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Diodes Incorporated DMT12H060LFDF-13
- Part No.:
- DMT12H060LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT12H060LFDF-13.pdf
- Description:
- MOSFET BVDSS: 101V~250V U-DFN202
- Quantity:
- Payment:
- Shipping:
Inventory:9,863
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Product details
Overview
DMT12H060LFDF-13 from Diodes Incorporated is a 115V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for low RDS(ON) (65 mΩ @ VGS = 4.5V) and fast switching in compact power management circuits. It delivers 4.4A continuous drain current at TA = +25°C and supports battery-operated systems, solid-state relays, and load-switching applications requiring high efficiency and space-constrained layouts.
For engineers reviewing the DMT12H060LFDF-13 datasheet, DMT12H060LFDF-13 pinout, DMT12H060LFDF-13 application, or DMT12H060LFDF-13 equivalent, key selection criteria include its 0.6 mm profile, 4 mm² PCB footprint, 100% production-tested UIS robustness, ESD protection (HBM Class C), and thermal resistance of 110 °C/W on standard FR-4.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining controlled gate charge (Qg = 7.8 nC) and fast switching (tr = 2 ns, tf = 8 ns). Its gate threshold voltage (VGS(TH) = 0.5–1.4 V) enables reliable turn-on with low-voltage logic drivers (e.g., 2.5 V or 3.3 V microcontrollers).
The integrated body diode exhibits VSD = 0.63–1.0 V at IS = 1 A and tRR = 24 ns, supporting moderate-frequency freewheeling in DC-DC converters and relay drivers. Thermal design is enabled by RθJC = 8 °C/W and validated junction temperature range of –55°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 115 V - Supports input rails up to 92 V DC with 20% margin before avalanche onset. |
| RDS(ON) | 65 mΩ @ VGS = 4.5 V - Enables ≤280 mW conduction loss at 4.4 A, critical for thermally constrained PCBs. |
| ID (continuous) | 4.4 A @ TA = +25°C - Sustains full-load current without heatsink on minimal copper area (2 oz FR-4). |
| Qg | 7.8 nC - Low gate drive energy reduces driver IC loading and improves efficiency in 100–500 kHz switching. |
| RθJA | 110 °C/W - Defines thermal derating: max 3.6 A at TA = +70°C with standard layout per datasheet Note 5. |
| EAS | 21.6 mJ - Confirmed single-pulse avalanche capability ensures reliability during inductive load turn-off transients. |
| HBM ESD | Class C - Withstands ≥2 kV human-body model stress without parameter shift, reducing board-level protection needs. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, 0.65 mm pitch, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top View, Marked) | Gate (G) | Control terminal; requires <±8 V rating; low Rg = 4.5 Ω minimizes ringing in high-dV/dt environments. |
| Pins 2 & 3 | Source (S) | Power return path; dual-source pins reduce loop inductance and improve current sharing in high-di/dt switching. |
| Pins 4 & 5 | Drain (D) | Main power output node; connected to internal die backside; must be routed with low-inductance copper pour. |
| Pin 6 (Exposed Pad) | Thermal Pad / Drain | Electrically tied to Drain; primary heat path to PCB; requires soldered thermal land for RθJA = 110 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile package | 0.6 mm height enables use in ultra-thin portable devices and stacked PCB assemblies. |
| Minimal PCB footprint | 4 mm² area reduces board real estate cost and supports dense power stage integration. |
| Production-tested UIS | 100% unclamped inductive switching validation ensures end-equipment robustness against load dump or relay bounce. |
| Green compound | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A Tier 1 compliance. |
| Lead-free & RoHS 3 | Fully compliant with EU Directive 2015/863/EU; no intentionally added lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE. |
Applications
| Battery-Powered Load Switch | Solid-State Relay Replacement |
|---|---|
|
Use Scenario: Power gating of peripherals (e.g., GPS module, sensor array) in handheld medical monitors operating from 3.7 V Li-ion cells. IC Role / Device Role / Timing Role: High-side load switch controlled by MCU GPIO; operates in linear and saturation regions during soft-start and steady-state. Use Value: 65 mΩ RDS(ON) limits dropout to <290 mV at 4.4 A, preserving battery runtime; 0.6 mm profile fits under display bezel. |
Use Scenario: Replacing electromechanical relays in HVAC control panels where coil drive power, size, and lifetime are critical constraints. IC Role / Device Role / Timing Role: Low-side switch driving 24 V AC solenoid valves; handles repetitive 10 A inrush with 21.6 mJ avalanche energy margin. Use Value: Eliminates contact wear and acoustic noise; 100% UIS testing guarantees >10⁶ cycles under inductive load stress. |
| LED Backlight Driver | USB-C Power Path Control |
|
Use Scenario: PWM dimming control of white LED strings (12 V, 2 A) in automotive infotainment displays. IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter output stage; switches at 200 kHz with tr/tf ≤ 10 ns. Use Value: Low Qgd = 3.0 nC minimizes Miller-induced shoot-through risk; Ciss = 475 pF stabilizes gate drive loop. |
Use Scenario: Input power path selection between USB-C PD source and internal battery in portable test equipment. IC Role / Device Role / Timing Role: Reverse-voltage protected, bidirectional load switch managing 5–20 V, 3 A power routing with fast fault response. Use Value: Body diode VSD = 0.63 V enables low-loss reverse conduction; ESD Class C withstands hot-plug transients without external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H060LFD-7 | Lower VDSS = 100 V; identical RDS(ON) = 65 mΩ @ 4.5 V; same U-DFN2020-6 package. | Not suitable for 115 V bus designs; acceptable only where max input ≤ 80 V DC. | Select when system voltage headroom allows tighter VDSS margin and cost optimization is prioritized. |
| AO3414 | VDSS = 40 V; RDS(ON) = 50 mΩ @ 4.5 V; SOT-23 package; higher RθJA = 200 °C/W. | Limited to ≤32 V applications; unsuitable for thermal-limited 4.4 A loads due to smaller package. | Choose only for low-voltage, low-current (<1 A) logic-level switching where board space permits SOT-23. |
Compared with DMT12H060LFDF-13, DMN10H060LFD-7 trades voltage margin for cost parity in sub-100 V systems, while AO3414 sacrifices both voltage rating and thermal capability for legacy package compatibility-neither matches the 115 V/4.4 A/0.6 mm combination.
Availability
DMT12H060LFDF-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and LED backlight drivers requiring stable component supply across industrial, medical, and consumer electronics programs.
Supply support for DMT12H060LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for space-constrained, high-efficiency DC power control in portable and automotive-adjacent applications where low gate drive voltage and thermal performance are critical.
FAQ
What is the maximum safe operating voltage for DMT12H060LFDF-13 in continuous DC applications?
The absolute maximum drain-source voltage (VDSS) is 115 V, but continuous operation should remain ≤92 V to maintain 20% margin below breakdown, as specified in the datasheet's OFF CHARACTERISTICS table (BVDSS = 115 V at ID = 10 µA). Exceeding 92 V risks parametric drift or avalanche conduction under temperature variation.
Can DMT12H060LFDF-13 be driven directly by a 3.3 V microcontroller GPIO?
Yes. Its gate threshold voltage (VGS(TH)) ranges from 0.5 V to 1.4 V, and RDS(ON) is fully specified at VGS = 2.5 V (70 mΩ) and 4.5 V (65 mΩ). At 3.3 V, typical RDS(ON) falls between these values (~60–68 mΩ), enabling reliable saturation with 4.4 A ID while staying within safe SOA limits.
Is the exposed thermal pad electrically isolated or connected internally?
The exposed pad (Pin 6) is electrically connected to the Drain terminal, as confirmed by the Equivalent Circuit diagram and Package Outline drawing in DS42757 Rev. 3–2. It must be soldered to a PCB copper pour tied to the Drain net to achieve the rated RθJA = 110 °C/W and prevent thermal runaway.
Does DMT12H060LFDF-13 require external gate resistors for EMI control in 200 kHz switching?
A gate resistor is recommended: the datasheet specifies Rg = 4.5 Ω (typical), and simulation data shows tr/tf ≤ 10 ns at RGEN = 3 Ω. For EMI suppression at 200 kHz, a 10–22 Ω series resistor dampens ringing without compromising efficiency-verified by Figure 11's Qg vs. VGS curve and SOA derating in Figure 12.
DMT12H060LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 115 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.8 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 475 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT12H060LFDF-13 FAQ
1.How can I place an order for DMT12H060LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT12H060LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT12H060LFDF-13 reliable?
The price and inventory of DMT12H060LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT12H060LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT12H060LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT12H060LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT12H060LFDF-13?
DMT12H060LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT12H060LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT12H060LFDF-13?
For technical support, including DMT12H060LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT12H060LFDF-13 requirements.
6.How does Aetrix verify that DMT12H060LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT12H060LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT12H060LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT12H060LFDF-13?
All DMT12H060LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT12H060LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT12H060LFDF-13 part is unused and in its original packaging.
Return procedure for DMT12H060LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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