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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H9M9SH3

Name: DMT10H9M9SH3
Brand: Diodes Incorporated
SKU: DMT10H9M9SH3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H9M9SH3

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: DMT10H9M9SH3.pdf

Description:: MOSFET BVDSS: 61V~100V TO251 TUB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT10H9M9SH3 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO251 (TH3) package, delivering 9 mΩ R_DS(ON) at V_GS = 10 V and 84 A continuous drain current at T_C = +25°C. It features low input capacitance (C_iss = 2085 pF), fast switching (t_F = 17.3 ns), and integrated body diode with V_SD = 0.8–1.2 V at 13 A - optimized for motor control and LED backlighting power stages.

For engineers reviewing the DMT10H9M9SH3 datasheet, DMT10H9M9SH3 pinout, DMT10H9M9SH3 application, or DMT10H9M9SH3 equivalent, key selection criteria include verified R_DS(ON) @ 6 V/10 V, thermal resistance R_θJC = 1.1 °C/W, avalanche energy E_AS = 181.5 mJ, gate charge Q_g = 30 nC, and TO251 mechanical compatibility with PCB layout constraints.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining robust switching performance and avalanche ruggedness. Its gate threshold voltage (V_GS(TH) = 2–4 V) enables reliable turn-on with standard 5 V or 3.3 V logic-level drivers, and its low C_oss (609 pF) minimizes switching losses during hard-switched operation.

The device integrates a fast-recovery body diode (t_RR = 45 ns, Q_RR = 68 nC) suitable for synchronous rectification and freewheeling in DC-DC converters and motor H-bridges. Thermal design is supported by a low junction-to-case resistance (1.1 °C/W) and operation up to +150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage for high-side switch applications in 48 V industrial systems or automotive subsystems.
R_DS(ON)	9 mΩ @ V_GS = 10 V, I_D = 20 A - Enables <1.8 W conduction loss at 45 A, critical for thermally constrained motor drives.
I_D (continuous)	84 A @ T_C = +25°C - Supports high-current load switching without external heatsink when mounted on infinite heatsink.
Q_g	30 nC - Determines gate drive power requirement; compatible with standard 1 A peak gate drivers for ≤500 kHz operation.
E_AS	181.5 mJ - Confirmed single-pulse avalanche capability ensures reliability under inductive load turn-off stress.
R_θJC	1.1 °C/W - Enables precise junction temperature estimation using case temperature measurement in thermal management.
t_F	17.3 ns - Fast fall time reduces switching transition losses in high-frequency PWM applications like backlight inverters.

Pinout & Package

Package: TO251 (Type TH3), surface-mount, 3-terminal molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated; weight ≈ 0.33 g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Exposed metal tab is electrically connected to Drain - must be isolated from heatsink unless referenced to same potential.
Source	Current return path / reference node	Common connection point for gate driver return and load ground; defines V_GS reference.
Gate	Control terminal	High-impedance input requiring low-inductance routing; sensitive to ESD and ringing due to R_G = 1.7 Ω intrinsic resistance.

Key Features

Feature	Design Value
Low R_DS(ON) @ 6 V	14 mΩ - Ensures usable conduction performance with 5 V microcontroller GPIO or level-shifted gate drive.
Low C_iss	2085 pF - Reduces Miller effect and gate drive power, enabling efficient operation above 200 kHz.
Avalanche-rated	E_AS = 181.5 mJ - Eliminates need for external snubbers in inductive load switching circuits.
Green compound	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Meets IPC-1752A material declaration requirements.
RoHS 3 compliant	EU Directive 2015/863/EU - Qualified for consumer, industrial, and automotive supply chains requiring full substance compliance.

Applications

Motor Control

LED Backlighting

Use Scenario: High-side switch in 24–48 V brushed DC motor driver for HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: Power switch controlling motor direction and speed via PWM at 20–50 kHz.

Use Value: Low R_DS(ON) minimizes I²R heating at 60 A peak; fast t_F and low Q_g reduce switching loss at 30 kHz PWM.

Use Scenario: Boost converter main switch in LCD TV backlight inverter with 100 V output bus.

IC Role / Device Role / Timing Role: Primary switching element in hard-switched boost topology operating at 250 kHz.

Use Value: 100 V V_DSS provides margin over 85 V boost rail; low C_oss improves efficiency at high frequency.

Industrial Power Supplies

Automotive Body Electronics

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom DC-DC module with 12 V output.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode in LLC resonant converter.

Use Value: Integrated body diode with t_RR = 45 ns supports ZVS/ZCS transitions; R_DS(ON) cuts conduction loss by >60% vs. 40 V Schottky.

Use Scenario: Load switch for 12 V battery-fed cabin lighting and mirror heater circuits.

IC Role / Device Role / Timing Role: Protected high-current switch with controlled turn-on slew rate and thermal shutdown.

Use Value: 84 A rating handles 150% surge loads; R_θJC = 1.1 °C/W enables accurate thermal derating per AEC-Q101 guidelines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP110N10T	R_DS(ON) = 10.5 mΩ @ 10 V; higher Q_g = 42 nC; TO220 package	Requires through-hole mounting and larger heatsink footprint; slower switching	Preferred where board space allows through-hole assembly and lower cost outweighs efficiency gain
STP100N10F7	R_DS(ON) = 8.5 mΩ @ 10 V; lower R_θJC = 0.9 °C/W; TO220FP package	Higher thermal performance but non-isolated tab; not RoHS 3 compliant	Selected when maximum thermal headroom is required and halogen-free compliance is not mandated

Compared with IXTP110N10T and STP100N10F7, DMT10H9M9SH3 offers superior surface-mount integration, full RoHS 3 compliance, and balanced trade-offs between conduction loss, switching speed, and thermal resistance - making it optimal for space-constrained, high-efficiency industrial and automotive modules.

Availability

DMT10H9M9SH3 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for DMT10H9M9SH3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in industrial, automotive, and consumer applications - emphasizing low R_DS(ON), fast switching, and robust avalanche performance.

FAQ

Is DMT10H9M9SH3 qualified for automotive applications?

No - DMT10H9M9SH3 is not AEC-Q101 qualified. While it meets RoHS 3 and green compound requirements, Diodes states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing - which this part does not carry. For automotive use, contact Diodes directly for qualified alternatives such as the DMT10H9M9SH3-A.

What is the maximum safe operating temperature for DMT10H9M9SH3?

The absolute maximum junction temperature is +150°C, and the storage temperature range is –55°C to +150°C. Operation above +150°C risks permanent degradation. Derating curves in Figure 5 and Figure 6 confirm R_DS(ON) increases by ~2× from –55°C to +150°C at fixed V_GS, requiring thermal design to maintain T_J ≤ 125°C for long-term reliability.

Can DMT10H9M9SH3 be used with 5 V gate drive?

Yes - V_GS(TH) is 2–4 V, and R_DS(ON) is specified at 14 mΩ @ V_GS = 6 V and I_D = 5 A. At 5 V, typical R_DS(ON) is ~16–18 mΩ (per Figure 3), supporting moderate-current switching (≤40 A) with acceptable conduction loss in non-critical thermal environments.

Does DMT10H9M9SH3 have an integrated ESD protection diode on the gate?

No - the datasheet does not specify gate ESD protection. The gate-source leakage I_GSS is rated at ±100 nA at ±20 V, and no human-body-model (HBM) or charged-device-model (CDM) ESD rating is provided. External gate protection (e.g., 12 V Zener clamp) is recommended for handling and PCB assembly in uncontrolled ESD environments.

DMT10H9M9SH3 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2085 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

DMT10H9M9SH3 FAQ

1.How can I place an order for DMT10H9M9SH3 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H9M9SH3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H9M9SH3 reliable?

The price and inventory of DMT10H9M9SH3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H9M9SH3 is usually 5 days.

3.What payment methods are accepted for DMT10H9M9SH3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H9M9SH3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H9M9SH3?

DMT10H9M9SH3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H9M9SH3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H9M9SH3?

For technical support, including DMT10H9M9SH3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H9M9SH3 requirements.

6.How does Aetrix verify that DMT10H9M9SH3 is sourced from the original manufacturer or authorized distributors?

All DMT10H9M9SH3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H9M9SH3 meets industry standards.

7.What is the process for return or replacement of DMT10H9M9SH3?

All DMT10H9M9SH3 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H9M9SH3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H9M9SH3 part is unused and in its original packaging.

Return procedure for DMT10H9M9SH3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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