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Diodes Incorporated DMT10H9M9LCT
- Part No.:
- DMT10H9M9LCT
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
DMT10H9M9LCT.pdf
- Description:
- MOSFET BVDSS: 61V~100V TO220AB T
- Quantity:
- Payment:
- Shipping:
Inventory:9,378
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Product details
Overview
DMT10H9M9LCT from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO220AB package, rated for 101A continuous drain current at TC = +25°C, with RDS(ON) of 8.5mΩ @ VGS = 10V and 14mΩ @ VGS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and motor control circuits.
For engineers reviewing the DMT10H9M9LCT datasheet, DMT10H9M9LCT pinout, DMT10H9M9LCT application, or DMT10H9M9LCT equivalent, key selection criteria include its 100V BVDSS rating, 0.8°C/W RθJC thermal resistance, integrated body diode with 14.9ns tRR, and RoHS-compliant lead-free TO220AB construction suitable for industrial power management designs.
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage switching with low gate charge (Qg = 40.2nC) and minimal reverse transfer capacitance (Crss = 15.7pF), enabling efficient operation in hard-switched topologies. Its VGS(TH) range of 1.3–2.5V ensures reliable turn-on with standard logic-level gate drivers.
Thermal design is supported by a low junction-to-case resistance (0.8°C/W) and robust avalanche capability (EAS = 66mJ, IAS = 21A), allowing sustained operation under transient overloads without external snubbers in motor drive and backlighting inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100V - Withstands up to 100V drain-source voltage before breakdown, enabling use in 48V and 60V bus systems. |
| RDS(ON) | 8.5mΩ @ VGS = 10V - Delivers <0.85W conduction loss at 10A, critical for thermally constrained power stages. |
| ID (Cont.) | 101A @ TC = +25°C - Supports high-current loads when mounted on heatsink; derates to 80A at TC = +70°C. |
| Qg | 40.2nC - Determines gate drive power requirement; enables <100kHz switching with moderate driver strength. |
| tRR | 14.9ns - Minimizes body diode recovery loss during synchronous rectification or freewheeling phases. |
| RθJC | 0.8°C/W - Enables direct thermal path to heatsink; allows >150W dissipation with ≤120°C junction rise above case. |
| VGS(TH) | 1.3–2.5V - Ensures full enhancement with 3.3V or 5V logic-level gate signals without level-shifting circuitry. |
Pinout & Package
Package: TO220AB - Molded plastic case with exposed drain tab (pin 2), matte tin-plated copper leadframe, UL 94V-0 rated, weight ≈1.85g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heatsink interface | Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground. |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for shunt resistor placement and gate return path. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <40.2nC charge for full enhancement; sensitive to ESD and ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 14mΩ enables direct drive from 5V microcontrollers in battery-powered motor controllers. |
| Low Ciss & Crss | 2309pF input capacitance and 15.7pF reverse transfer capacitance reduce Miller effect and improve switching stability. |
| High avalanche energy | 66mJ single-pulse EAS rating supports unclamped inductive switching in relay drivers and solenoid controls. |
| Green compound | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets environmental compliance mandates. |
| RoHS & lead-free | Fully compliant with EU RoHS 2015/863/EU; matte tin finish ensures solderability per MIL-STD-202, Method 208. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
|
Use Scenario: Brushed DC motor H-bridge half-bridge leg in industrial actuators and HVAC blowers. IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 10–30A peak currents at 24–48V bus. Use Value: 8.5mΩ RDS(ON) limits I²R loss to <7.7W at 30A, reducing heatsink size versus 12mΩ alternatives. |
Use Scenario: Primary-side switch in 100W isolated flyback or non-isolated buck converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main switching element operating at 65–100kHz with 50V–100V blocking capability. Use Value: 40.2nC Qg enables clean 10ns rise/fall times using 1A gate drivers, minimizing switching loss. |
| Backlighting Inverters | Power Management |
|
Use Scenario: High-voltage AC output stage in CCFL or LED backlight inverters for medical displays and industrial HMIs. IC Role / Device Role / Timing Role: Resonant half-bridge switch driving transformer primary with 100V peak reverse recovery stress. Use Value: 14.9ns tRR and soft-recovery body diode prevent voltage overshoot during zero-crossing commutation. |
Use Scenario: Load switch or OR-ing FET in redundant 48V telecom power distribution units. IC Role / Device Role / Timing Role: Hot-swap and fault-isolation device controlling power rail sequencing and reverse-current blocking. Use Value: 100V BVDSS withstands load-dump transients up to 85V; 101A rating supports 50A+ parallel configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | 100V, 110A, RDS(ON) = 7.5mΩ @ 10V; TO220FP package (insulated tab); higher Qg = 58nC | Requires insulated mounting; better conduction but slower switching due to higher gate charge | Prefer when thermal isolation is mandatory and switching frequency <50kHz |
| IRF540NPBF | 100V, 33A, RDS(ON) = 44mΩ @ 10V; TO220AB; Qg = 71nC; no specified tRR or EAS | Lower current rating and higher RDS(ON) limit usable power density; lacks avalanche rating | Acceptable only for low-power, non-critical linear or low-frequency switching where cost dominates |
Compared with STP110N10F7 and IRF540NPBF, DMT10H9M9LCT offers superior current density (101A vs. 110A/33A), lower gate charge than IRF540NPBF, and verified avalanche ruggedness absent in IRF540NPBF-making it optimal for compact, high-reliability 48V industrial power stages.
Availability
DMT10H9M9LCT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, backlighting inverters, and power management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMT10H9M9LCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and automotive markets with high-reliability components.
This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for efficiency-critical 48V–100V industrial power conversion and motor drive applications demanding low RDS(ON), fast switching, and robust thermal performance.
FAQ
What is the maximum safe operating temperature for DMT10H9M9LCT?
The device has an operating junction temperature range of –55°C to +150°C. When mounted on a heatsink with RθJA = 54°C/W (FR-4 board) or RθJC = 0.8°C/W (direct case cooling), maximum continuous power dissipation is 156W at TC = +25°C. Derating is required above +25°C case temperature per the datasheet's thermal curves.
Does DMT10H9M9LCT have a built-in body diode, and what are its characteristics?
Yes-it features an integrated intrinsic body diode with typical forward voltage VSD = 0.8V at IS = 13A and reverse recovery time tRR = 14.9ns at di/dt = 100A/µs. This enables use in freewheeling, synchronous rectification, and bidirectional current paths without external diodes in many topologies.
Can DMT10H9M9LCT be driven directly by a 3.3V microcontroller GPIO?
No-its VGS(TH) min is 1.3V, but full enhancement requires ≥4.5V to achieve RDS(ON) ≤14mΩ. A 3.3V signal yields partial turn-on and excessive conduction loss. A gate driver (e.g., TC4427) or level shifter is required for reliable 101A switching at low RDS(ON).
Is DMT10H9M9LCT qualified for automotive applications?
Per the datasheet, this part is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing-customers must contact Diodes directly for such variants. Standard DMT10H9M9LCT is intended for industrial and commercial use.
DMT10H9M9LCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2309 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta), 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
DMT10H9M9LCT FAQ
1.How can I place an order for DMT10H9M9LCT through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H9M9LCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H9M9LCT reliable?
The price and inventory of DMT10H9M9LCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H9M9LCT is usually 5 days.
3.What payment methods are accepted for DMT10H9M9LCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H9M9LCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H9M9LCT?
DMT10H9M9LCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H9M9LCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H9M9LCT?
For technical support, including DMT10H9M9LCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H9M9LCT requirements.
6.How does Aetrix verify that DMT10H9M9LCT is sourced from the original manufacturer or authorized distributors?
All DMT10H9M9LCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H9M9LCT meets industry standards.
7.What is the process for return or replacement of DMT10H9M9LCT?
All DMT10H9M9LCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H9M9LCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H9M9LCT part is unused and in its original packaging.
Return procedure for DMT10H9M9LCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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