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Diodes Incorporated DMT10H075LE-13
- Part No.:
- DMT10H075LE-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
DMT10H075LE-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V SOT223 T&
- Quantity:
- Payment:
- Shipping:
Inventory:3,189
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Product details
Overview
DMT10H075LE from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SOT223 package, rated for 4A continuous drain current at 25°C, with RDS(ON) = 65mΩ @ VGS = 10V and 105mΩ @ VGS = 4.5V, optimized for load switching in uninterruptible power supplies and industrial DC-DC converters.
For engineers reviewing the DMT10H075LE datasheet, DMT10H075LE pinout, DMT10H075LE application, or DMT10H075LE equivalent, key selection criteria include its 100V VDSS, low gate charge (Qg = 4.5nC @ 10V), fast switching (tF = 4.3ns), thermal resistance (RθJA = 51°C/W), and AEC-Q101 readiness for automotive-grade reliability assessment.
Technical Context
This MOSFET employs planar silicon technology with optimized channel geometry to achieve stable RDS(ON) across temperature and low gate threshold voltage (VGS(TH) = 1.0–3.0V). Its body diode exhibits tRR = 22.9ns and QRR = 45.2nC under IF = 4.5A, di/dt = 300A/μs conditions, supporting efficient synchronous rectification and flyback recovery.
The device operates within –55°C to +150°C junction range and delivers 6mJ single-pulse avalanche energy (EAS) with IAS = 1.8A, enabling robust operation in inductive load switching without secondary breakdown. Its Ciss = 228pF and Crss = 2.5pF support high-frequency PWM control up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Withstands up to 100V drain-source blocking voltage before avalanche conduction begins. |
| RDS(ON) @ 10V | 65mΩ - Enables ≤0.26W conduction loss at 4A, suitable for thermally constrained PCB layouts. |
| Qg @ 10V | 4.5nC - Reduces gate drive power requirement and supports <100ns total switching transitions at 3Ω RGEN. |
| tF | 4.3ns - Limits turn-off switching loss in high-frequency DC-DC stages operating above 200kHz. |
| RθJA | 51°C/W - Requires ≥1in² 2oz copper pad for safe 2.4W continuous dissipation at ambient 25°C. |
| ID (70°C) | 3A - Derated current limit ensures reliable operation in enclosed industrial enclosures with elevated ambient. |
| EAS | 6mJ - Supports safe single-pulse inductive energy absorption without destructive failure in relay or solenoid drivers. |
Pinout & Package
Package: SOT223 - Surface-mount plastic package with exposed drain tab for thermal conduction; 0.112g mass; UL 94V-0 rated molding compound; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current-carrying terminal (connected to internal die drain) | Exposed metal tab on bottom surface - must be soldered to large copper pour for thermal management and current return path. |
| Pin 2 (Source) | Reference node for gate control and current return | Low-inductance connection point for gate driver ground and load return; ties directly to source region of MOSFET die. |
| Pin 3 (Gate) | Control electrode for channel formation | High-impedance input requiring <100nA leakage; sensitive to ESD - requires series resistor (≥10Ω) near driver output. |
| Pin 4 (Drain, Tab) | Secondary drain connection (same node as Pin 1) | Electrically identical to Pin 1; provides mechanical anchoring and primary thermal path to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate drive requirement | VGS(TH) = 1.0–3.0V enables direct interface with 3.3V and 5V logic-level microcontrollers without level-shifting. |
| Fast switching speed | tD(OFF) = 12.3ns and tF = 4.3ns minimize dead-time losses in half-bridge configurations. |
| Low input capacitance | Ciss = 228pF reduces gate drive current demand and improves EMI profile in high-dV/dt environments. |
| Lead-free & halogen-free | Meets RoHS 3 (2015/863/EU) and "Green" definition: Br+Cl <1500ppm, Sb <1000ppm - compliant for automotive and medical end equipment. |
| Thermal stability | No thermal runaway or secondary breakdown observed - RDS(ON) increases predictably with temperature, enabling stable current limiting. |
Applications
| Uninterruptible Power Supply (UPS) | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-side main switch in 48V-to-12V offline backup converter with battery switchover. IC Role / Device Role / Timing Role: Load switch controlling power path between AC/DC adapter and battery-backed rail during mains failure. Use Value: 100V rating accommodates 48V nominal plus surge transients; low RDS(ON) limits dropout and heat generation during extended battery hold-up. |
Use Scenario: Synchronous rectifier in isolated 24V-to-5V flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency and reduce thermal stress. Use Value: Fast tRR = 22.9ns and low QRR = 45.2nC minimize reverse recovery loss and EMI during zero-voltage switching transitions. |
| Automotive Body Control Module | Smart Lighting Driver |
Use Scenario: Low-side driver for 12V LED headlamp array with PWM dimming and short-circuit protection. IC Role / Device Role / Timing Role: Current-controlled load switch with integrated overcurrent detection via sense-FET capability. Use Value: AEC-Q101 qualification path available; 150°C max TJ supports under-hood placement; low gate charge enables precise 1kHz–20kHz PWM control. |
Use Scenario: Constant-current switch in 24V architectural LED string driver with DALI interface. IC Role / Device Role / Timing Role: High-side current regulator modulating LED brightness via analog/PWM input. Use Value: Stable RDS(ON) vs. temperature ensures consistent current regulation across –40°C to +85°C ambient; low Coss = 89.3pF minimizes capacitive coupling noise into DALI signal lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | VDSS = 30V, RDS(ON) = 20mΩ @ 10V, SOT23-3 package, lower voltage rating and smaller thermal mass. | Not suitable for >40V bus applications; limited to low-voltage logic-level loads like USB PD switches or sensor biasing. | Select only when system VIN ≤ 24V and board space constraints prohibit SOT223 footprint. |
| DMTH10H075LPS-13 | VDSS = 100V, RDS(ON) = 6.5mΩ @ 10V, PowerDI5060 package, 10× lower RDS(ON), 3× higher PD rating. | Requires larger PCB area and heavier copper; suited for 10A+ industrial motor drives where DMT10H075LE's 4A rating is insufficient. | Choose when thermal budget allows larger package and conduction loss must be reduced below 100mW at 4A. |
Compared with DMN3020LSD-13 and DMTH10H075LPS-13, DMT10H075LE uniquely balances 100V capability, SOT223 manufacturability, and 4A load handling - making it optimal for cost-sensitive, medium-power industrial and automotive auxiliary systems where space and thermal design are tightly coupled.
Availability
DMT10H075LE is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial DC-DC converters, and automotive body control modules requiring stable component supply, RoHS-compliant sourcing, and long-term lifecycle assurance.
Supply support for DMT10H075LE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
DMT10H075LE belongs to Diodes' PowerMOS™ portfolio, engineered specifically for medium-voltage, medium-current load switching in space-constrained industrial and automotive subsystems where reliability, thermal performance, and lead-free compliance are mandatory.
FAQ
What is the maximum continuous drain current for DMT10H075LE at 70°C ambient?
The DMT10H075LE supports 3A continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (RθJA = 51°C/W) and ensures junction temperature remains below 150°C under typical PCB layout conditions with 1-inch square 2oz copper pad.
Is DMT10H075LE qualified for automotive applications?
DMT10H075LE is designed to meet AEC-Q101 requirements and is manufactured in IATF 16949-certified facilities. While not pre-qualified as standard, Diodes offers PPAP-capable change control and automotive-grade screening upon request - confirm qualification status with Diodes' automotive team before deployment in safety-critical systems.
Can DMT10H075LE replace a 5A-rated MOSFET in a 4A circuit?
Yes - DMT10H075LE is rated for 4A continuous current at 25°C and 3A at 70°C, with 28A pulsed capability. In a well-cooled 4A application using proper PCB copper area, its 65mΩ RDS(ON) yields only 1.04W conduction loss, remaining within its 2.4W power dissipation limit and safe operating area (SOA) curve for single-pulse and DC conditions.
What is the recommended gate resistor value for driving DMT10H075LE in a 200kHz PWM application?
A 10Ω series gate resistor is recommended to damp ringing and limit peak gate current while maintaining fast switching. With Qg = 4.5nC and typical 3.3V/5V MCU drivers, this yields ~1.5ns rise/fall time contribution and prevents overshoot on the gate node, especially critical given its low Crss = 2.5pF and high dV/dt immunity.
DMT10H075LE-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 228 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
DMT10H075LE-13 FAQ
1.How can I place an order for DMT10H075LE-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H075LE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H075LE-13 reliable?
The price and inventory of DMT10H075LE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H075LE-13 is usually 5 days.
3.What payment methods are accepted for DMT10H075LE-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H075LE-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H075LE-13?
DMT10H075LE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H075LE-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H075LE-13?
For technical support, including DMT10H075LE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H075LE-13 requirements.
6.How does Aetrix verify that DMT10H075LE-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H075LE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H075LE-13 meets industry standards.
7.What is the process for return or replacement of DMT10H075LE-13?
All DMT10H075LE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H075LE-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H075LE-13 part is unused and in its original packaging.
Return procedure for DMT10H075LE-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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