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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT12H007SPS-13

Name: DMT12H007SPS-13
Brand: Diodes Incorporated
SKU: DMT12H007SPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT12H007SPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT12H007SPS-13.pdf

Description:: MOSFET BVDSS: 101V~250V POWERDI5

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Product details

Overview

DMT12H007SPS from Diodes Incorporated is a 120V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 80A continuous drain current at TC = +25°C, with RDS(ON) of 7.5 mΩ (typ) at VGS = 10V and 12 mΩ (typ) at VGS = 6V. It delivers high-efficiency power switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the DMT12H007SPS datasheet, DMT12H007SPS pinout, DMT12H007SPS application, or DMT12H007SPS equivalent, key selection criteria include its 1.2°C/W junction-to-case thermal resistance, 100% production-tested UIS robustness, low-profile 1.1mm height, and AEC-Q101 readiness for automotive-grade power stages.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching performance-evidenced by 44 nC total gate charge at VGS = 10V and 10.9 ns turn-off fall time. Its internal body diode supports synchronous rectification with 0.8 V forward voltage (typ) at IS = 30A and 55 ns reverse recovery time.

The device operates across –55°C to +150°C junction temperature range and features a thermally enhanced exposed-drain PowerDI5060-8 package with 1.2°C/W RθJC, enabling high-current operation without external heatsinking in compact board layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	120 V - Withstands up to 120V drain-source blocking voltage in off-state, suitable for 48V and 60V bus systems.
R_DS(ON)	7.5 mΩ (typ) @ V_GS = 10V - Minimizes conduction loss in high-current paths; enables <1.5W dissipation at 60A.
I_D (cont)	80 A @ T_C = +25°C - Supports high-power output stages when mounted on adequate copper area.
Q_g	44 nC @ V_GS = 10V - Determines gate drive energy requirement; compatible with standard PWM controllers.
R_θJC	1.2°C/W - Enables direct thermal coupling to PCB copper or heatsink; critical for thermal management in sealed enclosures.
E_AS	360.4 mJ - Confirmed avalanche energy rating ensures reliability under inductive load switching stress.
t_RR	55 ns - Fast body diode recovery reduces cross-conduction loss in synchronous buck topologies.

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad, 1.1 mm profile, and UL 94V-0 molded compound. Dimensions: 5.15 × 6.15 mm footprint, 1.0 mm nominal height.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current path (high-side or low-side switch)	Connected to exposed copper pad; primary thermal and electrical path for drain current.
Pin 2 (Source)	Reference node for gate control and current return	Provides low-inductance source connection; ties to ground plane or power rail return.
Pin 3 (Gate)	Control input for channel modulation	High-impedance terminal requiring <2.7Ω series resistance to damp ringing per layout guidelines.
Exposed Pad (Drain)	Primary drain terminal and thermal interface	Mandatory solder connection to large PCB copper pour for thermal and current handling.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness without derating; eliminates need for external snubbers in flyback or boost converters.
Thermally efficient PowerDI5060-8	1.2°C/W R_θJC enables >80A operation with minimal board-level thermal design overhead.
Low-profile 1.1 mm height	Enables use in ultra-thin power modules and space-constrained consumer/industrial enclosures.
Halogen- and antimony-free "Green" construction	Meets IEC 61249-2-21 and JEDEC J-STD-020 Level 1 standards for eco-compliant manufacturing.

Applications

Server VRM Power Stage

Automotive DC-DC Converter

Use Scenario: High-current, high-frequency buck converter supplying core voltage to CPU/GPU in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with tight duty-cycle control.

Use Value: 7.5 mΩ R_DS(ON) reduces conduction loss by >30% vs. legacy 12V MOSFETs, improving VRM efficiency above 94% at full load.

Use Scenario: 12V-to-48V bidirectional DC-DC stage in 48V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Primary switching element in interleaved phase-leg topology, handling 60A+ continuous current.

Use Value: 100% UIS qualification and –55°C to +150°C operation ensure reliability across engine bay thermal cycling and load dump transients.

Industrial Motor Drive Inverter

Telecom PSU Half-Bridge

Use Scenario: Three-phase inverter stage driving BLDC motors in HVAC compressors and factory automation drives.

IC Role / Device Role / Timing Role: High-side and low-side switch in 600V-class half-bridge modules, operating at 20–40 kHz PWM frequency.

Use Value: 360.4 mJ E_AS withstands motor winding inductance energy during fault conditions without failure.

Use Scenario: Primary-side switch in 3 kW telecom rectifier with LLC resonant topology.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in high-frequency half-bridge configuration with zero-voltage switching (ZVS).

Use Value: 55 ns t_RR and low Crss (29 pF) minimize dead-time losses and improve ZVS margin at light loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(ON) N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N15N3 G	R_DS(ON) = 1.8 mΩ @ 10V but rated only for 150V; larger TO-263-7 package (4.7 mm height); higher Q_g (120 nC).	Better for ultra-low-loss 12V/24V systems; unsuitable where board height <1.2 mm is mandatory.	Select when lowest possible conduction loss dominates over profile and gate drive strength.
DMTH10H015LPS-13	Same PowerDI5060-8 package; 100V rating; R_DS(ON) = 1.5 mΩ @ 10V; lower V_DSS limits bus voltage headroom.	Preferred for cost-sensitive 48V systems where 120V rating is unnecessary; reduced avalanche margin.	Choose when system max V_DS stays below 80V and thermal budget allows tighter R_DS(ON) trade-off.

Compared with IPB180N15N3G and DMTH10H015LPS-13, DMT12H007SPS uniquely balances 120V rating, sub-8mΩ R_DS(ON), 1.1mm profile, and production UIS validation-making it optimal for space-constrained, high-reliability 48–60V industrial and automotive power stages.

Availability

DMT12H007SPS is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned quality assurance.

Supply support for DMT12H007SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for DMT12H007SPS at 70°C case temperature?

The datasheet specifies 64 A continuous drain current at TC = +70°C with VGS = 10V. This derating reflects thermal limits of the PowerDI5060-8 package and must be validated against actual PCB copper area and ambient airflow in the target application.

Does DMT12H007SPS meet AEC-Q101 requirements for automotive use?

Yes-Diodes states this part is manufactured in IATF 16949-certified facilities and supports PPAP documentation; it is qualified per AEC-Q101 for stress testing including HTGB, HTRB, and UIS. Full qualification reports are available upon request through Diodes' automotive team.

How should the exposed drain pad be connected on the PCB?

The exposed pad must be soldered to a minimum 100 mm² copper area with ≥4 thermal vias (0.3 mm diameter) connecting to inner or back-side ground/power planes. Solder mask opening should match pad dimensions exactly to ensure full wetting and thermal transfer per Diodes' recommended land pattern.

What is the gate threshold voltage range, and how does it vary with temperature?

VGS(TH) is specified from 2.0 V to 4.0 V at TA = +25°C, with typical variation of ±0.2 V across –55°C to +150°C. Figure 8 shows VGS(TH) decreases slightly with rising temperature, supporting stable turn-on behavior in high-temperature environments.

DMT12H007SPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3142 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 2.9W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMT12H007SPS-13 FAQ

1.How can I place an order for DMT12H007SPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT12H007SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT12H007SPS-13 reliable?

The price and inventory of DMT12H007SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT12H007SPS-13 is usually 5 days.

3.What payment methods are accepted for DMT12H007SPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT12H007SPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT12H007SPS-13?

DMT12H007SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT12H007SPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT12H007SPS-13?

For technical support, including DMT12H007SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT12H007SPS-13 requirements.

6.How does Aetrix verify that DMT12H007SPS-13 is sourced from the original manufacturer or authorized distributors?

All DMT12H007SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT12H007SPS-13 meets industry standards.

7.What is the process for return or replacement of DMT12H007SPS-13?

All DMT12H007SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT12H007SPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT12H007SPS-13 part is unused and in its original packaging.

Return procedure for DMT12H007SPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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