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Diodes Incorporated DMT10H072LFV-13
- Part No.:
- DMT10H072LFV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT10H072LFV-13.pdf
- Description:
- MOSFET N-CH 100V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,168
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Product details
Overview
DMT10H072LFV-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 62 mΩ RDS(ON) at VGS = 10 V and 20 A continuous drain current at TC = +25°C. It serves as a high-efficiency power switch in battery-operated systems, solid-state relays, and low-voltage load drivers.
For engineers reviewing the DMT10H072LFV-13 datasheet, DMT10H072LFV-13 pinout, DMT10H072LFV-13 application, or DMT10H072LFV-13 equivalent, key selection criteria include its 3.3°C/W thermal resistance (RθJC), 4.5 nC total gate charge at 10 V, and thermally optimized PowerDI3333-8 footprint enabling high-density PCB layouts.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching performance: tD(ON) = 3.0 ns, tF = 4.3 ns, and Qgd = 1.3 nC at VDS = 50 V. Its gate threshold voltage (1.5–2.8 V) supports direct drive from 3.3 V and 5 V logic controllers.
The device integrates a robust body diode with 22.9 ns reverse recovery time and 45.2 nC QRR, suitable for synchronous rectification and freewheeling in DC-DC converters. Thermal design is enabled by an exposed drain pad offering 3.3°C/W junction-to-case resistance and compatibility with standard FR-4 PCB copper pour.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports input rails up to 80 V DC with margin for transient spikes in industrial power supplies. |
| RDS(ON) | 62 mΩ @ VGS = 10 V - Limits conduction loss to ≤2.8 W at 12 A, enabling compact thermal design without heatsink in <5 W loads. |
| ID (continuous) | 20 A @ TC = +25°C - Sustains full-rated current when mounted on ≥1 in² 2 oz copper pad, typical for motor driver H-bridge legs. |
| Qg | 4.5 nC @ VGS = 10 V - Enables efficient gate driving with <100 mW driver power at 500 kHz switching frequency. |
| RθJC | 3.3°C/W - Allows direct thermal coupling to chassis or heatsink via exposed drain pad, critical for >10 W dissipation. |
| tRR | 22.9 ns - Reduces switching losses and EMI in hard-switched topologies versus standard silicon MOSFETs with >100 ns recovery. |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.072 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All pins 1–8 connect internally to the exposed drain pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Pin 1 (marked) | Source (S) | Leftmost pin under top-view marking indicator - designated source terminal for layout reference and gate drive return path. |
| Pin 8 | Gate (G) | Rightmost pin - isolated control terminal requiring <4.5 nC charge for full enhancement; sensitive to ESD (±20 V rating). |
Key Features
| Feature | Design Value |
|---|---|
| Thermally optimized footprint | PowerDI3333-8 occupies only 33% board area of SO-8, enabling higher component density in space-constrained battery packs and portable medical devices. |
| Low gate charge | Qg = 4.5 nC at 10 V enables use with low-power microcontroller GPIOs or integrated gate drivers without external buffer stages. |
| Enhanced body diode | QRR = 45.2 nC and tRR = 22.9 ns reduce cross-conduction loss and ringing in half-bridge configurations. |
| Green packaging | Halogen- and antimony-free, fully RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb), meeting automotive and industrial environmental requirements. |
Applications
| Battery-Powered Motor Control | Solid-State Relay Replacement |
|---|---|
|
Use Scenario: Driving 12 V brushed DC motors in cordless power tools with PWM duty cycling up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor current flow; gate driven by MCU PWM output. Use Value: 62 mΩ RDS(ON) limits I²R loss to <0.9 W at 3.5 A stall current, extending battery runtime and reducing thermal stress on PCB. |
Use Scenario: Replacing electromechanical relays in HVAC control panels for fan and valve actuation. IC Role / Device Role / Timing Role: Load switch isolating 24 V AC/DC control circuits; operated with optocoupler-isolated gate drive. Use Value: Eliminates mechanical wear and contact bounce; 80 A pulsed drain rating handles inrush currents from solenoid coils without derating. |
| LED Driver for Automotive Lighting | Industrial Sensor Power Switching |
|
Use Scenario: Constant-current switching stage in adaptive front-lighting systems (AFS) with 5–15 V input range. IC Role / Device Role / Timing Role: Low-side switch modulating LED string current; synchronized to MCU-controlled PWM dimming signal. Use Value: Fast 4.3 ns fall time minimizes transition loss during 100–500 Hz dimming, preserving luminous efficacy and reducing thermal drift. |
Use Scenario: Power gating for 4–20 mA loop-powered sensors in hazardous-area instrumentation. IC Role / Device Role / Timing Role: Isolation switch enabling safe hot-swap maintenance; controlled via isolated digital I/O. Use Value: 100 V VDSS withstands 36 V transients per IEC 61000-4-5; RDS(ON) stability over −55°C to +150°C ensures reliability in oil-field downhole electronics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H072LPS-13 | Same die, PowerDI5060-8 package - larger footprint (5.0 × 6.0 mm), 2.5°C/W RθJC, 30 A ID rating. | Better thermal performance but requires 2.5× more board area; suited for >15 W continuous dissipation. | Select when thermal headroom is constrained and PCB space permits larger package. |
| DMTH10H072LPS-13 | Same RDS(ON) and VDSS, but TrenchFET Gen IV process - lower Qgd (1.0 nC vs. 1.3 nC), improved Eoss. | Superior hard-switching efficiency in 100–500 kHz SMPS; slightly higher cost and longer lead time. | Select for high-frequency DC-DC converters where switching loss dominates total loss. |
Compared with DMT10H072LFV-13, the DMT10H072LPS-13 trades board area for thermal headroom, while DMTH10H072LPS-13 improves high-frequency efficiency at the expense of gate drive simplicity and cost-making the original optimal for cost-sensitive, medium-power, space-constrained designs.
Availability
DMT10H072LFV-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay replacements, and industrial sensor power switching requiring stable component supply across extended production lifecycles.
Supply support for DMT10H072LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This MOSFET belongs to Diodes' PowerTrench® family, engineered specifically for high-efficiency, high-density power conversion and load switching in portable, industrial, and automotive applications.
FAQ
What is the maximum continuous drain current at TC = +70°C?
The DMT10H072LFV-13 supports 16 A continuous drain current at case temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package's 3.3°C/W RθJC and ambient convection constraints.
Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(TH)) ranges from 1.5 V to 2.8 V, and it delivers usable RDS(ON) (109 mΩ) at VGS = 4.5 V. However, full enhancement (62 mΩ) requires 10 V; for 3.3 V drive, pairing with a level-shifting gate driver is recommended for high-current loads.
Is the PowerDI3333-8 package lead-free and RoHS compliant?
Yes - the DMT10H072LFV-13 uses matte tin annealed over copper leadframe and green molding compound, meeting EU RoHS 2015/863/EU (RoHS 3), halogen-free (<900 ppm Br+Cl), and antimony-free (<1000 ppm) requirements per Diodes Incorporated's published definitions.
Does this MOSFET include integrated ESD protection on the gate?
No - the datasheet specifies ±20 V gate-source voltage rating but does not indicate integrated ESD protection structures. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended in environments with handling or system-level ESD risk.
DMT10H072LFV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 228 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT10H072LFV-13 FAQ
1.How can I place an order for DMT10H072LFV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H072LFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H072LFV-13 reliable?
The price and inventory of DMT10H072LFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H072LFV-13 is usually 5 days.
3.What payment methods are accepted for DMT10H072LFV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H072LFV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H072LFV-13?
DMT10H072LFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H072LFV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H072LFV-13?
For technical support, including DMT10H072LFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H072LFV-13 requirements.
6.How does Aetrix verify that DMT10H072LFV-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H072LFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H072LFV-13 meets industry standards.
7.What is the process for return or replacement of DMT10H072LFV-13?
All DMT10H072LFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H072LFV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H072LFV-13 part is unused and in its original packaging.
Return procedure for DMT10H072LFV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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