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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H9M9SCT

Name: DMT10H9M9SCT
Brand: Diodes Incorporated
SKU: DMT10H9M9SCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H9M9SCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMT10H9M9SCT.pdf

Description:: MOSFET BVDSS: 61V~100V TO220AB T

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Product details

Overview

DMT10H9M9SCT from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in TO220AB package, delivering 99A continuous drain current at TC = +25°C, 8.8mΩ R_DS(ON) @ V_GS = 10V, and 1.7Ω gate resistance - optimized for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the DMT10H9M9SCT datasheet, DMT10H9M9SCT pinout, DMT10H9M9SCT application, or DMT10H9M9SCT equivalent, key selection criteria include its 100V BVDSS rating, low 7.2–8.8mΩ on-resistance at 10V drive, 2085pF Ciss, 0.8°C/W RθJC thermal resistance, and TO220AB mechanical compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs planar silicon process technology to achieve stable threshold voltage (2.1–3.9V) across -55°C to +150°C junction temperature range and supports fast switching with 9.7ns turn-on delay and 25.1ns turn-off delay under 50V/13A conditions. Its body diode exhibits 0.8–1.2V forward voltage at 13A and 45ns reverse recovery time.

The device integrates low-input-capacitance design (Ciss = 2085pF, Crss = 13pF) and robust avalanche capability (11A I_AS, 181.5mJ E_AS) for reliable operation in inductive load switching. Thermal performance is defined by 0.8°C/W junction-to-case resistance and 54°C/W junction-to-ambient rating on FR-4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100V - maximum blocking voltage before avalanche conduction; enables use in 48V industrial bus and 100V solar MPPT stages.
RDS(ON)	7.2–8.8mΩ @ VGS = 10V - determines conduction loss in high-current paths; yields <0.9W loss at 10A continuous drain.
ID (Cont.)	99A @ TC = +25°C - defines maximum steady-state current with heatsink; derates to 79A at TC = +70°C.
Ciss	2085pF - input capacitance governing gate drive energy and switching speed; impacts gate driver sizing and EMI behavior.
RθJC	0.8°C/W - thermal resistance from die to case surface; enables precise heatsink thermal design using measured case temperature.
VGS(TH)	2.1–3.9V - gate threshold range affecting logic-level drive compatibility and noise immunity in PWM gate circuits.
Qg	30nC - total gate charge defining driver power requirement and switching transition time at given gate resistance.

Pinout & Package

Package: TO220AB - through-hole, single-ended, isolated tab (drain-connected), 3-terminal plastic-molded power package with matte tin-plated copper leadframe; UL 94V-0 rated, 1.85g weight, compatible with standard TO220 heatsinks and mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to exposed metal tab	Provides low-inductance, high-current path and primary thermal conduction path to heatsink; requires electrical isolation when mounted.
Source	Reference node for gate drive and current return path	Serves as common reference for gate-source voltage control and carries full load current back to power rail; connects to ground or low-side switch node.
Gate	Control electrode for channel modulation	Receives voltage-controlled signal to turn MOSFET on/off; sensitive to ESD and ringing; requires series gate resistor (e.g., 6Ω) per datasheet test condition.

Key Features

Feature	Design Value
Low R_DS(ON) at 10V drive	Enables <1W conduction loss at 30A, reducing thermal stress in compact DC-DC converter designs.
High BVDSS with tight distribution	Guarantees 100V minimum breakdown across all units, supporting 48V automotive and industrial systems with margin.
Low Ciss and Crss	Reduces gate drive power and improves dv/dt immunity, critical for high-frequency synchronous rectification.
Robust avalanche rating	Withstands 181.5mJ single-pulse avalanche energy, enabling reliable operation in inductive switching without snubbers.
Lead-free, halogen-free "Green" construction	Meets RoHS 3 and IEC 61249-2-21 requirements; contains <900ppm Br/Cl and <1000ppm Sb for environmental compliance.

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge half-bridge leg in industrial actuators and HVAC blowers.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and speed via PWM.

Use Value: 8.8mΩ R_DS(ON) minimizes I²R heating during 20–50A peak currents, extending MOSFET lifetime under thermal cycling.

Use Scenario: Primary-side switch in 12V–48V input, 3.3V/5V/12V output non-isolated buck converters for server PSUs and telecom equipment.

IC Role / Device Role / Timing Role: Main power switch modulated at 200–500kHz to regulate output voltage.

Use Value: 30nC Qg and 2085pF Ciss support efficient high-frequency operation with minimal gate drive loss and EMI generation.

Backlighting

Power Management Functions

Use Scenario: LED string current regulation in large-panel LCD backlight drivers for commercial displays.

IC Role / Device Role / Timing Role: Constant-current switch in boost or SEPIC topology driving 10–20 strings of white LEDs.

Use Value: 100V BVDSS accommodates boost output voltages up to 85V, while low leakage (<1µA IDSS) ensures stable dimming at low duty cycles.

Use Scenario: Load switch for hot-swap and power sequencing in industrial PLC I/O modules and embedded controllers.

IC Role / Device Role / Timing Role: Controlled ON/OFF path for 12V/24V system rails with inrush current limiting.

Use Value: Fast 13.7ns rise time and 17.3ns fall time enable precise timing control during power-up/down sequences without overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	100V, 100A, 7.5mΩ @ 10V, TO220FP package (full-pack), higher RθJA (62°C/W)	Same voltage/current class but lower thermal efficiency due to insulated package; requires larger heatsink area	Select if full-pack isolation is mandatory and board space allows larger thermal solution.
IRF540NPBF	100V, 33A, 44mΩ @ 10V, TO220AB, older process with higher Qg (71nC)	Lower current rating and significantly higher conduction/switching losses; suitable only for <15A legacy designs	Choose only for cost-sensitive, low-power replacements where thermal headroom exists.

Compared with STP100N10F7 and IRF540NPBF, DMT10H9M9SCT delivers superior power density (99A/8.8mΩ vs. 33A/44mΩ), lower gate charge (30nC vs. 71nC), and better thermal coupling (0.8°C/W vs. 1.2°C/W) - making it optimal for space-constrained, high-efficiency 48V+ systems.

Availability

DMT10H9M9SCT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and backlighting applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for DMT10H9M9SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency power conversion in industrial, computing, and consumer applications where low R_DS(ON), fast switching, and rugged avalanche performance are critical.

FAQ

What is the maximum safe operating junction temperature for DMT10H9M9SCT?

The absolute maximum junction temperature is +150°C, and the device is characterized for guaranteed operation across -55°C to +150°C. Derating curves in Figure 5 and Figure 7 confirm R_DS(ON) remains within specification up to this limit, provided thermal design maintains TJ ≤ 150°C under worst-case power dissipation.

Can DMT10H9M9SCT be driven directly from a 3.3V microcontroller GPIO?

No - its V_GS(TH) range (2.1–3.9V) means marginal turn-on at 3.3V, resulting in high R_DS(ON) (>100mΩ) and excessive conduction loss. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required to deliver ≥10V gate drive for full enhancement.

Is DMT10H9M9SCT qualified for automotive applications?

Per the datasheet note, this part is not pre-qualified to AEC-Q101. For automotive use, Diodes offers variant DMT10H9M9SCT-A (AEC-Q101 qualified, PPAP-capable, manufactured in IATF 16949 facilities); contact Diodes or Aetrix for qualification documentation and change control support.

How does the TO220AB package's thermal performance compare to TO220FP?

TO220AB has direct metal tab (drain) contact for thermal conduction, achieving 0.8°C/W RθJC, whereas TO220FP uses insulated plastic over the tab, increasing RθJC to ~1.2°C/W. This makes TO220AB more thermally efficient but requires electrical isolation between tab and heatsink in most designs.

DMT10H9M9SCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2085 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMT10H9M9SCT FAQ

1.How can I place an order for DMT10H9M9SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H9M9SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H9M9SCT reliable?

The price and inventory of DMT10H9M9SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H9M9SCT is usually 5 days.

3.What payment methods are accepted for DMT10H9M9SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H9M9SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H9M9SCT?

DMT10H9M9SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H9M9SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H9M9SCT?

For technical support, including DMT10H9M9SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H9M9SCT requirements.

6.How does Aetrix verify that DMT10H9M9SCT is sourced from the original manufacturer or authorized distributors?

All DMT10H9M9SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H9M9SCT meets industry standards.

7.What is the process for return or replacement of DMT10H9M9SCT?

All DMT10H9M9SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H9M9SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H9M9SCT part is unused and in its original packaging.

Return procedure for DMT10H9M9SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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