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Diodes Incorporated DMT15H017SK3-13
- Part No.:
- DMT15H017SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT15H017SK3-13.pdf
- Description:
- MOSFET BVDSS: 101V~250V TO252 T&
- Quantity:
- Payment:
- Shipping:
Inventory:7,783
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Product details
Overview
DMT15H017SK3-13 from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 68A continuous drain current at TC = +25°C, with RDS(ON) of 18.5mΩ @ VGS = 10V and 22mΩ @ VGS = 8V. It delivers low switching losses via Qg = 34nC and supports robust power conversion in DC-DC converters and LED backlighting.
For engineers reviewing the DMT15H017SK3-13 datasheet, DMT15H017SK3-13 pinout, DMT15H017SK3-13 application, or DMT15H017SK3-13 equivalent, key selection criteria include its 100% production-tested UIS capability, junction-to-case thermal resistance of 1.0°C/W, and AEC-Q101 readiness for automotive-grade reliability validation.
Technical Context
This MOSFET employs planar trench-gate technology optimized for high-voltage switching efficiency. Its gate threshold voltage (2–4V) enables compatibility with standard 3.3V/5V logic-level drivers, while low Crss (6.9pF) and fast turn-off delay (26.3ns) support high-frequency operation up to 500kHz in synchronous buck topologies.
The device integrates a co-packaged body diode with VSD = 0.8–1.2V @ IS = 20A and tRR = 69ns, enabling efficient freewheeling in hard-switched converters. Thermal design is anchored by RθJC = 1.0°C/W and an exposed drain pad for direct heatsinking-critical for maintaining TJ ≤ 150°C under 61A continuous load at TC = +70°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150V - Withstands DC bus voltages up to 120V with 25% margin for transient spikes in industrial DC-DC designs. |
| RDS(ON) | 18.5mΩ @ VGS = 10V - Enables <1.2W conduction loss at 20A, reducing heatsink requirements in compact 48V input converters. |
| ID (continuous) | 68A @ TC = +25°C - Supports high-current output stages without paralleling, simplifying PCB layout in server VRMs. |
| Qg | 34nC - Reduces gate drive power demand and allows use of lower-cost 1A peak gate drivers in 300kHz+ switching applications. |
| EAS | 311mJ - Sustains single-pulse inductive energy without failure, eliminating need for external snubbers in motor gate-drive circuits. |
| RθJC | 1.0°C/W - Permits direct thermal coupling to copper planes or heatsinks, enabling >75W dissipation with <75°C temperature rise above case. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad on bottom for thermal conduction. Dimensions per Diodes Inc. outline: D = 6.10mm, E = 6.58mm, L = 1.59mm, b3 = 5.33mm (drain tab width).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side return path; connects to ground plane or low-side shunt resistor for current sensing. |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate requiring <100nA leakage; routed away from noisy power traces to prevent false turn-on. |
| Pin 3 (Drain) | Power output | Exposed metal pad (Pin 3) - must be soldered to large copper area for thermal management and current conduction. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness across full production lot-no derating needed for inductive load transients in automotive body control modules. |
| Low Qg/Qgd ratio | Qgd = 9nC / Qg = 34nC → 26% - minimizes Miller effect, improving noise immunity and enabling stable operation with minimal gate resistance. |
| Halogen- and antimony-free "Green" compound | Br+Cl <1500ppm, Sb <1000ppm - meets IPC-1752A Class 3 reporting requirements for automotive Tier 1 BOM compliance. |
| Moisture sensitivity Level 1 | No bake required before reflow - compatible with standard J-STD-020-compliant assembly lines without process modification. |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
Use Scenario: 48V-to-12V step-down converter powering industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300kHz with 50% duty cycle. Use Value: 18.5mΩ RDS(ON) limits conduction loss to 0.74W at 20A, enabling >95% efficiency without forced air cooling. | Use Scenario: Constant-current driver for 120W LCD TV edge-lit LED strings. IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating 3A LED current at 1kHz. Use Value: Low Qg (34nC) ensures clean 10ns rise/fall edges, eliminating visible PWM flicker and EMI peaks above 30MHz. |
| Automotive Body Control Unit | Industrial Motor Gate Driver |
Use Scenario: Load switch for 12V HVAC blower motor in AEC-Q100-compliant BCM. IC Role / Device Role / Timing Role: Protected high-side power switch with integrated overcurrent and thermal shutdown coordination. Use Value: 311mJ EAS withstands 10ms stall currents up to 60A, eliminating need for external TVS clamping in ISO 7637-2 pulse 5a testing. | Use Scenario: Half-bridge high-side switch in 24V brushless DC motor controller for factory automation. IC Role / Device Role / Timing Role: Fast-switching N-channel driver paired with bootstrap gate driver IC (e.g., DIODES AP2112). Use Value: 26.3ns tD(OFF) and 16.1ns tF minimize dead-time losses, increasing torque density by 4.2% at 20krpm. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | RDS(ON) = 9.5mΩ @ 10V but VDSS = 100V only; higher Qg = 52nC | Not suitable for 150V bus designs; requires redesign of snubber and input capacitor rating | Select only if system voltage is capped at 80V and lower conduction loss justifies added gate drive complexity. |
| IXTP150N15T | VDSS = 150V, RDS(ON) = 15mΩ @ 10V, but TO-220 package increases RθJA to 62°C/W vs. 39°C/W for DMT15H017SK3-13 | Larger footprint and inferior thermal performance limit usable current to 45A in same PCB area | Prefer for prototyping with through-hole assembly; avoid in space-constrained or thermally dense layouts. |
Compared with STP150N10F7 and IXTP150N15T, DMT15H017SK3-13 uniquely balances 150V rating, 18.5mΩ on-resistance, and TO252 thermal efficiency-making it optimal for production-grade 48–120V DC-DC and motor-control designs where board area and thermal headroom are constrained.
Availability
DMT15H017SK3-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and automotive body control units requiring stable component supply and long-term manufacturing continuity.
Supply support for DMT15H017SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.
This MOSFET belongs to Diodes' "PowerMOS™" product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where ruggedness and thermal performance are critical.
FAQ
Is DMT15H017SK3-13 qualified to AEC-Q101?
Yes-Diodes Incorporated lists DMT15H017SK3-13 as AEC-Q101 qualified per their official product definitions page. The device is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request for automotive customers.
What is the maximum safe operating temperature for continuous 61A drain current?
At TC = +70°C, the device supports 61A continuous ID. To sustain this, the case temperature must be held at or below +70°C via thermal design-achievable with ≥2500mm² 2oz copper pad and minimal thermal interface resistance to ambient or heatsink.
Can DMT15H017SK3-13 be driven directly by a 3.3V microcontroller GPIO?
No-its VGS(TH) range is 2–4V, but RDS(ON) rises sharply below VGS = 8V (22mΩ) and exceeds 40mΩ at VGS = 4.5V. A dedicated gate driver (e.g., DIODES AP2112) or level-shifter is required for reliable 68A switching.
Does the TO252 package require special PCB layout considerations?
Yes-the exposed drain pad (Pin 3) must be connected to a minimum 25mm² copper area with ≥4 thermal vias (0.3mm diameter) to an internal ground plane. Insufficient copper reduces RθJC effectiveness and risks thermal runaway above 30A continuous load.
DMT15H017SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 8V, 10V
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2344 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMT15H017SK3-13 FAQ
1.How can I place an order for DMT15H017SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT15H017SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT15H017SK3-13 reliable?
The price and inventory of DMT15H017SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H017SK3-13 is usually 5 days.
3.What payment methods are accepted for DMT15H017SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H017SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT15H017SK3-13?
DMT15H017SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT15H017SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT15H017SK3-13?
For technical support, including DMT15H017SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H017SK3-13 requirements.
6.How does Aetrix verify that DMT15H017SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT15H017SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H017SK3-13 meets industry standards.
7.What is the process for return or replacement of DMT15H017SK3-13?
All DMT15H017SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H017SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT15H017SK3-13 part is unused and in its original packaging.
Return procedure for DMT15H017SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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