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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT12H090LFDF4-13

Name: DMT12H090LFDF4-13
Brand: Diodes Incorporated
SKU: DMT12H090LFDF4-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT12H090LFDF4-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-PowerXDFN

Datasheet:: DMT12H090LFDF4-13.pdf

Description:: MOSFET N-CH 115V 3.4A 6DFN

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Product details

Overview

DMT12H090LFDF4-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET rated for 115V V_DSS, 90mΩ R_DS(ON) at V_GS = 10V, and 3.4A continuous drain current at T_A = +25°C. It features a 0.4mm profile X2-DFN2020-6 (Type W) package and is optimized as a primary switch in compact DC-DC converters.

For engineers reviewing the DMT12H090LFDF4-13 datasheet, DMT12H090LFDF4-13 pinout, DMT12H090LFDF4-13 application, or DMT12H090LFDF4-13 equivalent, key selection criteria include its low-profile 2.0×2.0mm footprint, 100% production-tested UIS robustness, 78°C/W R_θJA with thermal pad, and gate threshold voltage range of 0.6–2.2V enabling 3.3V/4.5V logic-level drive compatibility.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 2.2ns, t_F = 3.9ns, and Q_g = 6nC at V_DS = 50V. Its body diode exhibits t_RR = 83ns and Q_RR = 189nC under IF = 4.5A, di/dt = 300A/μs conditions.

The device is characterized for operation across –55°C to +150°C junction temperature, with R_DS(ON) normalized variation ≤1.8× over that range at V_GS = 10V. It supports unclamped inductive switching up to I_AS = 2.3A and E_AS = 0.79mJ, verified per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	115V - Maximum blocking voltage before avalanche onset; suitable for 48V bus systems with margin
R_DS(ON)	90mΩ @ V_GS = 10V - Enables <100mW conduction loss at 3.4A; critical for high-efficiency power stages
I_D (continuous)	3.4A @ T_A = +25°C - Validated with 1-inch² copper pad; derates to 2.7A at +70°C ambient
Q_g	6nC - Low gate charge reduces driver power and enables efficient 1MHz+ switching in synchronous buck topologies
R_θJA	78°C/W - Measured with enhanced thermal pad layout; enables 1.6W dissipation at +25°C ambient
t_RR	83ns - Fast body diode recovery minimizes shoot-through risk and switching losses in half-bridge configurations
V_GS(TH)	0.6–2.2V - Guaranteed turn-on with 3.3V logic; ensures reliable gate drive without level-shifting circuitry

Pinout & Package

Package: X2-DFN2020-6 (Type W), 2.0mm × 2.0mm × 0.4mm, thermally enhanced with exposed drain pad. Molded green compound, UL 94V-0 rated, MSL Level 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Top View, Marking Side)	Gate (G)	Control terminal; requires <6nC total charge for full enhancement; sensitive to ESD (±12V max rating)
Pins 2 & 3 (Top View)	Source (S)	Return path for channel current; tied to PCB ground plane; forms cathode of integrated body diode
Pins 4, 5 & 6 (Top View)	Drain (D)	Main power output terminal; electrically connected to exposed copper pad on bottom surface for thermal conduction

Key Features

Feature	Design Value
0.4mm profile	Enables ultra-thin power modules and space-constrained portable electronics where Z-height is limited to <0.5mm
4mm² PCB footprint	Reduces board area by >50% vs. SO-8 equivalents; supports dense multi-phase VRM layouts
100% UIS tested	Guarantees survivability under worst-case inductive turn-off events without derating or external snubbers
NiPdAu-plated terminals	Ensures solder joint reliability and wire-bond compatibility; compliant with MIL-STD-202 Method 208
Halogen & antimony free	Meets automotive "Green" requirements (<900ppm Br, <900ppm Cl, <1000ppm Sb); supports RoHS 3 compliance

Applications

DC-DC Primary Switch

Load Switch

Use Scenario: High-frequency synchronous buck converter in USB-C PD power adapters delivering 20–65W.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input to output inductor; operates at 500kHz–1MHz.

Use Value: 90mΩ R_DS(ON) and 6nC Q_g minimize both conduction and switching losses, enabling >95% efficiency at full load.

Use Scenario: Hot-swap power rail control in industrial IoT edge nodes with 12–48V input.

IC Role / Device Role / Timing Role: Inrush-limited main power switch activated by microcontroller GPIO; handles steady-state loads up to 2.3A.

Use Value: 0.6–2.2V V_GS(TH) allows direct 3.3V MCU drive; 0.4mm height prevents interference with stacked connectors.

Battery Protection Circuit

LED Driver Switch

Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs for power tools.

IC Role / Device Role / Timing Role: Discharge path switch placed between battery pack and load; responds to protection IC fault signals.

Use Value: 100% UIS qualification ensures survival during sudden cable disconnect events; 115V rating covers battery stack transients.

Use Scenario: Constant-current dimming switch in automotive interior LED lighting modules (map lights, footwell).

IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness at 1–20kHz.

Use Value: Fast 83ns t_RR prevents LED current distortion during high-frequency PWM; 150°C max T_J supports under-hood thermal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT12H090LSDQ-7	Same die, but in X2-DFN2020-6 (Type Q) package with different pinout (G-S-D vs G-S-D-D-D)	Requires PCB redesign due to altered terminal mapping; no change in electrical performance	Select only if legacy board uses Type Q footprint and sourcing constraints prevent redesign
DMN10H090LSDQ-7	100V V_DSS, identical R_DS(ON)/Q_g, same package; lower voltage rating	Suitable only for ≤36V systems; not recommended for 48V or PoE++ applications	Choose when system maximum bus voltage is confirmed ≤36V and cost sensitivity outweighs voltage margin needs

Compared with DMT12H090LFDF4-13, the DMT12H090LSDQ-7 offers identical performance but demands layout revision, while the DMN10H090LSDQ-7 trades 15V voltage headroom for potential cost savings in lower-voltage designs.

Availability

DMT12H090LFDF4-13 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap load switches, and battery protection circuits requiring stable component supply and consistent thermal performance across production volumes.

Supply support for DMT12H090LFDF4-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power conversion in consumer, industrial, and automotive applications where low R_DS(ON), fast switching, and thermal reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for DMT12H090LFDF4-13?

The absolute maximum V_GS rating is ±12V, as specified in the Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤10V for full enhancement and ≥3.3V for guaranteed turn-on, given the 0.6–2.2V V_GS(TH) range.

Does DMT12H090LFDF4-13 require a heatsink in typical applications?

No external heatsink is required. With R_θJA = 78°C/W on a 1-inch² copper pad, the device dissipates up to 1.6W at +25°C ambient. At 3.4A and 90mΩ, conduction loss is ~1.04W - resulting in ~81°C junction rise, well below the 150°C limit. Thermal relief via PCB copper is sufficient.

Can DMT12H090LFDF4-13 be used in automotive applications?

This specific variant is not AEC-Q101 qualified. While it meets RoHS 3 and halogen-free requirements, Diodes states that automotive-grade versions require explicit PPAP capability and IATF 16949 manufacturing - contact Diodes directly for qualified alternatives like the DMT12H090LFDF4Q-13 (AEC-Q101 option).

How does the body diode performance impact synchronous rectification use?

The body diode's t_RR = 83ns and Q_RR = 189nC are measured under standardized conditions (IF = 4.5A, di/dt = 300A/μs). In synchronous rectifier roles, this enables clean commutation with minimal reverse recovery loss - but external Schottky diodes remain preferred for highest-efficiency 1MHz+ designs due to lower Q_RR.

DMT12H090LFDF4-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-PowerXDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 115 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 3V, 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 251 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN2020-6

DMT12H090LFDF4-13 FAQ

1.How can I place an order for DMT12H090LFDF4-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT12H090LFDF4-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT12H090LFDF4-13 reliable?

The price and inventory of DMT12H090LFDF4-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT12H090LFDF4-13 is usually 5 days.

3.What payment methods are accepted for DMT12H090LFDF4-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT12H090LFDF4-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT12H090LFDF4-13?

DMT12H090LFDF4-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT12H090LFDF4-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT12H090LFDF4-13?

For technical support, including DMT12H090LFDF4-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT12H090LFDF4-13 requirements.

6.How does Aetrix verify that DMT12H090LFDF4-13 is sourced from the original manufacturer or authorized distributors?

All DMT12H090LFDF4-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT12H090LFDF4-13 meets industry standards.

7.What is the process for return or replacement of DMT12H090LFDF4-13?

All DMT12H090LFDF4-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT12H090LFDF4-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT12H090LFDF4-13 part is unused and in its original packaging.

Return procedure for DMT12H090LFDF4-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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