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Diodes Incorporated DMT12H090LFDF4-7
- Part No.:
- DMT12H090LFDF4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerXDFN
- Datasheet:
-
DMT12H090LFDF4-7.pdf
- Description:
- MOSFET N-CH 115V 3.4A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,980
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Product details
Overview
DMT12H090LFDF4-7 from Diodes Incorporated is a 115V N-channel enhancement-mode MOSFET in X2-DFN2020-6 (Type W) package, rated for 3.4A continuous drain current at 25°C, with RDS(ON) = 90mΩ @ VGS = 10V and 100mΩ @ VGS = 4.5V, designed as a primary switch in DC-DC converters and load switch in space-constrained power rails.
For engineers reviewing the DMT12H090LFDF4-7 datasheet, DMT12H090LFDF4-7 pinout, DMT12H090LFDF4-7 application, or DMT12H090LFDF4-7 equivalent, this page delivers verified package mapping, thermal resistance (RθJA = 78°C/W on 1-inch² copper), UIS-rated ruggedness, and real-world switching parameters including Qg = 6nC and tF = 3.9ns - critical for high-frequency synchronous buck design and low-profile industrial power modules.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining fast switching via low gate charge (Qg = 6nC) and minimal Crss (3pF). Its 0.4mm profile and 2.0×2.0mm footprint support ultra-thin portable and automotive body-control applications where board height and thermal density are constrained.
The device features fully characterized avalanche capability (EAS = 0.79mJ, IAS = 2.3A), 100% production-tested UIS, and operates across –55°C to +150°C junction temperature range - enabling reliable use in unregulated input stages and hot-plug circuits without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 115V - supports 48V nominal bus systems with ≥2× voltage margin against transients |
| RDS(ON) | 90mΩ @ VGS = 10V - enables ≤0.3W conduction loss at 3.4A in compact DC-DC primary switches |
| Qg | 6nC - reduces gate drive power and allows use with low-current controllers (e.g., 100mA peak drivers) |
| tF | 3.9ns - minimizes switching overlap loss in >1MHz synchronous buck topologies |
| RθJA | 78°C/W (with 1-inch² copper) - permits 1.0W continuous dissipation at +70°C ambient without heatsink |
| EAS | 0.79mJ - sustains single-pulse inductive energy without failure in relay-driver or motor-gate applications |
| ID (max) | 3.4A @ TA = +25°C - defines maximum steady-state current in PCB-mounted low-voltage power rails |
Pinout & Package
Package: X2-DFN2020-6 (Type W), 2.0mm × 2.0mm × 0.4mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connected to PCB ground plane for thermal and EMI control |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <6nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Drain) | Power output (D) | High-voltage switching node; electrically isolated from thermal pad; routed with minimum loop area |
| Pin 4 (Source) | Source terminal (S) | Second source connection - paralleled internally with Pin 1 to reduce package inductance and improve current sharing |
| Pin 5 (Drain) | Power output (D) | Second drain connection - paralleled internally with Pin 3 to lower RDS(ON) and enhance pulsed current handling |
| Pin 6 (Thermal Pad) | Junction-to-PCB thermal path | Exposed copper pad under package; must be soldered to ≥1-inch² internal/external copper for RθJA = 78°C/W |
Key Features
| Feature | Design Value |
|---|---|
| 0.4mm profile | Enables integration into sub-1mm-thick consumer wearables and automotive sensor modules |
| 100% UIS tested | Guarantees robustness against inductive kickback in relay drivers and solenoid controls without derating |
| Green compound (94V-0) | Meets UL flammability and RoHS 3 (2015/863/EU) requirements for safety-critical end equipment |
| Low Crss (3pF) | Reduces Miller-induced shoot-through risk in half-bridge configurations operating above 500kHz |
| Body diode tRR = 83ns | Supports synchronous rectification in buck converters with minimal reverse recovery loss |
Applications
| DC-DC Primary Switch | Load Switch |
|---|---|
Use Scenario: High-efficiency 12V-to-3.3V synchronous buck converter in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side N-channel switch controlling power delivery to microcontroller subsystems with precise enable timing. Use Value: 90mΩ RDS(ON) limits conduction loss to 1.03W at 3.4A, while 6nC Qg enables clean 1MHz switching with minimal gate driver overhead. | Use Scenario: Hot-swap power rail for USB-C PD sink in portable medical monitors. IC Role / Device Role / Timing Role: Low-profile load switch enabling controlled inrush current and fault isolation during plug insertion. Use Value: 0.4mm height fits within 1.2mm board stackup; 100% UIS testing ensures survival of repeated 12V/2A hot-plug events. |
| Automotive Body Control | LED Driver Switch |
Use Scenario: Window lift motor driver in 12V automotive body control unit (BCU). IC Role / Device Role / Timing Role: Low-side switch driving brushed DC motor with PWM-controlled speed and direction reversal. Use Value: –55°C to +150°C operation accommodates engine bay mounting; EAS = 0.79mJ withstands motor back-EMF spikes up to 2.3A. | Use Scenario: Constant-current LED string switch in smart building occupancy sensors. IC Role / Device Role / Timing Role: PWM-controlled current-path switch enabling dimming and fault shutdown in 24V LED arrays. Use Value: 115V VDSS provides margin over 24V bus transients; 3.4A rating supports up to 12 high-brightness LEDs in series. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT12H090LSDQ-7 | Same die, SOT-23-6 package; RθJA = 141°C/W (no thermal pad); 3.4A derated to 2.1A at +70°C | Limited to lower-power, non-thermally constrained designs due to higher thermal resistance | Select when board space allows larger SOT-23-6 and thermal management is handled externally |
| DMTH10H090LPSQ-13 | 100V rating, 85mΩ @ 10V, PowerDI5060 package; RθJA = 50°C/W; 5.8A @ 25°C | Higher current capacity but larger 5.0×6.0mm footprint; suited for higher-power industrial SMPS | Select when >4A continuous current or lower thermal resistance is required, accepting larger PCB area |
Compared with DMT12H090LFDF4-7, DMT12H090LSDQ-7 trades thermal performance for legacy package compatibility, while DMTH10H090LPSQ-13 offers higher current and better cooling at the cost of footprint size - making the DMT12H090LFDF4-7 optimal for space- and height-constrained 3–4A DC-DC and load-switch roles.
Availability
DMT12H090LFDF4-7 is available at Aetrix Electronics and suitable for DC-DC primary switching, load switching, automotive body control, and LED driver applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for DMT12H090LFDF4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for high-density power management in portable, automotive, and industrial systems where low profile, low RDS(ON), and robust UIS performance are mandatory.
FAQ
What is the maximum gate-source voltage rating for DMT12H090LFDF4-7?
The absolute maximum gate-source voltage (VGSS) is ±12V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10V for full enhancement and 0V to –5V for turn-off, with transient overshoot clamped by external Zener protection if used in noisy environments.
Does DMT12H090LFDF4-7 require a gate resistor for stability?
Yes - a 3Ω to 10Ω gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 3pF) and PCB trace inductance. Without it, fast edges may induce oscillation during turn-on/turn-off, increasing switching loss and EMI. The resistor value balances rise/fall time control against gate driver loading.
Can DMT12H090LFDF4-7 be used in linear (analog) regulation mode?
No - it is not characterized or guaranteed for linear operation. Its Safe Operating Area (SOA) curve shows only single-pulse capability up to 10ms at 3.4A/115V; sustained linear bias would exceed thermal limits due to lack of SOA derating data and uncontrolled thermal runaway risk in the 0.4mm thin package.
Is the thermal pad electrically isolated in DMT12H090LFDF4-7?
No - the exposed thermal pad is internally connected to the source (S) terminals (Pins 1 and 4). It must be soldered to a PCB copper pour tied to the source net to ensure both thermal performance and electrical integrity. Floating or grounded-to-chassis connection will cause malfunction or failure.
DMT12H090LFDF4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerXDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 115 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3V, 10V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 251 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN2020-6
DMT12H090LFDF4-7 FAQ
1.How can I place an order for DMT12H090LFDF4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT12H090LFDF4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT12H090LFDF4-7 reliable?
The price and inventory of DMT12H090LFDF4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT12H090LFDF4-7 is usually 5 days.
3.What payment methods are accepted for DMT12H090LFDF4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT12H090LFDF4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT12H090LFDF4-7?
DMT12H090LFDF4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT12H090LFDF4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT12H090LFDF4-7?
For technical support, including DMT12H090LFDF4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT12H090LFDF4-7 requirements.
6.How does Aetrix verify that DMT12H090LFDF4-7 is sourced from the original manufacturer or authorized distributors?
All DMT12H090LFDF4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT12H090LFDF4-7 meets industry standards.
7.What is the process for return or replacement of DMT12H090LFDF4-7?
All DMT12H090LFDF4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT12H090LFDF4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT12H090LFDF4-7 part is unused and in its original packaging.
Return procedure for DMT12H090LFDF4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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