Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMT15H053SPSW-13

Part No.:
DMT15H053SPSW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMT15H053SPSW-13.pdf
Description:
MOSFET BVDSS: 101V~250V POWERDI5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,073

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMT15H053SPSW from Diodes Incorporated is a 150V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 24A continuous drain current at TC = +25°C, with RDS(ON) = 46 mΩ (typ) / 66 mΩ (max) at VGS = 10V and Qg = 11.5 nC - optimized for high-efficiency DC-DC converters and backlight power stages.

For engineers reviewing the DMT15H053SPSW datasheet, DMT15H053SPSW pinout, DMT15H053SPSW application, or DMT15H053SPSW equivalent, key selection criteria include its 1.4 °C/W RθJC, 100% production-tested UIS capability, <1.1 mm profile, and AEC-Q–qualified thermal robustness for automotive-adjacent industrial power designs.

Technical Context

This MOSFET employs planar trench-gate silicon technology to achieve low conduction loss while maintaining fast switching dynamics: Ciss = 814 pF, Coss = 84 pF, and Crss = 3.7 pF at VDS = 75V enable efficient hard-switching operation in synchronous buck topologies.

Its gate threshold voltage VGS(TH) = 2–4 V (min/typ/max) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, and the integrated body diode exhibits VSD = 0.9 V (typ) at IS = 20A, supporting bidirectional current handling in flyback and half-bridge configurations.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V input bus systems with margin.
RDS(ON) 46 mΩ (typ) @ VGS = 10 V - Delivers ≤1.1 W conduction loss at 20 A, enabling compact thermal design.
ID (continuous) 24 A @ TC = +25°C - Supports high-current power stages without external heatsinking under controlled case temperature.
Qg 11.5 nC - Enables low drive power and fast switching transitions, reducing total switching loss in 300–1000 kHz converters.
RθJC 1.4 °C/W - Allows direct thermal coupling to PCB copper or heatsink, critical for sustained high-power operation.
EAS 68.4 mJ - Confirmed avalanche energy rating supports unclamped inductive switching in motor drives and solenoid controls.
VGS(TH) 2–4 V - Compatible with standard microcontroller GPIOs and dedicated gate drivers without level-shifting.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), thermally enhanced surface-mount package with exposed drain pad for low RθJC; dimensions: 5.15 × 6.40 × 1.00 mm (L × W × H), <1.1 mm profile.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain) Power Drain (parallel-connected) All eight pins labeled "D" are internally bonded to the drain terminal and serve as primary current-carrying and thermal conduction paths to the exposed pad.
Pin 9 (Source) Source Terminal Single-source connection point for return path; used for current sensing and gate driver reference in high-side configurations.
Pin 10 (Gate) Control Gate Low-impedance control input requiring <11.5 nC charge for full enhancement; layout must minimize inductance to suppress ringing.

Key Features

Feature Design Value
100% UIS tested in production Guarantees minimum 11.7 A avalanche current and 68.4 mJ single-pulse energy handling without failure - eliminates need for external snubbers in inductive load switching.
Thermally efficient PowerDI5060-8 1.4 °C/W junction-to-case resistance enables >90 W power dissipation at TC = +25°C - reduces reliance on external heatsinks in space-constrained modules.
Low Qg / low Ciss 11.5 nC total gate charge and 814 pF input capacitance allow clean 10 ns-scale switching edges with minimal driver stress at 500 kHz.
Automotive-qualified variant available DMT15H053SPSWQ meets AEC-Q200 requirements - same die and package, qualified for extended temperature and reliability testing in automotive subsystems.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm), matte tin annealed terminals - compliant with EU RoHS 3 and JEDEC J-STD-020 Level 1 moisture sensitivity.

Applications

DC-DC Buck Converter LED Backlight Driver

Use Scenario: Primary switch in 12–48 V input, 3–24 V output synchronous buck converter powering FPGA core rails or PoE-powered devices.

IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz with 20 A peak current, driven by integrated controller's PWM output.

Use Value: 46 mΩ RDS(ON) minimizes I²R loss at full load, while 11.5 nC Qg enables efficient high-frequency operation without excessive gate drive losses.

Use Scenario: Constant-current LED string switch in automotive instrument cluster or commercial display backlighting with 150 V bus tolerance.

IC Role / Device Role / Timing Role: Low-side PWM dimming switch controlling up to 24 A LED current, synchronized to display frame rate.

Use Value: 150 V VDSS accommodates transient surges in 48 V vehicle electrical systems; 1.4 °C/W RθJC sustains pulsed current without thermal derating.

Industrial Motor Control Hot-Swap Protection Circuit

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor driver for HVAC actuators or robotic joints.

IC Role / Device Role / Timing Role: Low-side switching element commutating inductive motor windings, subject to repetitive UIS events during direction reversal.

Use Value: Production-tested 68.4 mJ EAS ensures robustness against inductive kickback without external clamping diodes or RC snubbers.

Use Scenario: Inrush current limiter and fault disconnect switch in 48 V telecom power distribution boards.

IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller, conducting up to 24 A after soft-start and interrupting fault currents within microseconds.

Use Value: Fast tF = 12.7 ns fall time and low RDS(ON) reduce power dissipation during normal operation while enabling rapid shutdown during overcurrent events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT15H053SPSWQ Identical die and package; AEC-Q200 qualified with extended temperature screening and lifetime test data. Required for automotive-grade designs (e.g., body control modules, ADAS power supplies); not needed for industrial or consumer use. Select when automotive qualification documentation and PPAP support are mandatory.
DMTH15H053LPS-13 Same RDS(ON) (66 mΩ max) and VDSS (150 V), but in PowerDI3333 package (smaller, 3.3 × 3.3 mm); RθJC = 2.5 °C/W, lower ID = 15 A. Better suited for ultra-thin, low-power applications where board area is constrained but thermal budget is looser. Choose for space-limited designs accepting ~38% lower current rating and higher thermal resistance.

Compared with DMT15H053SPSW, the Q-variant adds automotive qualification overhead without electrical change, while the LPS variant trades current capacity and thermal performance for footprint reduction - selection depends strictly on qualification requirements and thermal/power density constraints.

Availability

DMT15H053SPSW is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and industrial motor control circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for DMT15H053SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing and design centers across Asia, the US, and Europe.

This MOSFET belongs to Diodes' Power Management portfolio, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and automotive-adjacent applications - emphasizing low RDS(ON), fast switching, and ruggedized packaging.

FAQ

What is the maximum continuous drain current at TC = +70°C?

The DMT15H053SPSW supports 19 A continuous drain current at case temperature of +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 1.4 °C/W RθJC and ambient heat dissipation constraints - actual usable current depends on PCB copper area and airflow.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 2–10 Ω) is recommended to dampen high-frequency oscillation caused by gate loop inductance interacting with Ciss and driver output impedance. The device's 0.6 Ω intrinsic gate resistance and 11.5 nC Qg make it susceptible to ringing without proper layout and external damping.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode has tRR = 47 ns and QRR = 87 nC at IF = 4.1 A, di/dt = 100 A/µs, making it viable for moderate-frequency synchronous rectification in buck converters. However, its VSD = 0.9 V (typ) at 20 A is higher than Schottky alternatives, so efficiency trade-offs apply above 300 kHz.

Can this part be used in a high-side configuration?

Yes - the DMT15H053SPSW supports high-side switching when paired with a gate driver capable of providing ≥10 V above the source potential. Its ±20 V VGS rating and 2–4 V VGS(TH) ensure reliable enhancement; however, layout must minimize source inductance to prevent false turn-off during fast dI/dt events.

DMT15H053SPSW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
66mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
814 pF @ 75 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta), 90W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI5060-8 (Type UX)

DMT15H053SPSW-13 FAQ

1.How can I place an order for DMT15H053SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT15H053SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT15H053SPSW-13 reliable?

The price and inventory of DMT15H053SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT15H053SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMT15H053SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT15H053SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT15H053SPSW-13?

DMT15H053SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT15H053SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT15H053SPSW-13?

For technical support, including DMT15H053SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT15H053SPSW-13 requirements.

6.How does Aetrix verify that DMT15H053SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMT15H053SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT15H053SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMT15H053SPSW-13?

All DMT15H053SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT15H053SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT15H053SPSW-13 part is unused and in its original packaging.

Return procedure for DMT15H053SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT15H053SPSW-13 Tags

  • DMT15H053SPSW-13
  • DMT15H053SPSW-13 PDF
  • DMT15H053SPSW-13 Datasheet
  • DMT15H053SPSW-13 Specifications
  • DMT15H053SPSW-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMT15H053SPSW-13
  • Buy DMT15H053SPSW-13
  • DMT15H053SPSW-13 Price
  • DMT15H053SPSW-13 Distributor
  • DMT15H053SPSW-13 Supplier
  • DMT15H053SPSW-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER