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Diodes Incorporated DMT10H072LFDFQ-13
- Part No.:
- DMT10H072LFDFQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT10H072LFDFQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V U-DFN2020
- Quantity:
- Payment:
- Shipping:
Inventory:9,120
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Product details
Overview
DMT10H072LFDFQ-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET qualified to AEC-Q101, with RDS(ON) = 62 mΩ @ VGS = 10 V, ID = 4 A at TA = +25°C, and housed in a U-DFN2020-6 (Type F) package. It serves as a high-reliability power switch in automotive battery management, solid-state relays, and low-voltage load drivers.
For engineers reviewing the DMT10H072LFDFQ-13 datasheet, DMT10H072LFDFQ-13 pinout, DMT10H072LFDFQ-13 application, or DMT10H072LFDFQ-13 equivalent, key selection criteria include its 100% production-tested UIS robustness, 0.6 mm profile for space-constrained PCBs, and AEC-Q101 qualification for automotive-grade thermal and reliability validation.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in 100V-class automotive loads. Its gate threshold voltage (1–3 V) enables direct drive from 3.3 V/5 V microcontrollers, while its 1.8 mJ EAS rating supports unclamped inductive turn-off in relay/solenoid circuits without external snubbers.
The device features a thermally enhanced U-DFN2020-6 package with NiPdAu-plated terminals and 13 °C/W RθJC, enabling efficient heat transfer to PCB copper when mounted on 1-inch² 2 oz copper. Its Ciss = 228 pF and Qg = 4.5 nC (VGS = 10 V) support high-frequency PWM control up to 500 kHz in compact DC-DC and LED driver designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands peak drain-source transients in 12 V/24 V automotive systems with margin against load-dump spikes. |
| RDS(ON) | 62 mΩ @ VGS = 10 V - Delivers ≤0.25 W conduction loss at 2 A continuous current, minimizing thermal rise on small PCB areas. |
| ID (max) | 4 A @ TA = +25°C - Supports sustained switching of solenoids, lamps, and displays without derating in ambient-cooled layouts. |
| EAS | 1.8 mJ - Guarantees single-pulse avalanche energy handling during inductive turn-off, eliminating need for external clamping diodes. |
| RθJA | 71 °C/W (with 1-inch² copper) - Enables junction temperature rise of only ~50°C at 1.1 W dissipation, supporting operation up to +125°C ambient. |
| Qg | 4.5 nC @ VGS = 10 V - Reduces gate-drive power requirement and switching transition time in microcontroller-driven applications. |
| VGS(TH) | 1–3 V - Ensures reliable turn-on with standard logic-level outputs, avoiding marginal switching in noisy automotive environments. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, 6-terminal leadless plastic package with exposed thermal pad; compliant with J-STD-020 Level 1 moisture sensitivity and RoHS/"Green" requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; connected to PCB ground plane for thermal and electrical performance. |
| 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <100 nA leakage; routed away from noise sources per layout guidelines. |
| 3 (Drain) | Power output (D) | High-side or low-side switched node; ties to load or supply rail depending on topology. |
| 4 (Source) | Source terminal (S) | Second source connection for lower loop inductance and improved thermal spreading across package bottom. |
| 5 (Drain) | Power output (D) | Secondary drain connection enhancing current capacity and reducing package resistance under pulsed loads. |
| 6 (Thermal Pad) | Exposed thermal pad | Electrically tied to source; must be soldered to large copper pour for optimal RθJA and mechanical reliability. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Ensures every unit withstands worst-case inductive energy without degradation-critical for relay/solenoid drivers where failure modes are catastrophic. |
| 0.6 mm profile | Enables integration into ultra-thin modules (e.g., body control units, smart sensors) where height clearance is limited to <1.0 mm. |
| PCB footprint: 4 mm² | Reduces board area by >50% vs. SO-8 or SOT-23 packages, supporting high-density automotive ECUs with tight layout constraints. |
| AEC-Q101 qualified + PPAP capable | Validates long-term reliability under automotive temperature cycling (-55°C to +150°C), humidity, and vibration per IATF16949 manufacturing controls. |
| NiPdAu-plated terminals | Guarantees solderability and intermetallic stability over 10+ years in harsh environments, meeting MIL-STD-202 Method 208 requirements. |
Applications
| Automotive Body Control Module (BCM) | Smart Rearview Mirror Driver |
|---|---|
|
Use Scenario: Switching 12 V incandescent lamps, door locks, and window motors in centralized vehicle body controllers. IC Role / Device Role / Timing Role: Low-side power switch controlling load current with fast turn-on (<3 ns tD(ON)) and minimal shoot-through risk. Use Value: 62 mΩ RDS(ON) limits resistive heating to <0.25 W at 2 A, enabling fanless design and extending module lifetime beyond 15-year automotive service life. |
Use Scenario: Driving electrochromic dimming elements and LED status indicators in interior rearview mirrors. IC Role / Device Role / Timing Role: Precision current-controlled switch delivering stable 100–500 mA loads with <1% duty-cycle jitter in PWM dimming. Use Value: Low Qg (4.5 nC) and fast tF (4.3 ns) enable clean 10 kHz PWM edges, eliminating visible flicker and ensuring consistent optical response. |
| Engine Bay Solenoid Interface | 12 V Battery-Powered Industrial Relay |
|
Use Scenario: Controlling fuel injector solenoids and HVAC actuators exposed to under-hood temperatures up to +125°C. IC Role / Device Role / Timing Role: High-reliability power switch rated for 100 V VDSS and 1.8 mJ EAS to absorb back-EMF without external protection. Use Value: RDS(ON) variation <15% across -55°C to +150°C ensures predictable power loss and thermal behavior in extreme engine bay conditions. |
Use Scenario: Replacing electromechanical relays in portable test equipment and battery-powered industrial controllers. IC Role / Device Role / Timing Role: Solid-state replacement for SPST relays, providing silent, bounce-free switching with 22 A pulsed capability. Use Value: 0.6 mm profile and 4 mm² footprint allow drop-in replacement of larger relay footprints, reducing system size by 60% and eliminating mechanical wear-out mechanisms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H072LSDQ-13 | Same die, but in SOT-23-6 package; RθJA = 149 °C/W (no thermal pad); 1.2× larger footprint. | Limited to lower-power loads (<1.5 A continuous) due to higher thermal resistance; unsuitable for BCM or solenoid use. | Select only when board space permits larger package and thermal budget allows higher junction rise. |
| DMTH10H072LPSQ-13 | Same RDS(ON) and voltage rating, but in PowerDI5060 package; RθJA = 40 °C/W; 5.0 × 6.0 mm footprint. | Supports 6 A continuous current; better for high-current solenoids but incompatible with ultra-compact U-DFN layouts. | Choose when higher current headroom and superior thermal performance outweigh strict size constraints. |
Compared with DMT10H072LFDFQ-13, the SOT-23-6 variant trades thermal efficiency for legacy compatibility, while the PowerDI5060 offers higher current capacity at the cost of 7.5× board area-making the U-DFN2020-6 the optimal balance of miniaturization, automotive reliability, and 4 A capability.
Availability
DMT10H072LFDFQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, battery-powered industrial relays, and smart mirror driver circuits requiring stable component supply across multi-year production cycles.
Supply support for DMT10H072LFDFQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' AEC-Q101-qualified automotive power portfolio, engineered specifically for robust, space-efficient switching in 12 V/24 V vehicle subsystems where thermal density, reliability, and qualification rigor are mandatory.
FAQ
Is DMT10H072LFDFQ-13 suitable for high-frequency PWM motor control?
Yes. With tD(ON) = 3.0 ns, tF = 4.3 ns, and Qg = 4.5 nC at VGS = 10 V, it supports clean switching up to 500 kHz in brushed DC motor drivers. Its low Coss (89.3 pF) minimizes switching losses, and the U-DFN2020-6 thermal pad ensures stable junction temperature under repetitive 10%–90% duty cycles.
What is the maximum allowable PCB copper area for optimal thermal performance?
Diodes specifies 1 inch² (645 mm²) of 2 oz copper for the 71 °C/W RθJA rating. Using less than 0.5 inch² increases RθJA to >100 °C/W, limiting continuous current to ~2.5 A at +70°C ambient. The thermal pad must be fully soldered with ≥6 vias to inner ground layers for best results.
Does this MOSFET require a gate resistor for automotive EMI compliance?
A 10 Ω series gate resistor is recommended per Diodes' layout guidelines to damp ringing caused by parasitic LGS/Ciss resonance. This reduces dv/dt-induced EMI in 12 V systems and prevents false turn-on from coupled noise-especially critical near CAN/LIN buses in BCM applications.
Can DMT10H072LFDFQ-13 replace a mechanical relay in a 12 V automotive horn circuit?
Yes. Its 22 A pulsed drain current (IDM) and 1.8 mJ EAS rating exceed typical 12 V horn surge demands (≤15 A, ≤1 mJ). Combined with AEC-Q101 qualification and 100% UIS testing, it delivers >100,000 actuation cycles without contact wear-unlike electromechanical relays prone to arcing and pitting.
DMT10H072LFDFQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 228 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT10H072LFDFQ-13 FAQ
1.How can I place an order for DMT10H072LFDFQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H072LFDFQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H072LFDFQ-13 reliable?
The price and inventory of DMT10H072LFDFQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H072LFDFQ-13 is usually 5 days.
3.What payment methods are accepted for DMT10H072LFDFQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H072LFDFQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H072LFDFQ-13?
DMT10H072LFDFQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H072LFDFQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H072LFDFQ-13?
For technical support, including DMT10H072LFDFQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H072LFDFQ-13 requirements.
6.How does Aetrix verify that DMT10H072LFDFQ-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H072LFDFQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H072LFDFQ-13 meets industry standards.
7.What is the process for return or replacement of DMT10H072LFDFQ-13?
All DMT10H072LFDFQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H072LFDFQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H072LFDFQ-13 part is unused and in its original packaging.
Return procedure for DMT10H072LFDFQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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