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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H4M5LPS-13

Name: DMT10H4M5LPS-13
Brand: Diodes Incorporated
SKU: DMT10H4M5LPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H4M5LPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT10H4M5LPS-13.pdf

Description:: MOSFET BVDSS: 61V-100V POWERDI50

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Product details

Overview

DMT10H4M5LPS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI®5060-8 package, rated for 100A continuous drain current at T_C = +25°C, with R_DS(ON) = 4.3 mΩ @ V_GS = 10V and 6.2 mΩ @ V_GS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency notebook battery power management and load-switch applications.

For engineers reviewing the DMT10H4M5LPS datasheet, DMT10H4M5LPS pinout, DMT10H4M5LPS application, or DMT10H4M5LPS equivalent, key selection criteria include its 1.1°C/W R_θJC, 100% UIS-tested ruggedness, 80 nC total gate charge, and compatibility with 4.5V logic-level drive in compact power delivery systems.

Technical Context

This MOSFET employs trench-gate superjunction technology to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability (E_AS = 240 mJ). Its optimized gate charge profile (Q_gd/Q_g = 22.5%) supports clean turn-off in synchronous buck converters.

The device integrates a low-V_SD body diode (1.2 V @ 30 A) with t_RR = 63 ns and Q_RR = 133 nC, enabling efficient reverse recovery in bidirectional power paths and OR-ing configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V industrial bus and 12–24 V server VRM inputs.
R_DS(ON) @ 10 V	4.3 mΩ max - Enables ≤43 mW conduction loss at 10 A, critical for thermally constrained notebook battery switches.
I_D (T_C = 25°C)	100 A - Package-limited continuous current supports high-current load switching without external heatsink.
Q_g	80 nC - Determines gate drive power requirement; enables <1 µs switching with 100 mA driver in DC-DC controllers.
R_θJC	1.1 °C/W - Allows direct thermal coupling to PCB copper or heatsink, supporting >90 W dissipation at ΔT = 100°C.
E_AS	240 mJ - Confirmed single-pulse avalanche energy ensures reliability under inductive load interruption in motor drives.
V_GS(TH)	1.3–2.5 V - Low threshold enables stable turn-on with 3.3 V microcontroller GPIO, reducing need for level-shifting.

Pinout & Package

Package: PowerDI®5060-8 - Thermally enhanced 8-pin exposed-drain surface-mount package with 1.1°C/W junction-to-case thermal resistance and RoHS-compliant matte tin finish.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Power Drain / Heat Sink	All eight pins are internally connected to the drain terminal and form a single exposed thermal pad-must be soldered to ≥1 in² 2 oz copper for rated 100 A operation.
Pin 1 (top-left corner marker)	Source	Primary source connection; routed separately from drain pads to minimize source inductance in high-di/dt switching.
Pin 2 (adjacent to Pin 1)	Gate	Control input; requires <2.1 Ω series gate resistor to damp ringing due to 25.5 pF Crss and 4843 pF Ciss.
Pin 3 (adjacent to Pin 2)	Source	Secondary source connection-used for Kelvin sensing or low-inductance return path in precision current monitoring.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees minimum 40 A avalanche current and 240 mJ energy handling per pulse-eliminates screening failure risk in motor control transients.
Low R_DS(ON) @ 4.5 V	6.2 mΩ max enables full enhancement with standard 5 V logic or USB-PD controller outputs-no dedicated gate driver needed.
Green compound & lead-free	UL 94V-0 molding compound with <900 ppm Br/Cl and <1000 ppm Sb-meets automotive and medical environmental compliance without derating.
Fast body diode recovery	t_RR = 63 ns and Q_RR = 133 nC reduce switching losses by >35% vs. standard MOSFETs in synchronous rectification.
Thermal performance	R_θJC = 1.1°C/W allows 113 W power dissipation at T_C = 25°C-supports high-current load switching without thermal throttling.

Applications

Battery Protection Circuit

High-Current Load Switch

Use Scenario: Reverse polarity and overcurrent protection in 3-cell Li-ion laptop battery packs (12.6 V nominal).

IC Role / Device Role / Timing Role: Primary high-side switch controlling main power path between battery and system bus.

Use Value: 4.3 mΩ R_DS(ON) limits voltage drop to <43 mV at 10 A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Hot-swap enable for PCIe add-in cards or GPU auxiliary power rails.

IC Role / Device Role / Timing Role: Low-impedance power FET in inrush-limited load switch with soft-start control.

Use Value: 100 A rating and 1.1°C/W R_θJC support 50 A steady-state loads with <5°C junction rise on 1 in² copper, avoiding thermal shutdown.

DC-DC Synchronous Rectifier

Brushless DC Motor Phase Switch

Use Scenario: Secondary-side switch in 48 V → 12 V isolated buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 1.2 V V_SD and 63 ns t_RR cut reverse recovery loss by 60% versus 40 V Schottky, boosting full-load efficiency to >95%.

Use Scenario: High-side phase leg switch in 24 V BLDC motor driver for industrial fans and pumps.

IC Role / Device Role / Timing Role: Power switching element in 3-phase inverter bridge handling PWM commutation at 20 kHz.

Use Value: 240 mJ E_AS withstands inductive kickback during fault conditions, eliminating need for external snubbers in Class A motor control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP100N10T	TO-220 package, R_DS(ON) = 9.5 mΩ @ 10 V, R_θJC = 0.9°C/W, no UIS rating specified	Requires mechanical mounting and heatsink; unsuitable for space-constrained PCB-only thermal design	Choose when board area is abundant and discrete heatsinking is preferred over thermal pad soldering.
SUD10P10-60-E3	PowerPAK SO-8, R_DS(ON) = 6.0 mΩ @ 10 V, I_D = 60 A, Q_g = 52 nC, E_AS = 120 mJ	Lower current rating and avalanche energy; limited to ≤60 A continuous loads	Choose for cost-sensitive 48 V DC-DC where 60 A peak suffices and smaller footprint is prioritized over ruggedness.

Compared with IXTP100N10T and SUD10P10-60-E3, DMT10H4M5LPS uniquely combines 100 A current capability, 4.3 mΩ R_DS(ON), and production-tested UIS in a surface-mount thermal-pad package-making it optimal for high-density, high-reliability notebook and server power switches where thermal and transient robustness are non-negotiable.

Availability

DMT10H4M5LPS is available at Aetrix Electronics and suitable for notebook battery management, high-current load switching, and 48 V DC-DC converter designs requiring stable component supply and long-term lifecycle assurance.

Supply support for DMT10H4M5LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and quality systems aligned with AEC-Q200.

This MOSFET belongs to Diodes' PowerFET™ portfolio, engineered specifically for high-efficiency, high-current power conversion in portable computing and industrial power systems where low R_DS(ON) and ruggedness are critical.

FAQ

What is the maximum safe operating temperature for DMT10H4M5LPS?

The device supports junction temperatures from –55°C to +150°C. At T_J = 150°C, R_DS(ON) increases to ~1.8× its 25°C value (≈7.7 mΩ), and continuous drain current must be derated to ~60 A at T_C = 70°C per Figure 5. Thermal design must maintain T_J ≤ 150°C under worst-case load and ambient conditions.

Can DMT10H4M5LPS be driven directly by a 3.3 V microcontroller GPIO?

Yes-the V_GS(TH) range of 1.3–2.5 V ensures reliable turn-on at 3.3 V, but R_DS(ON) rises to ~12 mΩ at V_GS = 3.3 V (interpolated from Figures 3 and 4), increasing conduction loss. For <5 mΩ operation, use ≥4.5 V gate drive.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes-it is qualified to J-STD-020 Level 1 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The exposed drain pad requires full-solder coverage to a ≥1 in² thermal pad for rated current performance.

Does DMT10H4M5LPS meet AEC-Q101 for automotive use?

No-this part is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT10H4M5LPS-A) with PPAP documentation, AEC-Q101 stress testing, and IATF 16949 manufacturing. Standard DMT10H4M5LPS is intended for commercial/industrial applications only.

DMT10H4M5LPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4843 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMT10H4M5LPS-13 FAQ

1.How can I place an order for DMT10H4M5LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H4M5LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H4M5LPS-13 reliable?

The price and inventory of DMT10H4M5LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H4M5LPS-13 is usually 5 days.

3.What payment methods are accepted for DMT10H4M5LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H4M5LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H4M5LPS-13?

DMT10H4M5LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H4M5LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H4M5LPS-13?

For technical support, including DMT10H4M5LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H4M5LPS-13 requirements.

6.How does Aetrix verify that DMT10H4M5LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT10H4M5LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H4M5LPS-13 meets industry standards.

7.What is the process for return or replacement of DMT10H4M5LPS-13?

All DMT10H4M5LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H4M5LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H4M5LPS-13 part is unused and in its original packaging.

Return procedure for DMT10H4M5LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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