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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT15H017LPSW-13

Name: DMT15H017LPSW-13
Brand: Diodes Incorporated
SKU: DMT15H017LPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT15H017LPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMT15H017LPSW-13.pdf

Description:: MOSFET BVDSS: 101V~250V POWERDI5

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Product details

Overview

DMT15H017LPSW-13 from Diodes Incorporated is a 150V N-channel enhancement-mode power MOSFET in PowerDI5060-8 (SWP) package, delivering 17.5 mΩ R_DS(ON) at V_GS = 10 V and 58 A continuous drain current at T_C = +25°C. It serves as a high-efficiency load switch or synchronous rectifier in notebook battery management systems.

For engineers reviewing the DMT15H017LPSW-13 datasheet, DMT15H017LPSW-13 pinout, DMT15H017LPSW-13 application, or DMT15H017LPSW-13 equivalent, this device is selected for low conduction loss, fast switching (t_F = 17.7 ns), thermally robust operation (R_θJC = 1.4°C/W), and thin-profile integration (<1.1 mm height).

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining controlled gate charge (Q_g = 50 nC) and minimized reverse transfer capacitance (C_rss = 6.7 pF). Its 100% UIS-tested ruggedness supports reliable operation under inductive switching stress.

The PowerDI5060-8 package features an exposed drain pad for direct thermal coupling to PCB copper, enabling high-power dissipation (P_D = 89 W at T_C = +25°C) without external heatsinks in compact portable designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands up to 150 V drain-source voltage, suitable for 12–48 V system rails with margin.
R_DS(ON)	17.5 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 20 A, critical for battery runtime extension.
I_D (continuous)	58 A @ T_C = +25°C - Supports high-current load switching in notebook DC/DC output stages.
Q_g	50 nC - Low gate drive energy reduces driver IC loading and enables efficient PWM control at >500 kHz.
t_F	17.7 ns - Fast fall time minimizes switching transition losses in synchronous rectification.
R_θJC	1.4°C/W - Enables direct thermal path from junction to PCB, supporting high ambient temperature operation.
E_AS	315.4 mJ - Confirmed avalanche energy rating ensures robustness during transient overcurrent events.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 × 1.00 mm (L × W × H), profile <1.1 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; threshold range 1.3–2.6 V.
Pins 2–5, 7–8 (D)	Drain	High-side switching node; electrically and thermally connected to exposed copper pad on bottom.
Pin 6 (S)	Source	Power return path; referenced to gate drive ground; hosts body diode cathode.

Key Features

Feature	Design Value
100% UIS tested	Guarantees minimum 14.5 A avalanche current and 315.4 mJ energy handling without failure.
Thermally efficient package	Exposed drain pad and low R_θJC (1.4°C/W) allow >85 W power dissipation with minimal board area.
Low R_DS(ON) at 4.5 V	25.5 mΩ at V_GS = 4.5 V enables logic-level drive compatibility in 5 V control domains.
Fast switching speed	Combined t_D(OFF) + t_F = 62.3 ns reduces switching loss in high-frequency DC/DC converters.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IEC 61249-2-21.

Applications

Notebook Battery Protection Circuit

USB-C PD Load Switch

Use Scenario: Isolates main battery from system bus during fault conditions or deep sleep mode.

IC Role / Device Role / Timing Role: High-side load switch controlling 12–20 V battery rail with fast turn-off response.

Use Value: 17.5 mΩ R_DS(ON) limits voltage drop to <350 mV at 20 A, preserving battery capacity and runtime.

Use Scenario: Enables/disables 20 V/5 A USB-C Power Delivery output path in portable docking stations.

IC Role / Device Role / Timing Role: Bidirectional load switch managing power flow between source and sink ports.

Use Value: 25.5 mΩ R_DS(ON) at 4.5 V gate drive allows direct MCU GPIO control without level-shifting.

Class D Audio Amplifier Output Stage

Synchronous Rectifier in DC/DC Converter

Use Scenario: Drives speaker loads in high-efficiency portable audio amplifiers operating up to 150 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology with fast edge control.

Use Value: 17.7 ns fall time and 6.7 pF C_rss minimize shoot-through risk and EMI generation.

Use Scenario: Replaces Schottky diode in secondary-side synchronous rectification of 12 V output buck converter.

IC Role / Device Role / Timing Role: Active rectifier conducting during low-side MOSFET on-time in flyback or LLC topologies.

Use Value: 0.8–1.2 V V_SD forward drop at 20 A cuts conduction loss by >60% vs. 0.45 V Schottky diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH15H017LPSW-13	Same die, identical R_DS(ON), Q_g, and SOA; differs only in tape-and-reel packaging (1,000 pcs vs. 2,500 pcs).	No functional difference; used interchangeably where volume or reel size constraints apply.	Select when smaller reels align with SMT line changeover frequency or inventory turnover targets.
DMT15H017LPS-13	Omits "W" suffix; uses standard PowerDI5060-8 (non-SWP) variant with higher R_θJA (53°C/W vs. 99°C/W) and no exposed drain pad.	Limited to lower-power applications (<15 W) due to reduced thermal performance and no PCB thermal coupling.	Choose only if thermal budget permits higher junction temperature rise and cost sensitivity outweighs efficiency gain.

Compared with DMT15H017LPSW-13, DMTH15H017LPSW-13 offers identical electrical and thermal behavior but different packaging logistics, while DMT15H017LPS-13 sacrifices thermal capability for lower cost-making the "W" variant essential for high-current, thermally constrained designs.

Availability

DMT15H017LPSW-13 is available at Aetrix Electronics and suitable for notebook battery management, USB-C PD load switching, and Class D audio amplifier output stages requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DMT15H017LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for consumer, computing, and industrial markets.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for space-constrained, high-efficiency power switching in portable electronics where thermal density and low R_DS(ON) are primary design drivers.

FAQ

What is the maximum safe operating junction temperature for DMT15H017LPSW-13?

The absolute maximum junction temperature is +150°C per the datasheet. Operation above +125°C significantly increases R_DS(ON) (up to 2.4× nominal at +150°C), so thermal design must ensure T_J remains ≤+125°C under worst-case load and ambient conditions.

Can DMT15H017LPSW-13 be driven directly by a 3.3 V microcontroller GPIO?

No-its V_GS(TH) range is 1.3–2.6 V, but R_DS(ON) rises sharply below 4.5 V (25.5 mΩ) and exceeds 40 mΩ at 3.3 V. Reliable enhancement requires ≥4.5 V gate drive; a level-shifter or dedicated gate driver is necessary for 3.3 V logic control.

Does DMT15H017LPSW-13 include integrated ESD protection on the gate?

Yes-the gate oxide is rated for ±20 V V_GSS, and the device passes human-body-model (HBM) ESD testing per JESD22-A114 (≥2 kV). However, external gate resistors (10–100 Ω) and TVS clamping are still recommended in noisy environments to prevent latch-up or oxide damage.

Is the PowerDI5060-8 (SWP) package compatible with standard reflow profiles for lead-free soldering?

Yes-it is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C. The matte tin annealed finish ensures reliable wetting, and the 0.097 g mass enables uniform heating across all eight terminals during standard Pb-free ramp-soak-reflow cycles.

DMT15H017LPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3369 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta), 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMT15H017LPSW-13 FAQ

1.How can I place an order for DMT15H017LPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT15H017LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT15H017LPSW-13 reliable?

The price and inventory of DMT15H017LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H017LPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT15H017LPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H017LPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT15H017LPSW-13?

DMT15H017LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT15H017LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT15H017LPSW-13?

For technical support, including DMT15H017LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H017LPSW-13 requirements.

6.How does Aetrix verify that DMT15H017LPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT15H017LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H017LPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT15H017LPSW-13?

All DMT15H017LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H017LPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT15H017LPSW-13 part is unused and in its original packaging.

Return procedure for DMT15H017LPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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