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Diodes Incorporated DMT15H053SK3-13
- Part No.:
- DMT15H053SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT15H053SK3-13.pdf
- Description:
- MOSFET BVDSS: 101V~250V TO252 T&
- Quantity:
- Payment:
- Shipping:
Inventory:2,258
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Product details
Overview
DMT15H053SK3 from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 21A continuous drain current at TC = +25°C, with RDS(ON) of 43–60 mΩ at VGS = 10V and low total gate charge (Qg = 11.5 nC). It delivers robust unclamped inductive switching capability (IAS = 11.7 A, EAS = 68.4 mJ) and is optimized for high-efficiency DC-DC converters and LED backlighting power stages.
For engineers reviewing the DMT15H053SK3 datasheet, DMT15H053SK3 pinout, DMT15H053SK3 application, or DMT15H053SK3 equivalent, key selection criteria include its 150V BVDSS rating, thermally efficient RθJC = 2.1°C/W, 100% UIS ruggedness, and suitability for synchronous rectification and mid-power switching in industrial and display power supplies.
Technical Context
This MOSFET employs planar silicon process technology to achieve stable threshold voltage (VGS(TH) = 2–4 V) and low on-resistance across temperature (RDS(ON) variation <2.4× from –55°C to +150°C). Its low Crss (3.7 pF) and fast switching times (tD(ON) = 8.5 ns, tF = 6.2 ns) support high-frequency operation up to 500 kHz in hard-switched topologies.
The device integrates a low-VF body diode (VSD = 0.9–1.0 V at IS = 20 A) with controlled reverse recovery (tRR = 47 ns, QRR = 87 nC), enabling reliable freewheeling in buck and flyback converters without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 150 V - Withstands 150V drain-source blocking voltage, suitable for 48V input systems with 2× transient margin. |
| RDS(ON) Max | 60 mΩ @ VGS = 10V - Ensures ≤2.4 W conduction loss at 20A, enabling compact thermal design on FR-4 PCBs. |
| ID Continuous | 21 A @ TC = +25°C - Supports high-current power stages without forced air cooling when mounted on ≥1-inch² copper pad. |
| Qg Total | 11.5 nC - Reduces gate drive power and enables use with low-power controllers (e.g., PWM ICs with ≤20 mA peak drive). |
| EAS | 68.4 mJ - Guarantees survivability under worst-case inductive turn-off events (L = 1 mH), eliminating need for snubbers in many designs. |
| RθJC | 2.1 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad, supporting >40W pulsed dissipation in short-duration loads. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound (UL 94V-0), matte tin–annealed terminals, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10V logic-level signal to fully enhance channel; threshold range 2–4 V allows compatibility with 3.3V/5V microcontrollers via gate driver. |
| 2 (Drain) | High-side switch node | Connected to exposed copper pad; serves as primary heat path and high-voltage power terminal-must be routed with clearance ≥1.5 mm for 150V working voltage. |
| 3 (Source) | Power return / reference | Provides low-impedance return path for load current; ties to ground plane or low-side switch source; critical for minimizing common-source inductance in high-dI/dt operation. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Rated for 11.7A avalanche current and 68.4mJ energy-enables robust operation in non-clamped inductive loads without external protection. |
| Low Qg and Crss | Qg = 11.5 nC and Crss = 3.7 pF reduce Miller-induced shoot-through risk and enable clean turn-on/turn-off in synchronous rectifiers. |
| Thermally Optimized DPAK | RθJC = 2.1°C/W and exposed drain pad allow >60W pulsed power handling-supports high-duty-cycle operation in space-constrained PCB layouts. |
| Green, RoHS-Compliant Construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); matte tin finish ensures solderability per MIL-STD-202 Method 208. |
Applications
| LED Backlight Power Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Driving CCFL or high-brightness LED strings in medical displays and factory HMIs requiring 150V bus operation. IC Role / Device Role / Timing Role: High-side switch in boost or SEPIC topology, operating at 100–300 kHz with 21A peak inductor current. Use Value: Low RDS(ON) minimizes thermal rise in sealed enclosures; UIS rating eliminates need for overvoltage clamping during LED open-circuit faults. |
Use Scenario: Primary-side switch in 48V-to-12V isolated DC-DC modules for PLC I/O and sensor power rails. IC Role / Device Role / Timing Role: Main switching element in active-clamp forward or half-bridge configuration, handling 15A continuous output with <1% duty cycle variation. Use Value: Fast tF = 6.2 ns and low Qgd = 2.8 nC suppress cross-conduction losses; RθJC = 2.1°C/W enables derating-free operation at 70°C ambient. |
| Automotive Body Control Module | Server PSU OR-ing FET |
|
Use Scenario: Load switching for 12V/24V auxiliary circuits (e.g., HVAC actuators, lighting relays) in AEC-Q101–qualified BCU designs. IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU GPIO, cycling at <10 Hz with 15A resistive load. Use Value: VGS(TH) = 2–4 V ensures reliable turn-on with 3.3V logic; 100% UIS prevents latch-up during battery disconnect transients. |
Use Scenario: OR-ing FET in redundant 12V server power distribution units where hot-swap and fault isolation are required. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss pass element in ideal diode controller circuit, conducting 20A continuously. Use Value: RDS(ON) = 43 mΩ (typ.) yields <17 mV forward drop at 20A-reducing conduction loss by 65% vs. Schottky diode alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT15H053LK3-13 | Same die, but in TO263 (D2PAK) package; RθJC = 1.7°C/W, PD = 90W (TC = +25°C) | Better thermal performance for >30A continuous designs; requires larger PCB footprint and higher assembly cost | Select when board-level thermal resistance exceeds 3.5°C/W and junction temperature must stay <125°C at full load. |
| IPB180N15N3GATMA1 | 150V TrenchFET, RDS(ON) = 4.8 mΩ @ VGS = 10V, Qg = 43 nC, TO263 package | Lower RDS(ON) but 3.7× higher Qg; suited for low-frequency, high-current applications where switching loss is secondary | Prefer for <100 kHz operation with >35A average current; avoid in high-frequency DC-DC where gate drive loss dominates. |
Compared with DMT15H053SK3, DMT15H053LK3-13 offers superior thermal headroom at the cost of board area, while IPB180N15N3GATMA1 trades switching efficiency for conduction efficiency-making the DMT15H053SK3 optimal for space-constrained, medium-power, high-frequency applications.
Availability
DMT15H053SK3 is available at Aetrix Electronics and suitable for LED backlight drivers, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for DMT15H053SK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMT15H053SK3 belongs to Diodes' high-voltage power MOSFET product line, engineered for efficiency-critical switching applications where ruggedness, thermal performance, and lead-free compliance are mandatory.
FAQ
What is the maximum safe operating junction temperature for DMT15H053SK3?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across –55°C to +150°C. Derating begins at TJ > 125°C per the SOA curve (Figure 12), where pulse width and duty cycle must be limited to maintain RθJC thermal integrity and avoid permanent parametric shift.
Can DMT15H053SK3 be used as a synchronous rectifier in a 150kHz flyback converter?
Yes-its low Qg (11.5 nC), fast tF (6.2 ns), and low Crss (3.7 pF) minimize switching losses and gate drive requirements. The body diode's tRR = 47 ns and QRR = 87 nC are compatible with typical 150kHz flyback timing, provided the controller supports adaptive dead-time control to prevent shoot-through.
Does DMT15H053SK3 meet AEC-Q101 qualification?
No-the datasheet explicitly states that AEC-Q101 qualification requires special change control, PPAP capability, and IATF 16949 manufacturing; standard DMT15H053SK3 is not AEC-Q101 qualified. For automotive use, engineers must contact Diodes directly to request the qualified variant (e.g., part number suffix -Q1).
What PCB layout practices maximize thermal performance for DMT15H053SK3?
Maximize copper area under the exposed drain pad (≥1 inch² recommended), use ≥2 oz copper, connect to internal ground/power planes via ≥6 thermal vias (0.3 mm diameter, spaced ≤1 mm apart), and avoid silkscreen or solder mask over the pad. Per Note 7 in the datasheet, this achieves RθJA = 45°C/W and supports 2.8 W continuous dissipation.
DMT15H053SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 814 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMT15H053SK3-13 FAQ
1.How can I place an order for DMT15H053SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT15H053SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT15H053SK3-13 reliable?
The price and inventory of DMT15H053SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H053SK3-13 is usually 5 days.
3.What payment methods are accepted for DMT15H053SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H053SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT15H053SK3-13?
DMT15H053SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT15H053SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT15H053SK3-13?
For technical support, including DMT15H053SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H053SK3-13 requirements.
6.How does Aetrix verify that DMT15H053SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT15H053SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H053SK3-13 meets industry standards.
7.What is the process for return or replacement of DMT15H053SK3-13?
All DMT15H053SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H053SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT15H053SK3-13 part is unused and in its original packaging.
Return procedure for DMT15H053SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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