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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H072LFDF-7

Name: DMT10H072LFDF-7
Brand: Diodes Incorporated
SKU: DMT10H072LFDF-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H072LFDF-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMT10H072LFDF-7.pdf

Description:: MOSFET N-CH 100V 4A 6UDFN

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Product details

Overview

DMT10H072LFDF from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, rated for 4A continuous drain current at 25°C and featuring 62mΩ R_DS(ON) at V_GS = 10V. It delivers low-profile power switching in space-constrained battery-operated systems and solid-state relays, with 100% production-tested unclamped inductive switching (UIS) for robustness.

For engineers reviewing the DMT10H072LFDF datasheet, DMT10H072LFDF pinout, DMT10H072LFDF application, or DMT10H072LFDF equivalent, key selection criteria include its 0.6mm profile, 4mm² PCB footprint, 100V BVDSS rating, 47–62mΩ on-resistance range across gate drive voltages, and thermal resistance of 71°C/W under optimized layout - all critical for compact DC-DC converters and load-switch designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and fast switching: t_D(ON) = 3.0ns, t_F = 4.3ns, and Q_g = 4.5nC at V_GS = 10V. Its body diode exhibits V_SD = 0.7–1.0V at 1A and t_RR = 22.9ns, supporting moderate-frequency synchronous rectification.

Thermal performance is defined by two R_θJA values: 149°C/W (minimum pad layout) and 71°C/W (2oz copper, 1-inch² heatsink), reflecting dual thermal design paths. The device operates from −55°C to +150°C junction temperature and supports ±20V gate drive, enabling compatibility with standard logic-level and 12V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100V - Withstands up to 100V drain-source voltage before breakdown, suitable for 48V industrial bus and 24V automotive auxiliary rails.
RDS(ON)	62mΩ @ VGS = 10V, ID = 4.5A - Enables ≤250mW conduction loss at 4A, critical for thermally constrained portable devices.
ID (Continuous)	4A @ TA = +25°C - Sustains 4A DC load current with proper PCB copper area, matching typical USB-C PD and e-fuse requirements.
Qg	4.5nC @ VGS = 10V - Low gate charge reduces driver power and enables >1MHz switching in high-efficiency buck regulators.
tD(OFF)	12.3ns - Short turn-off delay supports precise timing control in PWM-driven solenoid and relay drivers.
EAS	1.8mJ - Energy rating validated via 0.1mH inductive test, ensuring survivability during inductive load switching transients.
RθJA	71°C/W - Achievable with 2oz copper and 1-inch² thermal pad; defines maximum power dissipation of 1.1W at +70°C ambient.

Pinout & Package

Package: U-DFN2020-6 (Type F), 2.0mm × 2.0mm × 0.6mm molded plastic with NiPdAu-plated terminals. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Top View, Marked)	Source	Primary current return path; tied to PCB ground plane for lowest inductance and thermal resistance.
Pin 2	Gate	Control input requiring <4.5nC charge; sensitive to ESD - requires series resistor and local decoupling.
Pin 3	Drain	High-side switch node; connects to load or supply rail; carries full switched current and must avoid parasitic inductance.
Pins 4–6 (Exposed Pad)	Source (Thermal & Electrical)	Integrated thermal slug - must be soldered to ≥4mm² copper pour for RθJA = 71°C/W performance.

Key Features

Feature	Design Value
0.6mm profile	Enables stacking in ultra-thin consumer electronics (e.g., wearables, hearing aids) where Z-height is limited to <1.0mm.
4mm² PCB footprint	Reduces board area by >50% vs. SO-8 or TSOP-6 equivalents, easing layout in multi-MOSFET power modules.
100% UIS tested	Guarantees avalanche ruggedness in real-world inductive switching events without derating, eliminating need for external snubbers.
Lead-free & Halogen-free	Complies with RoHS 3 (2015/863/EU) and JEDEC JS709E green standards (<900ppm Br, <900ppm Cl, <1000ppm Sb), supporting eco-design mandates.
Low RDS(ON) × Qg figure-of-merit	279 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 300kHz–1MHz DC-DC converters.

Applications

USB-C Power Delivery Switch

Smartphone Battery Protection

Use Scenario: High-side load switch controlling 5–20V power delivery to USB-C accessories with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Primary power-path MOSFET enabling fast enable/disable with <100ns transition time and minimal voltage drop.

Use Value: 62mΩ R_DS(ON) limits voltage drop to <250mV at 4A, preserving PD negotiation voltage margins while dissipating <1W at full load.

Use Scenario: Secondary-side protection FET isolating main battery from system during fault conditions (overvoltage, overtemperature).

IC Role / Device Role / Timing Role: Bidirectional blocking element controlled by battery management IC, leveraging low V_GS(TH) (1–3V) for direct GPIO drive.

Use Value: 1.6A body diode continuous current rating supports reverse-current protection during hot-swap events without external diode.

Industrial Solenoid Driver

LED Backlight Dimming Circuit

Use Scenario: 24V DC solenoid actuation in programmable logic controllers (PLCs), requiring robust inductive kick handling.

IC Role / Device Role / Timing Role: Low-side switch with integrated UIS capability, absorbing L·di/dt energy without external clamping.

Use Value: 1.8mJ EAS rating sustains repeated 24V/1A solenoid switching at 10Hz without thermal runaway or parametric shift.

Use Scenario: PWM-controlled current sink for white LED strings in automotive instrument clusters and medical displays.

IC Role / Device Role / Timing Role: Constant-current switch operating at 1–5kHz, where low Q_g minimizes gate driver losses and improves dimming linearity.

Use Value: 4.5nC Q_g allows use of low-power 3.3V microcontroller GPIOs directly, eliminating dedicated gate drivers and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H072LFD-7	Same die, but in U-DFN2020-6 (Type D) package with different pinout (G-D-S vs. S-G-D) and no exposed thermal pad.	Lacks thermal pad - RθJA = 149°C/W only; unsuitable for >0.5W continuous operation without aggressive layout.	Select only if thermal budget permits higher junction temperature rise and PCB layout cannot accommodate thermal pad soldering.
AO3400	44V BVDSS, 44mΩ RDS(ON) @ 10V, 5.7A ID - lower voltage rating but lower on-resistance and higher current.	Not suitable for 48V or 24V industrial buses due to 44V breakdown limit; acceptable only in 12V embedded systems.	Choose when operating voltage is ≤15V and priority is minimizing conduction loss over voltage margin or thermal performance.

Compared with DMT10H072LFDF, DMN10H072LFD-7 sacrifices thermal performance for pinout flexibility, while AO3400 trades voltage headroom for lower R_DS(ON) - making DMT10H072LFDF the optimal balance for 24–48V space-constrained applications demanding both ruggedness and efficiency.

Availability

DMT10H072LFDF is available at Aetrix Electronics and suitable for USB-C power delivery switches, smartphone battery protection circuits, and industrial solenoid drivers requiring stable component supply and long-term manufacturability.

Supply support for DMT10H072LFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-profile power switching in battery-powered and space-constrained industrial equipment - emphasizing R_DS(ON)/Q_g optimization and production-level UIS validation.

FAQ

What is the maximum safe operating junction temperature for DMT10H072LFDF?

The absolute maximum junction temperature is +150°C, and the device is characterized across −55°C to +150°C. At this upper limit, R_DS(ON) increases by ~100% versus 25°C, so thermal design must ensure TJ remains ≤135°C under worst-case load and ambient to maintain specified on-resistance and reliability.

Can DMT10H072LFDF be driven directly by a 3.3V microcontroller GPIO?

Yes - its V_GS(TH) is 1–3V, and it delivers 4A ID at V_GS = 4.5V. However, R_DS(ON) rises to 110mΩ at 4.5V, increasing conduction loss; for full 4A capability, a 5V or 10V gate driver is recommended to achieve 47–62mΩ.

Is the exposed thermal pad electrically isolated or connected internally?

The exposed pad (Pins 4–6) is internally connected to Source. It must be soldered to a PCB copper pour tied to the source net - not left floating or grounded separately - to ensure both thermal performance and electrical integrity per the U-DFN2020-6 (Type F) mechanical specification.

Does DMT10H072LFDF meet AEC-Q101 for automotive use?

No - the standard DMT10H072LFDF is not AEC-Q101 qualified. Diodes offers an automotive-grade variant, DMT10H072LFDFQ, which undergoes additional stress testing and is documented in a separate datasheet (DS38574Q) with extended temperature screening and failure analysis.

DMT10H072LFDF-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 62mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 266 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 800mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMT10H072LFDF-7 FAQ

1.How can I place an order for DMT10H072LFDF-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H072LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H072LFDF-7 reliable?

The price and inventory of DMT10H072LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H072LFDF-7 is usually 5 days.

3.What payment methods are accepted for DMT10H072LFDF-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H072LFDF-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H072LFDF-7?

DMT10H072LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H072LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H072LFDF-7?

For technical support, including DMT10H072LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H072LFDF-7 requirements.

6.How does Aetrix verify that DMT10H072LFDF-7 is sourced from the original manufacturer or authorized distributors?

All DMT10H072LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H072LFDF-7 meets industry standards.

7.What is the process for return or replacement of DMT10H072LFDF-7?

All DMT10H072LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H072LFDF-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H072LFDF-7 part is unused and in its original packaging.

Return procedure for DMT10H072LFDF-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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