieves RθJA = 57°C/W on 1-inch² copper. Its 3.3 mm × 3.3 mm footprint saves >50% board area versus SO-8 while maintaining mechanical robustness and solder joint reliability per J-STD-020 Level 1 moisture sensitivity.
DMT10H072LDV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Rds On (Max) @ Id, Vgs:
- 66mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 228pF @ 50V
- Power - Max:
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT10H072LDV-7 FAQ
1.How can I place an order for DMT10H072LDV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H072LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H072LDV-7 reliable?
The price and inventory of DMT10H072LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H072LDV-7 is usually 5 days.
3.What payment methods are accepted for DMT10H072LDV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H072LDV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H072LDV-7?
DMT10H072LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H072LDV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H072LDV-7?
For technical support, including DMT10H072LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H072LDV-7 requirements.
6.How does Aetrix verify that DMT10H072LDV-7 is sourced from the original manufacturer or authorized distributors?
All DMT10H072LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H072LDV-7 meets industry standards.
7.What is the process for return or replacement of DMT10H072LDV-7?
All DMT10H072LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H072LDV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H072LDV-7 part is unused and in its original packaging.
Return procedure for DMT10H072LDV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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