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Diodes Incorporated DMT10H072LFDF-13
- Part No.:
- DMT10H072LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT10H072LFDF-13.pdf
- Description:
- MOSFET N-CH 100V 4A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,595
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Product details
Overview
DMT10H072LFDF-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, rated for 4A continuous drain current at VGS = 10V, with RDS(ON) = 62 mΩ max, optimized for low-profile power switching in battery-operated systems and solid-state relays.
For engineers reviewing the DMT10H072LFDF-13 datasheet, DMT10H072LFDF-13 pinout, DMT10H072LFDF-13 application, or DMT10H072LFDF-13 equivalent, key selection criteria include its 0.6mm profile, 100% UIS-tested ruggedness, 71°C/W RθJA on FR-4 with recommended pad layout, and verified gate charge (Qg = 4.5 nC @ 10V) for efficient PWM control in compact DC-DC and load-switching designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching (tD(OFF) = 12.3 ns, Qgd = 1.3 nC) and robust unclamped inductive switching capability (EAS = 1.8 mJ). Its VGS(TH) range (1–3 V) supports direct logic-level drive from 3.3V/5V microcontrollers.
The device integrates a body diode with VSD = 0.7–1.0 V at 1A and tRR = 22.9 ns, enabling synchronous rectification and flyback recovery in high-frequency converters. Thermal performance is validated per J-STD-020 Level 1 moisture sensitivity and 149°C/W RθJA under minimal pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100V drain-source blocking voltage in off-state, suitable for 48V industrial bus and 24V automotive auxiliary rails. |
| RDS(ON) | 62 mΩ max @ VGS = 10V, ID = 4.5A - Enables <0.25W conduction loss at 2A, critical for thermally constrained portable PCBs. |
| Qg | 4.5 nC @ VGS = 10V - Low gate charge reduces driver power demand and switching losses in 500kHz–1MHz DC-DC controllers. |
| EAS | 1.8 mJ @ L = 0.1 mH - Confirmed energy rating ensures reliable operation in inductive load switching without snubber circuits. |
| RθJA | 71°C/W - Measured on FR-4 with 2oz copper and recommended pad layout; enables 1.8W dissipation at +25°C ambient. |
| VGS(TH) | 1–3 V - Threshold voltage window allows stable turn-on with standard 3.3V GPIO, avoiding marginal bias in low-voltage systems. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, exposed thermal pad (Pin 6), RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain (D) | Main high-side current path; connected to internal die backside and thermal pad for enhanced heat transfer. |
| 2 | Source (S) | Reference node for gate drive; tied to PCB ground plane via multiple vias under thermal pad for low-inductance return path. |
| 3 | Gate (G) | Control input; requires <4.5 nC charge for full enhancement; sensitive to ESD (±20V rating). |
| 4 | Drain (D) | Second drain terminal; paralleled internally with Pin 1 to reduce package inductance and improve current sharing. |
| 5 | Source (S) | Secondary source connection; used with Pin 2 to minimize source inductance in high-di/dt switching. |
| 6 | Thermal Pad (EP) | Electrically connected to drain; must be soldered to large copper pour for thermal management and mechanical stability. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin consumer electronics (e.g., wearables, IoT sensors) where Z-height is constrained to ≤0.7 mm. |
| PCB footprint 4 mm² | Reduces board area by >50% vs. SO-8 or SOT-23 packages, supporting dense power-stage layouts in space-limited modules. |
| 100% UIS tested | Every unit passes unclamped inductive switching stress test, eliminating field failures in relay/solenoid driving applications. |
| Halogen- and antimony-free | Meets strict environmental compliance (Br+Cl <1500 ppm, Sb <1000 ppm), required for EU medical and industrial certifications. |
| Moisture Sensitivity Level 1 | No baking required prior to reflow; compatible with standard J-STD-020 assembly processes without handling delays. |
Applications
| Battery-Powered Load Switching | Solid-State Relay Replacement |
|---|---|
|
Use Scenario: Power gating of peripherals (GPS, BLE radio, display backlight) in handheld medical monitors and asset trackers. IC Role / Device Role / Timing Role: High-side load switch controlled by MCU GPIO; operates in linear or saturated mode during enable/disable transitions. Use Value: 62 mΩ RDS(ON) limits dropout to <125 mV at 2A, preserving battery runtime; 0.6 mm height avoids interference with stacked battery cells. |
Use Scenario: Replacing electromechanical relays in HVAC zone actuators and smart lighting controllers. IC Role / Device Role / Timing Role: Low-side switching element driving 24V solenoid valves or 12V incandescent lamps with PWM dimming. Use Value: 1.8 mJ EAS withstands inductive kickback without external clamping; 22A pulsed rating handles 10× steady-state coil surge currents. |
| Low-Voltage DC-DC Converter Sync Rectifier | Portable Equipment Power Management |
|
Use Scenario: Secondary-side synchronous rectification in 5V/3.3V buck converters for USB-C PD adapters and power banks. IC Role / Device Role / Timing Role: Fast-recovery body diode (tRR = 22.9 ns) and low Qgd (1.3 nC) enable clean zero-voltage switching at 1 MHz. Use Value: 47 mΩ typical RDS(ON) cuts conduction loss by 35% vs. Schottky diodes, improving efficiency from 88% to 92% at 2A output. |
Use Scenario: System-level power sequencing and fault protection in ruggedized tablets and handheld test equipment. IC Role / Device Role / Timing Role: Overcurrent-protected high-side switch with integrated thermal shutdown behavior (TJ limit = 150°C). Use Value: 149°C/W RθJA (minimal pad) and 71°C/W (recommended pad) allow precise thermal design margining; 1.6A body diode supports reverse-current blocking during hot-swap events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H072LFD-7 | Same die, identical RDS(ON) and Qg, but in U-DFN2020-6 (Type D) package with different pinout (G-S-D vs. D-S-G) and no thermal pad exposure. | Lacks exposed drain pad; unsuitable for high-power (>1W) continuous operation without additional thermal vias. | Select only if legacy board layout uses Type D footprint and thermal budget permits 30% higher junction temperature rise. |
| DMT10H072LFDFQ | Automotive-grade variant (AEC-Q101 qualified), same electrical specs, but with extended temperature range (−55°C to +175°C) and PPAP documentation support. | Required for under-hood or engine-control module use; not necessary for commercial-grade portable devices. | Choose when ISO/TS 16949 production traceability, failure-in-time (FIT) data, or extended temperature validation is mandated. |
Compared with DMT10H072LFDF-13, DMN10H072LFD-7 sacrifices thermal performance for pinout compatibility, while DMT10H072LFDFQ adds automotive qualification overhead without electrical benefit-making the -13 version optimal for cost-sensitive, space-constrained industrial and consumer power switches.
Availability
DMT10H072LFDF-13 is available at Aetrix Electronics and suitable for battery-powered load switching, solid-state relay replacement, and low-voltage DC-DC converter sync rectification requiring stable component supply across prototyping, pilot production, and volume manufacturing phases.
Supply support for DMT10H072LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for compact, high-reliability switching in space- and thermal-constrained applications-emphasizing low RDS(ON), fast switching, and robust UIS performance.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT10H072LFDF-13 delivers 3.2A continuous drain current at TA = +70°C with VGS = 10V, based on its 0.5W power dissipation limit and 149°C/W thermal resistance under minimal pad layout. Derating follows linear interpolation between 4A at 25°C and 3.2A at 70°C.
Does this MOSFET require a gate resistor for stability?
A 10Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop, especially when driving at >500kHz. The device's 8.2Ω intrinsic gate resistance and low Crss (2.5 pF) make it inherently stable, but external damping improves EMI performance in noisy environments.
Can the thermal pad (Pin 6) be left floating during PCB layout?
No-the exposed thermal pad (Pin 6) is electrically connected to the drain and must be soldered to a dedicated PCB copper pour tied to the drain net. Leaving it unconnected degrades thermal performance by >40%, risks solder joint voiding, and violates JEDEC U-DFN2020-6 assembly guidelines.
Is the body diode suitable for reverse-polarity protection?
Yes-the integrated body diode supports reverse-current blocking up to 1.6A continuous (IS) and exhibits VSD = 0.7–1.0V at 1A, making it viable for basic reverse-polarity protection in 5V–24V systems. However, its 22.9 ns tRR limits use in high-frequency back-to-back configurations without additional timing control.
DMT10H072LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 266 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT10H072LFDF-13 FAQ
1.How can I place an order for DMT10H072LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H072LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H072LFDF-13 reliable?
The price and inventory of DMT10H072LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H072LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT10H072LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H072LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H072LFDF-13?
DMT10H072LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H072LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H072LFDF-13?
For technical support, including DMT10H072LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H072LFDF-13 requirements.
6.How does Aetrix verify that DMT10H072LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H072LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H072LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT10H072LFDF-13?
All DMT10H072LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H072LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H072LFDF-13 part is unused and in its original packaging.
Return procedure for DMT10H072LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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