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Diodes Incorporated DMT15H035SCT

Part No.:
DMT15H035SCT
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixDMT15H035SCT.pdf
Description:
MOSFET BVDSS: 101V~250V TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,232

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Product details

Overview

DMT15H035SCT from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in TO220AB package, rated for 46A continuous drain current at TC = +25°C, with RDS(ON) = 35 mΩ @ VGS = 10V and low gate charge (Qg = 25 nC). It delivers robust unclamped inductive switching (IAS = 17 A, EAS = 144.5 mJ) and supports high-efficiency DC-DC converters and LED backlighting systems.

For engineers reviewing the DMT15H035SCT datasheet, DMT15H035SCT pinout, DMT15H035SCT application, or DMT15H035SCT equivalent, key selection criteria include its 150V BVDSS rating, 35 mΩ on-resistance at 10V drive, thermal resistance RθJC = 0.75 °C/W, avalanche capability, and TO220AB mechanical compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage power switching, featuring a fully rated 150V drain-source breakdown voltage and gate threshold voltage (VGS(TH)) of 2–4 V. Its low output capacitance (Coss = 160 pF) and reverse transfer capacitance (Crss = 4.2 pF) support fast turn-off and reduced Miller effect in hard-switched topologies.

The device integrates an intrinsic body diode with VSD = 0.9–1.0 V @ IS = 20A and tRR = 53 ns, enabling synchronous rectification and freewheeling in buck and flyback converters. Thermal design is anchored to RθJC = 0.75 °C/W, allowing 166 W power dissipation with proper case heatsinking.

Key Specifications

ParameterValue and Actual Design Meaning
BVDSS150 V - Withstands up to 150 V drain-source blocking voltage before avalanche conduction.
RDS(ON) Max35 mΩ @ VGS = 10V - Enables <1.6 W conduction loss at 46 A, critical for high-current power stages.
ID Max (TC = 25°C)46 A - Supports high-output DC-DC stages without parallel devices in thermally managed designs.
Qg25 nC - Reduces gate driver power demand and switching transition time in 100–500 kHz applications.
EAS144.5 mJ - Guarantees reliable operation under inductive load switching without external snubbers.
RθJC0.75 °C/W - Allows direct thermal path to heatsink; enables >100 W continuous operation with modest heatsink.
VGS(TH)2–4 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

Package: TO220AB - Through-hole, single-ended, insulated tab, with exposed drain pad for thermal and electrical connection to heatsink. Molded green plastic housing (UL 94V-0), matte tin annealed terminals solderable per MIL-STD-202.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output / heatsink interfaceElectrically and thermally connected to metal tab; must be isolated from chassis unless referenced to system ground.
SourceReference node for gate control and current returnLow-inductance connection point for sense resistor placement and gate driver reference return path.
GateControl input for channel modulationHigh-impedance terminal requiring low-impedance gate driver and local decoupling to suppress ringing.

Key Features

FeatureDesign Value
100% Unclamped Inductive Switching (UIS)Validated to 144.5 mJ energy - eliminates need for external clamping circuits in motor drives and solenoid controls.
Low Qg (25 nC)Reduces gate driver losses and enables efficient operation at 300–500 kHz in compact SMPS designs.
RoHS 3 & Halogen-FreeComplies with EU Directive 2015/863/EU and Diodes' "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb).
Thermal RθJC = 0.75 °C/WSupports high-power density layouts where PCB copper area is limited and heatsink attachment is primary cooling path.
Body Diode tRR = 53 nsEnables use in synchronous rectification and bidirectional power flow without external Schottky replacement.

Applications

DC-DC Buck ConverterLED Backlight Driver

Use Scenario: High-efficiency 12–48 V input to 5–24 V output step-down converter for industrial HMIs and telecom power modules.

IC Role / Device Role / Timing Role: Primary high-side switching element operating at 250–400 kHz with synchronous rectification.

Use Value: 35 mΩ RDS(ON) minimizes conduction loss at 30–45 A load; low Qg reduces gate drive overhead and improves light-load efficiency.

Use Scenario: Constant-current LED string driver for automotive center console and infotainment displays.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating current through 4–8 series-connected LEDs.

Use Value: 150 V BVDSS accommodates transient surges in vehicle battery systems; UIS rating ensures reliability during LED open-circuit fault events.

Industrial Motor ControlAC-DC PFC Stage

Use Scenario: Half-bridge leg in 100–500 W brushless DC motor controllers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling commutation current with fast body diode recovery.

Use Value: 53 ns tRR and low Crss reduce shoot-through risk and EMI during dead-time transitions.

Use Scenario: Boost switch in active front-end PFC circuits for server PSUs and medical AC adapters.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost topology.

Use Value: 166 W PD rating and 0.75 °C/W RθJC allow stable operation at full load without derating in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP150N10F7100V BVDSS, 3.2 mΩ RDS(ON), TO220FP package (isolated tab)Limited to ≤100 V systems; lower RDS(ON) but higher voltage stress margin requiredSelect when lower conduction loss dominates and system voltage stays ≤80 V.
IXTP150N10T100V BVDSS, 4.2 mΩ RDS(ON), TO220 package, no UIS rating specifiedNot validated for unclamped inductive loads; requires external protection in motor/solenoid appsPrefer only in non-inductive, well-clamped switching environments with tight RDS(ON) requirements.

Compared with STP150N10F7 and IXTP150N10T, DMT15H035SCT uniquely combines 150 V rating, 35 mΩ on-resistance, and guaranteed UIS performance-making it the only choice for 120–150 V bus applications demanding ruggedness without added protection circuitry.

Availability

DMT15H035SCT is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and industrial motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from certified manufacturing facilities.

Supply support for DMT15H035SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

DMT15H035SCT belongs to Diodes' high-voltage PowerMOS™ portfolio, engineered specifically for rugged, high-efficiency switching in 100–200 V power conversion applications where avalanche capability and thermal robustness are mandatory.

FAQ

What is the maximum safe operating junction temperature for DMT15H035SCT?

The absolute maximum junction temperature is +150°C, and the device is characterized across –55°C to +150°C. Derating begins above +125°C ambient in typical TO220AB mounting configurations; thermal design must ensure TJ remains ≤150°C under worst-case power dissipation and ambient conditions.

Does DMT15H035SCT support logic-level gate drive?

No-it requires ≥4.5 V VGS for full enhancement, with VGS(TH) ranging from 2.0–4.0 V. At 5 V drive, RDS(ON) rises significantly versus 10 V; optimal performance demands 10 V gate drive with ±20 V rating compliance.

Can DMT15H035SCT replace older TO220 MOSFETs like IRF640 in existing designs?

Yes, with verification: DMT15H035SCT matches IRF640's pinout and package but offers superior specs-150 V vs. 200 V BVDSS (lower), yet 35 mΩ vs. 180 mΩ RDS(ON), plus 100% UIS validation. Layout changes may be needed for thermal management due to higher current density.

Is DMT15H035SCT qualified for automotive applications?

Not by default-the datasheet states automotive qualification (AEC-Q101) requires specific change control and PPAP capability. Standard DMT15H035SCT is industrial-grade; automotive-grade variants must be requested separately through Diodes' automotive sales channel.

DMT15H035SCT Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
2.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

DMT15H035SCT FAQ

1.How can I place an order for DMT15H035SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT15H035SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT15H035SCT reliable?

The price and inventory of DMT15H035SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H035SCT is usually 5 days.

3.What payment methods are accepted for DMT15H035SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H035SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT15H035SCT?

DMT15H035SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT15H035SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT15H035SCT?

For technical support, including DMT15H035SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H035SCT requirements.

6.How does Aetrix verify that DMT15H035SCT is sourced from the original manufacturer or authorized distributors?

All DMT15H035SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H035SCT meets industry standards.

7.What is the process for return or replacement of DMT15H035SCT?

All DMT15H035SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H035SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT15H035SCT part is unused and in its original packaging.

Return procedure for DMT15H035SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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